MPSA05 ... MPSA06 MPSA05 ... MPSA06 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MPSA05 MPSA06 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 60 V 80 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V 80 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 4V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) IC 500 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1A Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 100 100 - - - - VCEsat - - 0.25 V VBE - - 1.2 V ICBO ICBO - - - - 100 nA 100 nA DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE hFE Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 100 mA, IB = 10 mA Base-Emitter voltage - Basis-Emitter-Spannung 2) IC = 100 mA, VCE = 1 V Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 60 V, (E open) VCB = 80 V, (E open) 1 2 MPSA05 MPSA06 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MPSA05 ... MPSA06 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. IEB0 - - 100 nA fT 100 MHz - - Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 2 V, f = 100 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 200 K/W 1) Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren MPSA55, MPSA56 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG