Nov 2008 Release, Rev i sio n E
Page 1
TAK CHEONG ®
SEMICONDUCTOR
400mW SOD-123 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
High Voltage & High Conductance
Fast Switching Diode
Absolute Ma ximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 400 mW
TSTG Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperature +150 °C
VRRM Repetitive Peak Reverse Voltage 250 V
IF(AV) Average Rectified Forward Current 200 mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Diode
General Purpose Diodes High Voltage Application Diodes
Flat Lead SOD-123 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE M ARKING C ODE:
Device Type Device Marking
BAV19W H1
BAV20W H2
BAV21W H3
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage BAV19W
BAV20W
BAV21W
IR=100µA
120
200
250
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Volts
Volts
Volts
IR Reverse Leakage Current BAV19W
BAV20W
BAV21W
VR=100V
VR=150V
VR=200V
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100
100
100
nA
nA
nA
VF Forward Voltage IF=100mA
IF=200mA
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1.0
1.25
Volts
Volts
TRR Reverse Recovery Time IF=IR=30mA
RL=100Ω
IRR=3mA
--- 50 nS
C Capacitance VR=0V, f=1MHZ --- 5.0 pF
BAV19W/BAV20W/BAV21W