NCP45541 ecoSWITCHt Advanced Load Management Controlled Load Switch with Low RON The NCP45541 load switch provides a component and areareducing solution for efficient power domain switching with inrush current limit via soft-start. In addition to integrated control functionality with ultra low on-resistance, this device offers system monitoring via power good signaling. This cost effective solution is ideal for power management and hot-swap applications requiring low power consumption in a small footprint. Features * * * * * * * * * www.onsemi.com RON TYP VCC VIN 7.7 mW 3.3 V 1.8 V 8.0 mW 3.3 V 5.0 V 9.2 mW 3.3 V 12 V Advanced Controller with Charge Pump Integrated N-Channel MOSFET with Low RON Input Voltage Range 0.5 V to 13.5 V Soft-Start via Controlled Slew Rate Adjustable Slew Rate Control Power Good Signal Extremely Low Standby Current Load Bleed (Quick Discharge) This is a Pb-Free Device 1 MARKING DIAGRAM NCP45 541-x ALYWG G Portable Electronics and Systems Notebook and Tablet Computers Telecom, Networking, Medical, and Industrial Equipment Set-Top Boxes, Servers, and Gateways Hot-Swap Devices and Peripheral Ports VCC EN x = H for NCP45541-H = L for NCP45541-L A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package VIN PG 20 A DFN12, 3x3 CASE 506CD Typical Applications * * * * * IMAX (Note: Microdot may be in either location) Bandgap & Biases Charge Pump PIN CONFIGURATION Control Logic Delay and Slew Rate Control SR GND BLEED VOUT Figure 1. Block Diagram VIN 1 12 VOUT EN 2 11 VOUT VCC 3 10 VOUT GND 4 9 VOUT SR 5 8 NC PG 6 7 BLEED 13: VIN (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. (c) Semiconductor Components Industries, LLC, 2015 May, 2018 - Rev. 5 1 Publication Order Number: NCP45541/D NCP45541 Table 1. PIN DESCRIPTION Pin Name Function 1, 13 VIN Drain of MOSFET (0.5 V - 13.5 V), Pin 1 must be connected to Pin 13 2 EN NCP45541-H - Active-high digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45541-L - Active-low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC 3 VCC Supply voltage to controller (3.0 V - 5.5 V) 4 GND Controller ground 5 SR Slew rate adjustment; float if not used 6 PG Active-high, open-drain output that indicates when the gate of the MOSFET is fully driven, external pull up resistor 1 kW to an external voltage source required; tie to GND if not used. 7 BLEED 8 NC 9-12 VOUT Load bleed connection, must be tied to VOUT either directly or through a resistor 100 MW No connect, internally floating but pin may be tied to VOUT Source of MOSFET connected to load Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VCC -0.3 to 6 V Supply Voltage Range Input Voltage Range VIN -0.3 to 18 V Output Voltage Range VOUT -0.3 to 18 V EN Digital Input Range VEN -0.3 to (VCC + 0.3) V PG Output Voltage Range (Note 1) VPG -0.3 to 6 V Thermal Resistance, Junction-to-Ambient, Steady State (Note 2) RJA 30.9 C/W Thermal Resistance, Junction-to-Ambient, Steady State (Note 3) RJA 51.3 C/W Thermal Resistance, Junction-to-Case (VIN Paddle) RJC 3.5 C/W Continuous MOSFET Current @ TA = 25C (Note 2) IMAX 20 A Continuous MOSFET Current @ TA = 25C (Note 3) IMAX 15.5 A Total Power Dissipation @ TA = 25C (Note 2) Derate above TA = 25C PD 3.24 32.4 W mW/C Total Power Dissipation @ TA = 25C (Note 3) Derate above TA = 25C PD 1.95 19.5 W mW/C Storage Temperature Range TSTG -40 to 150 C Lead Temperature, Soldering (10 sec.) TSLD 260 C ESD Capability, Human Body Model (Notes 4 and 5) ESDHBM 3.0 kV ESD Capability, Charged Device Model (Note 4) ESDCDM 1.0 kV LU 100 mA Latch-up Current Immunity (Notes 4 and 5) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. PG is an open-drain output that requires an external pull up resistor 1 kW to an external voltage source. 2. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Tested by the following methods @ TA = 25C: ESD Human Body Model tested per JESD22-A114 ESD Charged Device Model per ESD STM5.3.1 Latch-up Current tested per JESD78 5. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET's Drain and Source. Typical MOSFET ESD performance for VIN and VOUT should be expected and these devices should be treated as ESD sensitive. www.onsemi.com 2 NCP45541 Table 3. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Supply Voltage VCC 3 5.5 V Input Voltage VIN 0.5 13.5 V 0 V Ground GND Ambient Temperature TA -40 85 C Junction Temperature TJ -40 125 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Conditions (Note 6) Typ Max Unit 7.7 8.9 mW VCC = 3.3 V; VIN = 5 V 8.0 9.3 VCC = 3.3 V; VIN = 12 V 9.2 12.1 Parameter Symbol Min MOSFET On-Resistance Leakage Current (Note 7) VCC = 3.3 V; VIN = 1.8 V RON VEN = 0 V; VIN = 13.5 V ILEAK 0.1 1.0 mA VEN = 0 V; VCC = 3 V ISTBY 0.65 2.0 mA 3.2 4.5 180 300 475 680 86 115 144 72 97 121 CONTROLLER Supply Standby Current (Note 8) VEN = 0 V; VCC = 5.5 V Supply Dynamic Current (Note 9) VEN = VCC = 3 V; VIN = 12 V IDYN VEN = VCC = 5.5 V; VIN = 1.8 V Bleed Resistance RBLEED VEN = 0 V; VCC = 3 V VEN = 0 V; VCC = 5.5 V EN Input High Voltage VCC = 3 V - 5.5 V VIH EN Input Low Voltage VCC = 3 V - 5.5 V VIL EN Input Leakage Current NCP45541-H; VEN = 0 V IIL NCP45541-L; VEN = VCC IIH 2.0 mA W V 0.8 V 90 500 nA 90 500 EN Pull Down Resistance NCP45541-H RPD 76 100 124 kW EN Pull Up Resistance NCP45541-L RPU 76 100 124 kW PG Output Low Voltage (Note 10) VCC = 3 V; ISINK = 5 mA VOL 0.2 V PG Output Leakage Current (Note 11) VCC = 3 V; VTERM = 3.3 V IOH 5.0 100 nA Slew Rate Control Constant (Note 12) VCC = 3 V KSR 33 40 mA 26 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. VEN shown only for NCP45541-H, (EN Active-High) unless otherwise specified. 7. Average current from VIN to VOUT with MOSFET turned off. 8. Average current from VCC to GND with MOSFET turned off. 9. Average current from VCC to GND after charge up time of MOSFET. 10. PG is an open-drain output that is pulled low when the MOSFET is disabled. 11. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor 1 kW to an external voltage source, VTERM. 12. See Applications Information section for details on how to adjust the slew rate. www.onsemi.com 3 NCP45541 Table 5. SWITCHING CHARACTERISTICS (TJ = 25C unless otherwise specified) (Notes 13 and 14) Parameter Conditions Output Slew Rate Symbol SR VCC = 3.3 V; VIN = 1.8 V Output Turn-on Delay Min 11.8 VCC = 5.0 V; VIN = 1.8 V 12.0 VCC = 3.3 V; VIN = 12 V 13.3 VCC = 5.0 V; VIN = 12 V 13.5 TON VCC = 3.3 V; VIN = 1.8 V 200 VCC = 5.0 V; VIN = 1.8 V 170 VCC = 3.3 V; VIN = 12 V 260 VCC = 5.0 V; VIN = 12 V Output Turn-off Delay 2.0 VCC = 5.0 V; VIN = 1.8 V 1.6 VCC = 3.3 V; VIN = 12 V 0.7 VCC = 5.0 V; VIN = 12 V 0.4 TPG,ON VCC = 3.3 V; VIN = 1.8 V Power Good Turn-off Time 1.02 VCC = 5.0 V; VIN = 1.8 V 0.95 VCC = 3.3 V; VIN = 12 V 1.52 VCC = 5.0 V; VIN = 12 V 1.23 TPG,OFF VCC = 3.3 V; VIN = 1.8 V 20 VCC = 5.0 V; VIN = 1.8 V 14 VCC = 3.3 V; VIN = 12 V 20 VCC = 5.0 V; VIN = 12 V 14 13. See below figure for Test Circuit and Timing Diagram. 14. Tested with the following conditions: VTERM = VCC; RPG = 100 kW; RL = 10 W; CL = 0.1 mF. OFF ON RPG EN VIN VCC NCP45541-H BLEED Dt CL TOFF 10% DV SR = TPG,ON VPG RL SR 50% 90% VOUT VOUT 50% TON VTERM PG GND VEN Max Unit kV/s ms 250 TOFF VCC = 3.3 V; VIN = 1.8 V Power Good Turn-on Time Typ DV 90% Dt TPG,OFF 50% 50% Figure 2. Switching Characteristics Test Circuit and Timing Diagrams www.onsemi.com 4 ms ms ns NCP45541 TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) 13 9.0 8.5 8.0 7.5 2.5 4.5 6.5 8.5 10.5 VIN = 1.8 V 8 7 0 15 30 45 60 75 90 105 120 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance vs. Input Voltage Figure 4. On-Resistance vs. Temperature 2.5 2.0 1.5 1.0 3.5 4.0 4.5 5.0 5.5 7 6 5 4 VCC = 5.5 V 3 2 1 VCC = 3 V 0 -45 -30 -15 0 15 30 45 60 75 90 105 120 VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. Supply Standby Current vs. Supply Voltage Figure 6. Supply Standby Current vs. Temperature 500 450 400 350 300 250 200 VCC = 5.5 V 150 100 9 6 -45 -30 -15 3.0 3.0 VIN = 5.0 V 10 12.5 3.5 0.5 11 ISTBY, SUPPLY STANDBY CURRENT (mA) ISTBY, SUPPLY STANDBY CURRENT (mA) 0.5 VIN = 12 V VCC = 3.3 V 12 RON, ON-RESISTANCE (mW) 9.5 7.0 IDYN, SUPPLY DYNAMIC CURRENT (mA) VCC = 3 V VCC = 5.5 V 10.0 IDYN, SUPPLY DYNAMIC CURRENT (mA) RON, ON-RESISTANCE (mW) 10.5 VCC = 3 V 0.5 2.5 4.5 6.5 8.5 10.5 12.5 500 450 VIN = 1.8 V 400 350 300 250 VIN = 12 V 200 150 100 3.0 3.5 4.0 4.5 5.0 5.5 VIN, INPUT VOLTAGE (V) VCC, SUPPLY VOLTAGE (V) Figure 7. Supply Dynamic Current vs. Input Voltage Figure 8. Supply Dynamic Current vs. Supply Voltage www.onsemi.com 5 NCP45541 TYPICAL CHARACTERISTICS 700 600 RBLEED, BLEED RESISTANCE (W) 115 VCC = 5.5 V, VIN = 1.8 V 500 400 300 VCC = 3.0 V, VIN = 12 V 200 100 -45 -15 15 45 75 RBLEED, BLEED RESISTANCE (W) 3.0 3.5 4.0 4.5 5.0 5.5 VCC, SUPPLY VOLTAGE (V) Figure 10. Bleed Resistance vs. Supply Voltage VCC = 3 V 125 115 VCC = 5.5 V 105 95 -15 15 45 75 105 120 115 110 105 100 95 90 85 -45 -15 15 45 75 105 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 11. Bleed Resistance vs. Temperature Figure 12. EN Pull Down/Up Resistance vs. Temperature 0.140 VOL, PG OUTPUT LOW VOLTAGE (V) VOL, PG OUTPUT LOW VOLTAGE (V) 100 TJ, JUNCTION TEMPERATURE (C) 135 ISINK = 5 mA 0.135 0.130 0.125 0.120 0.115 0.110 105 Figure 9. Supply Dynamic Current vs. Temperature 145 85 -45 110 95 105 IPD/PU, EN PULL DOWN/UP RESISTANCE (kW) IDYN, SUPPLY DYNAMIC CURRENT (mA) (TJ = 25C unless otherwise specified) 3.0 3.5 4.0 4.5 5.0 5.5 0.20 ISINK = 5 mA 0.18 VCC = 3 V 0.16 0.14 VCC = 5.5 V 0.12 0.10 0.08 -45 -15 15 45 75 105 VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 13. PG Output Low Voltage vs. Supply Voltage Figure 14. PG Output Low Voltage vs. Temperature www.onsemi.com 6 NCP45541 TYPICAL CHARACTERISTICS 35.5 36 35.0 VCC = 5.5 V 35 VCC = 3 V 33 33.5 31 30 32.5 29 0.5 2.5 4.5 6.5 8.5 10.5 32.0 -45 12.5 15 45 75 105 TJ, JUNCTION TEMPERATURE (C) Figure 15. Slew Rate Control Constant vs. Input Voltage Figure 16. Slew Rate Control Constant vs. Temperature 14.0 VCC = 5.5 V VCC = 3 V 12 11 10 0.5 2.5 4.5 6.5 8.5 10.5 13.5 VCC = 3.3 V, VIN = 12 V 13.0 12.5 12.0 VCC = 5 V, VIN = 1.8 V 11.5 11.0 10.5 -40 12.5 -20 0 20 40 60 80 100 120 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 17. Output Slew Rate vs. Input Voltage Figure 18. Output Slew Rate vs. Temperature 290 270 VCC = 3 V 250 230 VCC = 5.5 V 210 190 170 150 -15 VIN, INPUT VOLTAGE (V) 13 9 VCC = 3 V 33.0 SR, OUTPUT SLEW RATE (kV/s) SR, OUTPUT SLEW RATE (kV/s) 34.0 32 28 VCC = 5.5 V 34.5 34 14 TON, OUTPUT TURN-ON DELAY (ms) KSR, SLEW RATE CONTROL CONSTANT (mA) 37 TON, OUTPUT TURN-ON DELAY (ms) KSR, SLEW RATE CONTROL CONSTANT (mA) (TJ = 25C unless otherwise specified) 0.5 2.5 4.5 6.5 8.5 10.5 12.5 275 VCC = 3.3 V, VIN = 12 V 250 225 200 175 150 -40 VCC = 5 V, VIN = 1.8 V -20 0 20 40 60 80 100 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 19. Output Turn-on Delay vs. Input Voltage Figure 20. Output Turn-on Delay vs. Temperature www.onsemi.com 7 120 NCP45541 TYPICAL CHARACTERISTICS 3.0 TOFF, OUTPUT TURN-OFF DELAY (ms) TOFF, OUTPUT TURN-OFF DELAY (ms) (TJ = 25C unless otherwise specified) 2.5 2.0 VCC = 3 V 1.5 1.0 VCC = 5.5 V 0.5 0 0.5 2.5 4.5 6.5 8.5 10.5 12.5 VCC = 5 V, VIN = 1.8 V 1.50 1.25 1.00 VCC = 3.3 V, VIN = 12 V 0.75 0.50 -40 -20 0 20 40 60 80 100 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 22. Output Turn-off Delay vs. Temperature 120 1.8 TPG,ON, PG TURN-ON TIME (ms) TPG,ON, PG TURN-ON TIME (ms) 1.75 Figure 21. Output Turn-off Delay vs. Input Voltage 2.0 1.8 VCC = 3 V 1.6 1.4 VCC = 5.5 V 1.2 1.0 0.8 2.00 0.5 2.5 4.5 6.5 8.5 10.5 1.7 1.6 1.4 1.3 1.2 1.1 1.0 VCC = 5 V, VIN = 1.8 V 0.9 0.8 -40 12.5 VCC = 3.3 V, VIN = 12 V 1.5 -20 0 20 40 60 80 100 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 23. Power Good Turn-on Time vs. Input Voltage Figure 24. Power Good Turn-on Time vs. Temperature www.onsemi.com 8 120 NCP45541 TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) 26 TPG,OFF, PG TURN-OFF TIME (ns) 22 VIN = 13.5 V 20 18 VIN = 0.5 V 16 14 12 3.0 3.5 4.0 4.5 5.0 24 VCC = 3.3 V, VIN = 12 V 22 20 18 16 VCC = 5 V, VIN = 1.8 V 14 12 10 -40 -20 5.5 0 20 40 60 80 100 VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 25. Power Good Turn-off Time vs. Supply Voltage Figure 26. Power Good Turn-off Time vs. Temperature 100 10 ms ID, DRAIN CURRENT (A) TPG,OFF, PG TURN-OFF TIME (ns) 24 100 ms 10 1 0.1 0.01 TA = 85C TJ = 125C 0 V VGS 6 V Single Pulse RDS(on) Limit Thermal Limit Package Limit 0.1 1 ms 10 ms 100 ms 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 27. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 9 100 120 NCP45541 APPLICATIONS INFORMATION Enable Control continuous power that can be dissipated across RBLEED is 0.4 W. REXT can be used to decrease the amount of power dissipated across RBLEED. The NCP45541 has two part numbers, NCP45541-H and NCP45541-L, that only differ in the polarity of the enable control. The NCP45541-H device allows for enabling the MOSFET in an active-high configuration. When the VCC supply pin has an adequate voltage applied and the EN pin is at a logic high level, the MOSFET will be enabled. Similarly, when the EN pin is at a logic low level, the MOSFET will be disabled. An internal pull down resistor to ground on the EN pin ensures that the MOSFET will be disabled when not being driven. The NCP45541-L device allows for enabling the MOSFET in an active-low configuration. When the VCC supply pin has an adequate voltage applied and the EN pin is at a logic low level, the MOSFET will be enabled. Similarly, when the EN pin is at a logic high level, the MOSFET will be disabled. An internal pull up resistor to VCC on the EN pin ensures that the MOSFET will be disabled when not being driven. Power Good The NCP45541 devices have a power good output (PG) that can be used to indicate when the gate of the MOSFET is fully charged. The PG pin is an active-high, open-drain output that requires an external pull up resistor, RPG, greater than or equal to 1 kW to an external voltage source, VTERM, compatible with input levels of other devices connected to this pin (as shown in Figures 28 and 29). The power good output can be used as the enable signal for other active-high devices in the system (as shown in Figure 30). This allows for guaranteed by design power sequencing and reduces the number of enable signals needed from the system controller. If the power good feature is not used in the application, the PG pin should be tied to GND. Slew Rate Control The NCP45541 devices are equipped with controlled output slew rate which provides soft start functionality. This limits the inrush current caused by capacitor charging and enables these devices to be used in hot swap applications. The slew rate can be decreased with an external capacitor added between the SR pin and ground (as shown in Figures 28 and 29). With an external capacitor present, the slew rate can be determined by the following equation: Power Sequencing The NCP45541 devices will function with any power sequence, but the output turn-on delay performance may vary from what is specified. To achieve the specified performance, there are two recommended power sequences: 1. VCC VIN VEN 2. VIN VCC VEN Slew Rate + Load Bleed (Quick Discharge) The NCP45541 devices have an internal bleed resistor, RBLEED, which is used to bleed the charge off of the load to ground after the MOSFET has been disabled. In series with the bleed resistor is a bleed switch that is enabled whenever the MOSFET is disabled. The MOSFET and the bleed switch are never concurrently active. It is required that the BLEED pin be connected to VOUT either directly (as shown in Figure 29) or through an external resistor, REXT (as shown in Figure 28). REXT should not exceed 100 MW and can be used to increase the total bleed resistance and decrease the load bleed rate. Care must be taken to ensure that the power dissipated across RBLEED is kept at a safe level. The maximum K SR [Vs] C SR (eq. 1) where KSR is the specified slew rate control constant, found in Table 4, and CSR is the slew rate control capacitor added between the SR pin and ground. The slew rate of the device will always be the lower of the default slew rate and the adjusted slew rate. Therefore, if the CSR is not large enough to decrease the slew rate more than the specified default value, the slew rate of the device will be the default value. The SR pin can be left floating if the slew rate does not need to be decreased. www.onsemi.com 10 NCP45541 VTERM = 3.3 V Power Supply or Battery RPG 100 kW 3.0 V - 5.5 V 0.5 V - 13.5 V Delay and Slew Rate Control SR CSR VOUT Charge Pump BLEED Control Logic GND Bandgap & Biases VIN PG EN VCC Controller REXT Load Figure 28. Typical Application Diagram - Load Switch www.onsemi.com 11 NCP45541 VCC 3.0 V - 5.5 V EN VTERM PG GND VIN 0.5 V - 13.5 V RPG BACKPLANE CSR VOUT Delay and Slew Rate Control BLEED Charge Pump VIN PG Control Logic SR Bandgap & Biases GND EN VCC REMOVABLE CARD Load Figure 29. Typical Application Diagram - Hot Swap VTERM = 3.3 V EN PG EN PG RPG 10 kW Controller RPD 100 kW RPD 100 kW PG PG NCP45541-H NCP45541-H Figure 30. Simplified Application Diagram - Power Sequencing with PG Output ORDERING INFORMATION Device EN Polarity Package Shipping NCP45541IMNTWG-H Active-High NCP45541IMNTWG-L Active-Low DFN12 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 NCP45541 PACKAGE DIMENSIONS DFN12 3x3, 0.5P CASE 506CD ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L A B D L1 PIN ONE INDICATOR 0.10 C 2X 2X DETAIL A CCCC CCCC CCCC 0.10 C ALTERNATE CONSTRUCTIONS E MOLD CMPD A3 DETAIL B A1 A 0.05 C NOTE 4 SIDE VIEW A1 D2 1 M A3 SEATING PLANE 2.86 0.10 M 12X 0.48 E2 2.10 PACKAGE OUTLINE 12 7 e e/2 12X BOTTOM VIEW 11X 0.32 C A B L2 K MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 3.00 BSC 2.60 2.80 3.00 BSC 1.90 2.10 0.50 BSC 0.20 0.40 --- 0.15 0.10 REF 0.15 MIN RECOMMENDED SOLDERING FOOTPRINT* C A B L 12X 6 DETAIL B ALTERNATE CONSTRUCTION C 0.10 DETAIL A CC EE EE EXPOSED Cu TOP VIEW 0.05 C DIM A A1 A3 b D D2 E E2 e L L1 L2 K b 0.10 M C A-B B 0.05 M C 3.30 1 NOTE 3 0.45 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ecoSWITCH is a trademark of Semiconductor Components Industries, LLC (SCILLC). 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