© Semiconductor Components Industries, LLC, 2015
May, 2018 − Rev. 5
1Publication Order Number:
NCP45541/D
NCP45541
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low RON
The NCP45541 load switch provides a component and area-
reducing solution for efficient power domain switching with inrush
current limit via soft−start. In addition to integrated control
functionality with ultra low on−resistance, this device offers system
monitoring via power good signaling. This cost effective solution is
ideal for power management and hot-swap applications requiring low
power consumption in a small footprint.
Features
•Advanced Controller with Charge Pump
•Integrated N-Channel MOSFET with Low RON
•Input Voltage Range 0.5 V to 13.5 V
•Soft-Start via Controlled Slew Rate
•Adjustable Slew Rate Control
•Power Good Signal
•Extremely Low Standby Current
•Load Bleed (Quick Discharge)
•This is a Pb−Free Device
Typical Applications
•Portable Electronics and Systems
•Notebook and Tablet Computers
•Telecom, Networking, Medical, and Industrial Equipment
•Set−Top Boxes, Servers, and Gateways
•Hot−Swap Devices and Peripheral Ports
Figure 1. Block Diagram
EN
Bandgap
&
Biases
Charge
Pump
Delay and
Slew Rate
Control
GND BLEED
SR
Control
Logic
PG
VOUT
VIN
VCC
MARKING DIAGRAM
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RON TYP VCC IMAX
7.7 mW3.3 V
20 A
3.3 V
8.0 mW
VIN
1.8 V
5.0 V
PIN CONFIGURATION
(Top View)
See detailed ordering and shipping information on page 12 of
this data sheet.
ORDERING INFORMATION
x = H for NCP45541−H
= L for NCP45541−L
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
9.2 mW3.3 V 12 V
1
EN
GND 4
2
3
12
11
10
9
13: VIN
VOUT
VOUT
VCC
VIN
NCP45
541−x
ALYWG
G
SR NC
58
PG BLEED
67
VOUT
VOUT
DFN12, 3x3
CASE 506CD
1
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2
Table 1. PIN DESCRIPTION
Pin Name Function
1, 13 VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 13
2 EN NCP45541−H − Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to
GND
NCP45541−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC
3 VCC Supply voltage to controller (3.0 V − 5.5 V)
4 GND Controller ground
5 SR Slew rate adjustment; float if not used
6 PG Active−high, open−drain output that indicates when the gate of the MOSFET is fully driven, external pull up
resistor ≥ 1 kW to an external voltage source required; tie to GND if not used.
7 BLEED Load bleed connection, must be tied to VOUT either directly or through a resistor
≤ 100 MW
8 NC No connect, internally floating but pin may be tied to VOUT
9−12 VOUT Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage Range VCC −0.3 to 6 V
Input Voltage Range VIN −0.3 to 18 V
Output Voltage Range VOUT −0.3 to 18 V
EN Digital Input Range VEN −0.3 to (VCC + 0.3) V
PG Output Voltage Range (Note 1) VPG −0.3 to 6 V
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2) RθJA 30.9 °C/W
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3) RθJA 51.3 °C/W
Thermal Resistance, Junction−to−Case (VIN Paddle) RθJC 3.5 °C/W
Continuous MOSFET Current @ TA = 25°C (Note 2) IMAX 20 A
Continuous MOSFET Current @ TA = 25°C (Note 3) IMAX 15.5 A
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above TA = 25°C
PD3.24
32.4
W
mW/°C
Total Power Dissipation @ TA = 25°C (Note 3)
Derate above TA = 25°C
PD1.95
19.5
W
mW/°C
Storage Temperature Range TSTG −40 to 150 °C
Lead Temperature, Soldering (10 sec.) TSLD 260 °C
ESD Capability, Human Body Model (Notes 4 and 5) ESDHBM 3.0 kV
ESD Capability, Charged Device Model (Note 4) ESDCDM 1.0 kV
Latch−up Current Immunity (Notes 4 and 5) LU 100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Charged Device Model per ESD STM5.3.1
Latch−up Current tested per JESD78
5. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.
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3
Table 3. RECOMMENDED OPERATING RANGES
Rating Symbol Min Max Unit
Supply Voltage VCC 3 5.5 V
Input Voltage VIN 0.5 13.5 V
Ground GND 0 V
Ambient Temperature TA−40 85 °C
Junction Temperature TJ−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Conditions (Note 6) Symbol Min Typ Max Unit
MOSFET
On−Resistance VCC = 3.3 V; VIN = 1.8 V RON 7.7 8.9 mW
VCC = 3.3 V; VIN = 5 V 8.0 9.3
VCC = 3.3 V; VIN = 12 V 9.2 12.1
Leakage Current (Note 7) VEN = 0 V; VIN = 13.5 V ILEAK 0.1 1.0 mA
CONTROLLER
Supply Standby Current (Note 8) VEN = 0 V; VCC = 3 V ISTBY 0.65 2.0 mA
VEN = 0 V; VCC = 5.5 V 3.2 4.5
Supply Dynamic Current (Note 9) VEN = VCC = 3 V; VIN = 12 V IDYN 180 300 mA
VEN = VCC = 5.5 V; VIN = 1.8 V 475 680
Bleed Resistance VEN = 0 V; VCC = 3 V RBLEED 86 115 144 W
VEN = 0 V; VCC = 5.5 V 72 97 121
EN Input High Voltage VCC = 3 V − 5.5 V VIH 2.0 V
EN Input Low Voltage VCC = 3 V − 5.5 V VIL 0.8 V
EN Input Leakage Current NCP45541−H; VEN = 0 V IIL 90 500 nA
NCP45541−L; VEN = VCC IIH 90 500
EN Pull Down Resistance NCP45541−H RPD 76 100 124 kW
EN Pull Up Resistance NCP45541−L RPU 76 100 124 kW
PG Output Low Voltage (Note 10) VCC = 3 V; ISINK = 5 mA VOL 0.2 V
PG Output Leakage Current (Note 11) VCC = 3 V; VTERM = 3.3 V IOH 5.0 100 nA
Slew Rate Control Constant (Note 12) VCC = 3 V KSR 26 33 40 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. VEN shown only for NCP45541−H, (EN Active−High) unless otherwise specified.
7. Average current from VIN to VOUT with MOSFET turned off.
8. Average current from VCC to GND with MOSFET turned off.
9. Average current from VCC to GND after charge up time of MOSFET.
10.PG is an open-drain output that is pulled low when the MOSFET is disabled.
11. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor ≥ 1 kW to
an external voltage source, VTERM.
12.See Applications Information section for details on how to adjust the slew rate.
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Table 5. SWITCHING CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Notes 13 and 14)
Parameter Conditions Symbol Min Typ Max Unit
Output Slew Rate VCC = 3.3 V; VIN = 1.8 V SR 11.8 kV/s
VCC = 5.0 V; VIN = 1.8 V 12.0
VCC = 3.3 V; VIN = 12 V 13.3
VCC = 5.0 V; VIN = 12 V 13.5
Output Turn−on Delay VCC = 3.3 V; VIN = 1.8 V TON 200 ms
VCC = 5.0 V; VIN = 1.8 V 170
VCC = 3.3 V; VIN = 12 V 260
VCC = 5.0 V; VIN = 12 V 250
Output Turn−off Delay VCC = 3.3 V; VIN = 1.8 V TOFF 2.0 ms
VCC = 5.0 V; VIN = 1.8 V 1.6
VCC = 3.3 V; VIN = 12 V 0.7
VCC = 5.0 V; VIN = 12 V 0.4
Power Good Turn−on Time VCC = 3.3 V; VIN = 1.8 V TPG,ON 1.02 ms
VCC = 5.0 V; VIN = 1.8 V 0.95
VCC = 3.3 V; VIN = 12 V 1.52
VCC = 5.0 V; VIN = 12 V 1.23
Power Good Turn−off Time VCC = 3.3 V; VIN = 1.8 V TPG,OFF 20 ns
VCC = 5.0 V; VIN = 1.8 V 14
VCC = 3.3 V; VIN = 12 V 20
VCC = 5.0 V; VIN = 12 V 14
13.See below figure for Test Circuit and Timing Diagram.
14.Tested with the following conditions: VTERM = VCC; RPG = 100 kW; RL = 10 W; CL = 0.1 mF.
Figure 2. Switching Characteristics Test Circuit and Timing Diagrams
EN
NCP45541−H
PG
GND
BLEED
OFF ON
SR
10%
90%
DV
Dt
SR = DV
Dt
50% 50%
90%
50% 50%
VCC
VIN VOUT
CL
RL
RPG
VTERM
VPG
VOUT
VEN
TON TOFF
TPG,OFF
TPG,ON
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 3. On−Resistance vs. Input Voltage Figure 4. On−Resistance vs. Temperature
VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Supply Standby Current vs. Supply
Voltage
Figure 6. Supply Standby Current vs.
Temperature
VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
5.55.04.54.03.53.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
105906030150−30−45
0
1
2
3
4
5
6
7
Figure 7. Supply Dynamic Current vs. Input
Voltage
Figure 8. Supply Dynamic Current vs. Supply
Voltage
VIN, INPUT VOLTAGE (V) VCC, SUPPLY VOLTAGE (V)
RON, ON−RESISTANCE (mW)
RON, ON−RESISTANCE (mW)
ISTBY
, SUPPLY STANDBY CURRENT (mA)
−15 45 75 120
VCC = 3 V
VCC = 5.5 V
ISTBY
, SUPPLY STANDBY CURRENT (mA)
IDYN, SUPPLY DYNAMIC CURRENT (mA)
IDYN, SUPPLY DYNAMIC CURRENT (mA)
12.510.58.56.54.52.50.5
7.0
7.5
8.0
8.5
10.0
10.5
105754515−15−45
6
7
8
9
13
10
12
9.5
VIN = 1.8 V
VCC = 3.3 V
VIN = 5.0 V
VIN = 12 V
1200−30 30 60 90
12.510.58.56.54.52.50.5
100
150
250
300
350
450
500
5.55.04.54.03.53.0
100
200
300
350
400
500
VCC = 3 V
VCC = 5.5 V
400
VIN = 12 V
250
450
VIN = 1.8 V
200
150
VCC = 3 V
VCC = 5.5 V
9.0
11
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 9. Supply Dynamic Current vs.
Temperature
Figure 10. Bleed Resistance vs. Supply
Voltage
TJ, JUNCTION TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (V)
5.55.04.54.03.53.0
95
100
105
110
115
Figure 11. Bleed Resistance vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
105754515−15−45
85
95
105
115
125
135
145
Figure 12. EN Pull Down/Up Resistance vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
105754515−15−45
85
90
95
100
105
110
115
120
IDYN, SUPPLY DYNAMIC CURRENT (mA)
RBLEED, BLEED RESISTANCE (W)
RBLEED, BLEED RESISTANCE (W)
IPD/PU, EN PULL DOWN/UP RESISTANCE (kW)
VCC = 3 V
VCC = 5.5 V
105754515−15−45
100
400
500
700
300
600
VCC = 3.0 V, VIN = 12 V
VCC = 5.5 V, VIN = 1.8 V
200
Figure 13. PG Output Low Voltage vs. Supply
Voltage
Figure 14. PG Output Low Voltage vs.
Temperature
VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
5.55.04.54.03.53.0
0.110
0.115
0.120
0.125
0.130
0.135
0.140
105754515−15−45
0.08
0.10
0.12
0.14
0.16
0.18
0.20
VOL, PG OUTPUT LOW VOLTAGE (V)
VOL, PG OUTPUT LOW VOLTAGE (V)
ISINK = 5 mA
VCC = 3 V
VCC = 5.5 V
ISINK = 5 mA
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 15. Slew Rate Control Constant vs.
Input Voltage
Figure 16. Slew Rate Control Constant vs.
Temperature
VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Output Slew Rate vs. Input Voltage
VIN, INPUT VOLTAGE (V)
KSR, SLEW RATE CONTROL CONSTANT (mA)
SR, OUTPUT SLEW RATE (kV/s)
KSR, SLEW RATE CONTROL CONSTANT (mA)
12.510.58.56.54.52.50.5
28
29
31
32
33
34
36
37
30
35
VCC = 3 V
VCC = 5.5 V
105754515−15−45
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
VCC = 3 V
VCC = 5.5 V
12.510.58.56.54.52.50.5
9
10
11
12
13
14
VCC = 3 V
VCC = 5.5 V
Figure 18. Output Slew Rate vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−40
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
SR, OUTPUT SLEW RATE (kV/s)
120
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
Figure 19. Output Turn−on Delay vs. Input
Voltage
VIN, INPUT VOLTAGE (V)
12.510.58.56.54.52.50.5
150
170
190
210
230
270
290
Figure 20. Output Turn−on Delay vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−40
150
175
200
225
250
275
TON, OUTPUT TURN−ON DELAY (ms)
TON, OUTPUT TURN−ON DELAY (ms)
250
VCC = 3 V
VCC = 5.5 V
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
120
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 21. Output Turn−off Delay vs. Input
Voltage
VIN, INPUT VOLTAGE (V)
12.510.58.56.54.52.50.5
0
0.5
1.5
2.0
2.5
3.0
Figure 22. Output Turn−off Delay vs.
Temperature
Figure 23. Power Good Turn−on Time vs. Input
Voltage
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
100806040200−20−40
0.50
0.75
1.00
1.50
1.75
2.00
12.510.58.56.54.52.50.5
0.8
1.2
2.0
TOFF
, OUTPUT TURN−OFF DELAY (ms)
TOFF
, OUTPUT TURN−OFF DELAY (ms)
TPG,ON, PG TURN−ON TIME (ms)
1.0
VCC = 3 V
VCC = 5.5 V
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
120
VCC = 3 V
VCC = 5.5 V
1.0
1.4
1.6
1.25
1.8
Figure 24. Power Good Turn−on Time vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−40
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.8
TPG,ON, PG TURN−ON TIME (ms)
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
120
1.5
1.6
1.7
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 25. Power Good Turn−off Time vs.
Supply Voltage
VCC, SUPPLY VOLTAGE (V)
5.55.04.54.03.53.0
12
14
16
18
20
22
24
Figure 26. Power Good Turn−off Time vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−40
10
12
14
16
18
22
24
26
TPG,OFF
, PG TURN−OFF TIME (ns)
TPG,OFF
, PG TURN−OFF TIME (ns)
VIN = 0.5 V
VIN = 13.5 V
120
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
20
Figure 27. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
100 ms
1 ms
10 ms
1 10 1000.01
100
10
1
0.1
0.1
100 ms
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
TA = 85°C
TJ = 125°C
0 V ≤ VGS ≤ 6 V
Single Pulse
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APPLICATIONS INFORMATION
Enable Control
The NCP45541 has two part numbers, NCP45541−H and
NCP45541−L, that only differ in the polarity of the enable
control.
The NCP45541−H device allows for enabling the
MOSFET in an active−high configuration. When the VCC
supply pin has an adequate voltage applied and the EN pin
is at a logic high level, the MOSFET will be enabled.
Similarly, when the EN pin is at a logic low level, the
MOSFET will be disabled. An internal pull down resistor to
ground on the EN pin ensures that the MOSFET will be
disabled when not being driven.
The NCP45541−L device allows for enabling the
MOSFET in an active−low configuration. When the VCC
supply pin has an adequate voltage applied and the EN pin
is at a logic low level, the MOSFET will be enabled.
Similarly, when the EN pin is at a logic high level, the
MOSFET will be disabled. An internal pull up resistor to
VCC on the EN pin ensures that the MOSFET will be
disabled when not being driven.
Power Sequencing
The NCP45541 devices will function with any power
sequence, but the output turn−on delay performance may
vary from what is specified. To achieve the specified
performance, there are two recommended power sequences:
1. VCC → VIN → VEN
2. VIN → VCC → VEN
Load Bleed (Quick Discharge)
The NCP45541 devices have an internal bleed resistor,
RBLEED, which is used to bleed the charge off of the load to
ground after the MOSFET has been disabled. In series with
the bleed resistor is a bleed switch that is enabled whenever
the MOSFET is disabled. The MOSFET and the bleed
switch are never concurrently active.
It is required that the BLEED pin be connected to VOUT
either directly (as shown in Figure 29) or through an external
resistor, REXT (as shown in Figure 28). REXT should not
exceed 100 MW and can be used to increase the total bleed
resistance and decrease the load bleed rate.
Care must be taken to ensure that the power dissipated
across RBLEED is kept at a safe level. The maximum
continuous power that can be dissipated across RBLEED is
0.4 W. REXT can be used to decrease the amount of power
dissipated across RBLEED.
Power Good
The NCP45541 devices have a power good output (PG)
that can be used to indicate when the gate of the MOSFET
is fully charged. The PG pin is an active−high, open−drain
output that requires an external pull up resistor, RPG, greater
than or equal to 1 kW to an external voltage source, VTERM,
compatible with input levels of other devices connected to
this pin (as shown in Figures 28 and 29).
The power good output can be used as the enable signal for
other active−high devices in the system (as shown in
Figure 30). This allows for guaranteed by design power
sequencing and reduces the number of enable signals needed
from the system controller. If the power good feature is not
used in the application, the PG pin should be tied to GND.
Slew Rate Control
The NCP45541 devices are equipped with controlled
output slew rate which provides soft start functionality. This
limits the inrush current caused by capacitor charging and
enables these devices to be used in hot swap applications.
The slew rate can be decreased with an external capacitor
added between the SR pin and ground (as shown in
Figures 28 and 29). With an external capacitor present, the
slew rate can be determined by the following equation:
Slew Rate +KSR
CSR
[Vńs] (eq. 1)
where KSR is the specified slew rate control constant, found
in Table 4, and CSR is the slew rate control capacitor added
between the SR pin and ground. The slew rate of the device
will always be the lower of the default slew rate and the
adjusted slew rate. Therefore, if the CSR is not large enough
to decrease the slew rate more than the specified default
value, the slew rate of the device will be the default value.
The SR pin can be left floating if the slew rate does not need
to be decreased.
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VCC
EN
Bandgap
&
Biases
Charge
Pump
Delay and
Slew Rate
Control
GND
BLEED
VOUT VIN
Control
Logic
PG
Load
VTERM
RPG
VCC
3.0 V − 5.5 V EN PG GND VIN
0.5 V − 13.5 V
BACKPLANE
REMOVABLE
CARD
SR
CSR
Figure 29. Typical Application Diagram − Hot Swap
W
PG
VTERM = 3.3 V
RPG
W
PG
NCP45541−H
EN
RPD
W
Controller
PG
PG
NCP45541−H
EN
RPD
Figure 30. Simplified Application Diagram − Power Sequencing with PG Output
10 k
100 k100 k
ORDERING INFORMATION
Device EN Polarity Package Shipping†
NCP45541IMNTWG−HActive−High DFN12
(Pb−Free) 3000 / Tape & Reel
NCP45541IMNTWG−LActive−Low
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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PACKAGE DIMENSIONS
DFN12 3x3, 0.5P
CASE 506CD
ISSUE A
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
12X
0.45
3.30
0.50
PITCH
2.10
0.48
2.86
1
DIMENSIONS: MILLIMETERS
0.32
11X
RECOMMENDED
PACKAGE
OUTLINE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
A
D
E
B
C0.10
PIN ONE
2X
INDICATOR
2X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
L
D2
E2
C
C0.10
C0.05
C0.05
NOTE 4 A1 SEATING
PLANE
e
12X
NOTE 3
b12X
DIM MIN MAX
MILLIMETERS
A0.80 1.00
A1 0.00 0.05
b0.20 0.30
D3.00 BSC
D2 2.60 2.80
E3.00 BSC
E2 1.90 2.10
e0.50 BSC
L0.20 0.40
L1 −−− 0.15
16
12 7
A3 0.20 REF
A3
L2
A1 A3
ÇÇ
ÉÉ
ÉÉ
DETAIL B
MOLD CMPD
EXPOSED Cu
ALTERNATE
CONSTRUCTION
L1
DETAIL A
L
ALTERNATE
CONSTRUCTIONS
L
DETAIL B
DETAIL A
e/2
A-B
M
0.10 BC
M
0.05 C
A
M
0.10 BC
A
M
0.10 BC
L2 0.10 REF
K
K0.15 MIN
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