DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 15.0 A IDM Tc = 25C, pulse width limited by TJM 90 A IAR Tc = 25C 9.0 A EAR Tc = 25C 7.5 mJ IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 5 V/ns dv/dt >200 V/ns 200 W 80 W 3.5 W RthJC 0.74 C/W RthJHS 1.15 C/W IS = 0 VDSS = 200 V ID25 = 15 A RDS(on) 0.2 PDC = 200 W DRAIN PDC PDHS Tc = 25C Derate 4.4W/C above 25C PDAMB Tc = 25C Symbol Test Conditions Characteristic Values TJ = 25C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 a IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% gfs VDS = 40 V, ID = 0.5ID25, pulse test typ. 200 2 3.0 3 1.6mm (0.063 in) from case for 10 s SG2 cycling capability IXYS advanced low Qg process 100 nA 25 250 A A 0.2 S Advantages +175 SD2 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power V +175 SD1 Features 4 4.5 -55 Tstg SG1 * * - - * * * 175 TJM Weight V -55 TJ TL max. GATE Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials C * Optimized for RF and high speed C * Easy to mount--no insulators needed * High power density C 300 C 2 g switching at frequencies to >100MHz DE150-201N09A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 5 RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 , Ig = 3 ma Qgd Source-Drain Diode 650 pF 130 pF 15 pF 16 pF 4 ns 4 ns 4 ns 4 ns 28 nC 3.5 nC 14.5 nC Characteristic Values (TJ = 25C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% typ. max. 9.0 A 90 A 1.4 V 450 Trr ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE150-201N09A RF Power MOSFET Fig. 1 Fig. 2 Typical Transfer Characteristics V DS = 40V PW = 20S 50 Typical Output Characteristics 20 ID, Drain Currnet (A) ID, Drain Current (A) 40 35 30 25 20 15 10 7V 8V to 10V 45 15 6.5V 6V 10 5.5V 5 5V 5 4.5V 0 0 3.5 4.5 5.5 6.5 7.5 8.5 0 9.5 10 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 100V ID = 7.5A Gate-to-Source Voltage (V) 14 ID, Drain Currnet (A) 12 10 8 6 4 2 0 0 10 20 Capacitance (pF) 10000 Ciss Coss 100 Crss 10 1 0 20 40 60 80 100 VDS Voltage (V) 50 45 40 35 30 25 20 15 10 5 0 Top 120 50 60 Bottom 10V 9V 8V 7V 6.5V 6V 5.5V 5V 4.5V 10 20 30 40 V DS, Drain-to-Source Voltage (V) VDS vs. Capacitance 1000 40 Extended Typical Output Characteristics 0 30 Gate Charge (nC) Fig. 5 30 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig. 3 20 140 160 50 60 DE150-201N09A RF Power MOSFET Fig. 6 Package drawing Source Source Gate Drain Source Source DE150-201N09A RF Power MOSFET 201N09A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de150-201n09a.html Net List: *SYM=POWMOSN .SUBCKT 201N09 10 20 30 * TERMINALS: D G S * 200 Volt 15 Amp .2 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 .2 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=2.7) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0241 Rev 6 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com