DE150-201N09A
RF Power MOSFET
V
DSS = 200 V
ID25 = 15 A
RDS(on) ≤ 0.2 Ω
ΩΩ
Ω
PDC = 200 W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 200 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 200 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 15.0 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
90 A
I
AR
T
c
= 25°C 9.0 A
E
AR
T
c
= 25°C 7.5 mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω 5 V/ns
I
S
= 0 >200 V/ns
P
DC
200 W
P
DHS
T
c
= 25°C
Derate 4.4W/°C above 25°C 80 W
P
DAMB
T
c
= 25°C 3.5 W
R
thJC
0.74 C/W
R
thJHS
1.15 C/W
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µa 2 3 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
25
250 µA
µA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.2 Ω
g
fs
V
DS
= 40 V, I
D
= 0.5I
D25
, pulse test 3.0 4.5 S
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm (0.063 in) from case for 10 s 300 °C
Weight 2 g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
DRAIN
SG1 SG2
GATE
SD1 SD2
DE150-201N09A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
min. typ. max.
R
G
5 Ω
C
iss
650 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 130 pF
C
rss
15 pF
C
stray
Back Metal to any Pin 16 pF
T
d(on)
4 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
4 ns
T
d(off)
4 ns
T
off
4 ns
Q
g(on)
28 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
, Ig = 3 ma 3.5 nC
Q
gd
14.5 nC
(T
J
= 25°C unless otherwise specified)
Source-Drain Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 9.0 A
I
SM
Repetitive; pulse width limited by T
JM
90 A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 1.4 V
T
rr
450 ns
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
DE150-201N09A
RF Power MOSFET
V
DS
vs. Capacitance
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160
V
DS
Voltage (V)
Capacitance (pF)
Typical Trans fer Characteristics
V
DS
= 40V PW = 20µS
0
5
10
15
20
25
30
35
40
45
50
3.5 4.5 5.5 6.5 7.5 8.5 9.5
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain Current (A)
Typical Output Characteristics
0
5
10
15
20
0 10 20 30 40 50 60
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Extended Typical Output Characteristics
0
5
10
15
20
25
30
35
40
45
50
0 10 20 30 40 50 60
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 100V I
D
= 7.5A
0
2
4
6
8
10
12
14
0 10 20 30
Gate Charge (nC)
Gate-to-Source Voltage (V)
Fig. 1 Fig. 2
Fig. 3 Fig. 4
Fig. 5
Top 10V
9V
8V
7V
6.5V
6V
5.5V
5V
Bottom 4.5V
C
iss
C
oss
C
rss
4.5V
5V
5.5V
6V
6.5V
7V
8V
to
10V
DE150-201N09A
RF Power MOSFET
Fig. 6 Package drawing
Source
Source
Gate
Source
Source
Drain
DE150-201N09A
RF Power MOSFET
201N09A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the
device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer capaci-
tance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron
and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de150-201n09a.html
Net List:
*SYM=POWMOSN
.SUBCKT 201N09 10 20 30
* TERMINALS: D G S
* 200 Volt 15 Amp .2 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .6N
RD 4 1 .2
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=2.7)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0241 Rev 6
© 2009 IXYS RF
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
