LP3881ES-1.8/NOPB - Texas Instruments

LP3881

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SNVS224F –MARCH 2003–REVISED APRIL 2013

LP3881 0.8A Fast-Response Ultra Low Dropout Linear Regulators

Check for Samples: LP3881

1FEATURES DESCRIPTION

The LP3881 is a high current, fast response regulator

2• Ultra Low Dropout Voltage (75 mV @ 0.8A Typ) which can maintain output voltage regulation with

• Low Ground Pin Current minimum input to output voltage drop. Fabricated on

• Load Regulation of 0.04%/A a CMOS process, the device operates from two input

voltages: Vbias provides voltage to drive the gate of

• 60 nA Typical Quiescent Current in Shutdown the N-MOS power transistor, while Vin is the input

• 1.5% Output Accuracy (25°C) voltage which supplies power to the load. The use of

• TO-220, TO-263 and SOIC-8 Packages an external bias rail allows the part to operate from

ultra low Vin voltages. Unlike bipolar regulators, the

• Over Temperature/Over Current Protection CMOS architecture consumes extremely low

•−40°C to +125°C Junction Temperature Range quiescent current at any output load current. The use

of an N-MOS power transistor results in wide

APPLICATIONS bandwidth, yet minimum external capacitance is

required to maintain loop stability.

• DSP Power Supplies

• Server Core and I/O Supplies The fast transient response of these devices makes

them suitable for use in powering DSP,

• PC Add-in-Cards Microcontroller Core voltages and Switch Mode

• Local Regulators in Set-Top Boxes Power Supply post regulators. The parts are available

• Microcontroller Power Supplies in TO-220, TO-263 and SOIC-8 packages.

• High Efficiency Power Supplies Dropout Voltage: 75 mV (typ) @ 0.8A load current.

• SMPS Post-Regulators Ground Pin Current: 3 mA (typ) at full load.

Shutdown Current: 60 nA (typ) when S/D pin is low.

Precision Output Voltage: 1.5% room temperature

accuracy.

TYPICAL APPLICATION CIRCUIT

At least 4.7 µF of input and output capacitance is required for stability.

1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

GND

VIN

S/D

VBIAS

GND

VOUT N/C

GND

VOUT

LP3881

SNVS224F –MARCH 2003–REVISED APRIL 2013

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Connection Diagrams

Figure 1. TO-220, Top View Figure 2. TO-263, Top View

Figure 3. SOIC-8, Top View

Block Diagram

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

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ABSOLUTE MAXIMUM RATINGS (1)

Storage Temperature Range −65°C to +150°C

Lead Temp. (Soldering, 5 seconds) 260°C

Human Body Model(2) 2 kV

ESD Rating Machine Model(3) 200V

Power Dissipation(4) Internally Limited

VIN Supply Voltage (Survival) −0.3V to +6V

VBIAS Supply Voltage (Survival) −0.3V to +7V

Shutdown Input Voltage (Survival) −0.3V to +7V

IOUT (Survival) Internally Limited

Output Voltage (Survival) −0.3V to +6V

Junction Temperature −40°C to +150°C

(1) Absolute maximum ratings indicate limits beyond which damage to the component may occur. Operating ratings indicate conditions for

which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications, see Electrical

Characteristics. Specifications do not apply when operating the device outside of its rated operating conditions.

(2) The human body model is a 100 pF capacitor discharged through a 1.5k resistor into each pin.

(3) The machine model is a 220 pF capacitor discharged directly into each pin. The machine model ESD rating of pin 5 is 100V.

(4) At elevated temperatures, device power dissipation must be derated based on package thermal resistance and heatsink thermal values.

θJ-A for TO-220 devices is 65°C/W if no heatsink is used. If the TO-220 device is attached to a heatsink, a θJ-S value of 4°C/W can be

assumed. θJ-A for TO-263 devices is approximately 40°C/W if soldered down to a copper plane which is at least 1.5 square inches in

area. θJ-A value for typical SOIC-8 PC board mounting is 166°C/W. If power dissipation causes the junction temperature to exceed

specified limits, the device will go into thermal shutdown.

OPERATING RATINGS

VIN Supply Voltage (VOUT + VDO) to 5.5V

Shutdown Input Voltage 0 to +6V

IOUT 0.8A

Operating Junction Temperature Range −40°C to +125°C

VBIAS Supply Voltage 4.5V to 6V

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ELECTRICAL CHARACTERISTICS

Limits in standard typeface are for TJ= 25°C, and limits in boldface type apply over the full operating temperature range.

Unless otherwise specified: VIN = VO(NOM) + 1V, VBIAS = 4.5V, IL= 10 mA, CIN = COUT = 4.7 µF, VS/D = VBIAS.

Symbol Parameter Conditions Min(1) Typical(2) Max(1) Units

VOOutput Voltage Tolerance 10 mA < IL< 0.8A 1.198 1.234

VO(NOM) + 1V ≤VIN ≤5.5V 1.216

4.5V ≤VBIAS ≤6V 1.186 1.246

1.478 1.522

1.5 V

1.455 1.545

1.773 1.827

1.8

1.746 1.854

ΔVO/ΔVIN Output Voltage Line Regulation(3) VO(NOM) + 1V ≤VIN ≤5.5V 0.01 %/V

ΔVO/ΔILOutput Voltage Load Regulation(4) 10 mA < IL< 0.8A 0.04 %/A

0.06

VDO Dropout Voltage(5) IL= 0.8A 120

(TO220 and TO263 only) 160 mV

IL= 0.8A 140

(SOIC only) 190

IQ(VIN) Quiescent Current Drawn from VIN 10 mA < IL< 0.8A 7

3 mA

Supply 8

VS/D ≤0.3V 1

0.03 µA

IQ(VBIAS) Quiescent Current Drawn from 10 mA < IL< 0.8A 2

1 mA

VBIAS Supply 3

VS/D ≤0.3V 1

0.03 µA

ISC Short-Circuit Current VOUT = 0V 2.5 A

Shutdown Input

VSDT Output Turn-off Threshold Output = ON 1.3 0.7 V

Output = OFF 0.7 0.3

Td (OFF) Turn-OFF Delay RLOAD X COUT << Td (OFF) 20 µs

Td (ON) Turn-ON Delay RLOAD X COUT << Td (ON) 15

IS/D S/D Input Current VS/D =1.3V 1 µA

VS/D ≤0.3V −1

AC Parameters

PSRR (VIN) Ripple Rejection for VIN Input VIN = VOUT +1V, f = 120 Hz 80

Voltage VIN = VOUT + 1V, f = 1 kHz 65 dB

PSRR (VBIAS) Ripple Rejection for VBIAS Voltage VBIAS = VOUT + 3V, f = 120 Hz 70

VBIAS = VOUT + 3V, f = 1 kHz 65

Output Noise Density f = 120 Hz µV/root−H

enOutput Noise Voltage BW = 10 Hz −100 kHz 150 µV (rms)

VOUT = 1.8V BW = 300 Hz −300 kHz 90

(1) Limits are specified through testing, statistical correlation, or design.

(2) Typical numbers represent the most likely parametric norm for 25°C operation.

(3) Output voltage line regulation is defined as the change in output voltage from nominal value resulting from a change in input voltage.

(4) Output voltage load regulation is defined as the change in output voltage from nominal value as the load current increases from no load

to full load.

(5) Dropout voltage is defined as the minimum input to output differential required to maintain the output with 2% of nominal value. The

SOIC-8 package devices have a slightly higher dropout voltage due to increased band wire resistance.

Product Folder Links: LP3881

0.8

ILOAD (A)

DROPOUT VOLTAGE (V)

0.60.40.20

0.02

0.06

0.04

0.08

0.10

0.12

25oC

-40oC

125oC

VBIAS = 5V

LP3881

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SNVS224F –MARCH 2003–REVISED APRIL 2013

TYPICAL PERFORMANCE CHARACTERISTICS

Unless otherwise specified: TA= 25°C, COUT = 4.7µF, Cin = 4.7µF, S/D pin is tied to VBIAS, VIN = 2.2V, VOUT = 1.8V

Dropout IGND

vs vs

ILVSD

Figure 4. Figure 5.

VOUT

Temperature DC Load Regulation

Figure 6. Figure 7.

Line Regulation Line Regulation

vs vs

VIN VBIAS

Figure 8. Figure 9.

Product Folder Links: LP3881

0 0.2 _0.4 _0.6 _0.8

ILOAD (A)

0.80

0.90

1.00

1.10

1.20

IBIAS (mA)

25oC

-40oC

125oC

VBIAS = 5V

VIN = 2.3V

LP3881

SNVS224F –MARCH 2003–REVISED APRIL 2013

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Unless otherwise specified: TA= 25°C, COUT = 4.7µF, Cin = 4.7µF, S/D pin is tied to VBIAS, VIN = 2.2V, VOUT = 1.8V

IBIAS IGND

vs vs

ILVSD

Figure 10. Figure 11.

Noise Measurement VOUTStartup Waveform

Figure 12. Figure 13.

Line Regulation Line Regulation

vs vs

VBIAS VBIAS

Figure 14. Figure 15.

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Unless otherwise specified: TA= 25°C, COUT = 4.7µF, Cin = 4.7µF, S/D pin is tied to VBIAS, VIN = 2.2V, VOUT = 1.8V

VIN PSRR VIN PSRR

Figure 16. Figure 17.

VBIAS PSRR

Figure 18.

Product Folder Links: LP3881

00.2 0.4 0.6 0.8

COUT ESR (:)

LOAD CURRENT (A)

COUT > 4.7 PF

STABLE REGION

.001

.01

0.1

1.0

LP3881

SNVS224F –MARCH 2003–REVISED APRIL 2013

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APPLICATION INFORMATION

Application Hints

EXTERNAL CAPACITORS

To assure regulator stability, input and output capacitors are required as shown in the Typical Application Circuit.

OUTPUT CAPACITOR

At least 4.7µF of output capacitance is required for stability (the amount of capacitance can be increased without

limit). The output capacitor must be located less than 1 cm from the output pin of the IC and returned to a clean

analog ground. The ESR (equivalent series resistance) of the output capacitor must be within the "stable" range

as shown in the graph below over the full operating temperature range for stable operation.

Figure 19. Minimum ESR vs Output Load Current

Tantalum capacitors are recommended for the output as their ESR is ideally suited to the part's requirements

and the ESR is very stable over temperature. Aluminum electrolytics are not recommended because their ESR

increases very rapidly at temperatures below 10C. Aluminum caps can only be used in applications where lower

temperature operation is not required.

A second problem with Al caps is that many have ESR's which are only specified at low frequencies. The typical

loop bandwidth of a linear regulator is a few hundred kHz to several MHz. If an Al cap is used for the output cap,

it must be one whose ESR is specified at a frequency of 100 kHz or more.

Because the ESR of ceramic capacitors is only a few milli Ohms, they are not suitable for use as output

capacitors on LP388X devices. The regulator output can tolerate ceramic capacitance totaling up to 15% of the

amount of Tantalum capacitance connected from the output to ground.

OUTPUT "BYPASS" CAPACITORS

Many designers place small value "bypass" capacitors at various circuit points to reduce noise. Ceramic

capacitors in the value range of about 1000pF to 0.1µF placed directly on the output of a PNP or P-FET LDO

regulator can cause a loss of phase margin which can result in oscillations, even when a Tantalum output

capacitor is in parallel with it. This is not unique to Texas Instruments LDO regulators, it is true of any P-type

LDO regulator.

The reason for this is that PNP or P-FET regulators have a higher output impedance (compared to an NPN

regulator), which results in a pole-zero pair being formed by every different capacitor connected to the output.

The zero frequency is approximately:

Fz= 1 / (2 X πX ESR X C)

where

• ESR is the equivalent series resistance of the capacitor

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• C is the value of capacitance (1)

The pole frequency is:

Fp= 1 / (2 X πX RLX C)

where

• RLis the load resistance connected to the regulator output (2)

To understand why a small capacitor can reduce phase margin: assume a typical LDO with a bandwidth of

1MHz, which is delivering 0.5A of current from a 2.5V output (which means RLis 5 Ohms). We then place a .047

µF capacitor on the output. This creates a pole whose frequency is:

Fp= 1 / (2 X πX 5 X .047 X 10E-6) = 677 kHz (3)

This pole would add close to 60 degrees of phase lag at the crossover (unity gain) frequency of 1 MHz, which

would almost certainly make this regulator oscillate. Depending on the load current, output voltage, and

bandwidth, there are usually values of small capacitors which can seriously reduce phase margin. If the

capacitors are ceramic, they tend to oscillate more easily because they have very little internal inductance to

damp it out. If bypass capacitors are used, it is best to place them near the load and use trace inductance to

"decouple" them from the regulator output.

INPUT CAPACITOR

The input capacitor must be at least 4.7 µF, but can be increased without limit. It's purpose is to provide a low

source impedance for the regulator input. Ceramic capacitors work best for this, but Tantalums are also very

good. There is no ESR limitation on the input capacitor (the lower, the better). Aluminum electrolytics can be

used, but their ESR increase very quickly at cold temperatures. They are not recommended for any application

where temperatures go below about 10°C.

BIAS CAPACITOR

The 0.1µF capacitor on the bias line can be any good quality capacitor (ceramic is recommended).

BIAS VOLTAGE

The bias voltage is an external voltage rail required to get gate drive for the N-FET pass transistor. Bias voltage

must be in the range of 4.5 - 6V to assure proper operation of the part.

UNDER VOLTAGE LOCKOUT

The bias voltage is monitored by a circuit which prevents the regulator output from turning on if the bias voltage

is below approximately 4V.

SHUTDOWN OPERATION

Pulling down the shutdown (S/D) pin will turn-off the regulator. Pin S/D must be actively terminated through a

pull-up resistor (10 kΩto 100 kΩ) for a proper operation. If this pin is driven from a source that actively pulls high

and low (such as a CMOS rail to rail comparator), the pull-up resistor is not required. This pin must be tied to Vin

if not used.

POWER DISSIPATION/HEATSINKING

A heatsink may be required depending on the maximum power dissipation and maximum ambient temperature of

the application. Under all possible conditions, the junction temperature must be within the range specified under

operating conditions. The total power dissipation of the device is given by:

PD= (VIN−VOUT)IOUT+ (VIN)IGND

where

• IGND is the operating ground current of the device (4)

The maximum allowable temperature rise (TRmax) depends on the maximum ambient temperature (TAmax) of the

application, and the maximum allowable junction temperature (TJmax):

TRmax = TJmax−TAmax

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The maximum allowable value for junction to ambient Thermal Resistance, θJA, can be calculated using the

formula:

θJA = TRmax / PD

These parts are available in TO-220 and TO-263 packages. The thermal resistance depends on amount of

copper area or heat sink, and on air flow. If the maximum allowable value of θJA calculated above is ≥60 °C/W

for TO-220 package and ≥60 °C/W for TO-263 package no heatsink is needed since the package can dissipate

enough heat to satisfy these requirements. If the value for allowable θJA falls below these limits, a heat sink is

required.

HEATSINKING TO-220 PACKAGE

The thermal resistance of a TO220 package can be reduced by attaching it to a heat sink or a copper plane on a

PC board. If a copper plane is to be used, the values of θJA will be same as shown in next section for TO263

package.

The heatsink to be used in the application should have a heatsink to ambient thermal resistance,

θHA≤ θJA − θCH − θJC.

In this equation, θCH is the thermal resistance from the case to the surface of the heat sink and θJC is the thermal

resistance from the junction to the surface of the case. θJC is about 3°C/W for a TO220 package. The value for

θCH depends on method of attachment, insulator, etc. θCH varies between 1.5°C/W to 2.5°C/W. If the exact value

is unknown, 2°C/W can be assumed.

HEATSINKING TO-263 PACKAGE

The TO-263 package uses the copper plane on the PCB as a heatsink. The tab of these packages are soldered

to the copper plane for heat sinking. The graph below shows a curve for the θJA of TO-263 package for different

copper area sizes, using a typical PCB with 1 ounce copper and no solder mask over the copper area for heat

sinking.

Figure 20. θJA vs Copper (1 Ounce) Area for TO-263 package

As shown in the graph below, increasing the copper area beyond 1 square inch produces very little improvement.

The minimum value for θJA for the TO-263 package mounted to a PCB is 32°C/W.

Figure 21 shows the maximum allowable power dissipation for TO-263 packages for different ambient

temperatures, assuming θJA is 35°C/W and the maximum junction temperature is 125°C.

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130

180

QJA (oC/W)

0 0.5 1.5

COPPER AREA (sq. in.)

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SNVS224F –MARCH 2003–REVISED APRIL 2013

Figure 21. Maximum power dissipation vs ambient temperature for TO-263 package

HEATSINKING SOIC PACKAGE

Heatsinking for the SOIC-8 package is accomplished by allowing heat to flow through the ground slug on the

bottom of the package into the copper on the PC board. The heat slug must be soldered down to a copper plane

to get good heat transfer. It can also be connected through vias to internal copper planes. Since the heat slug is

at ground potential, traces must not be routed under it which are not at ground potential. Under all possible

conditions, the junction temperature must be within the range specified under operating conditions.

Figure 22 shows a curve for the θJA of the SOIC package for different copper area sizes using a typical PCB with

one ounce copper in still air.

Figure 22. θJA vs. Copper (1 ounce) Area for SOIC Package

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SNVS224F –MARCH 2003–REVISED APRIL 2013

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REVISION HISTORY

Changes from Revision E (April 2013) to Revision F Page

• Changed layout of National Data Sheet to TI format .......................................................................................................... 11

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PACKAGE OPTION ADDENDUM

www.ti.com 7-Oct-2013

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LP3881ES-1.2/NOPB ACTIVE DDPAK/

TO-263 KTT 5 45 Pb-Free (RoHS

Exempt) CU SN Level-3-245C-168 HR -40 to 125 LP3881ES

-1.2

LP3881ES-1.5/NOPB ACTIVE DDPAK/

TO-263 KTT 5 45 Pb-Free (RoHS

Exempt) CU SN Level-3-245C-168 HR -40 to 125 LP3881ES

-1.5

LP3881ES-1.8/NOPB ACTIVE DDPAK/

TO-263 KTT 5 45 Pb-Free (RoHS

Exempt) CU SN Level-3-245C-168 HR -40 to 125 LP3881ES

-1.8

LP3881ESX-1.2/NOPB ACTIVE DDPAK/

TO-263 KTT 5 500 Pb-Free (RoHS

Exempt) CU SN Level-3-245C-168 HR -40 to 125 LP3881ES

-1.2

LP3881ESX-1.8/NOPB ACTIVE DDPAK/

TO-263 KTT 5 500 Pb-Free (RoHS

Exempt) CU SN Level-3-245C-168 HR -40 to 125 LP3881ES

-1.8

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 7-Oct-2013

Addendum-Page 2

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LP3881ESX-1.2/NOPB DDPAK/

TO-263 KTT 5 500 330.0 24.4 10.75 14.85 5.0 16.0 24.0 Q2

LP3881ESX-1.8/NOPB DDPAK/

TO-263 KTT 5 500 330.0 24.4 10.75 14.85 5.0 16.0 24.0 Q2

PACKAGE MATERIALS INFORMATION

www.ti.com 23-Sep-2013

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LP3881ESX-1.2/NOPB DDPAK/TO-263 KTT 5 500 367.0 367.0 45.0

LP3881ESX-1.8/NOPB DDPAK/TO-263 KTT 5 500 367.0 367.0 45.0

PACKAGE MATERIALS INFORMATION

www.ti.com 23-Sep-2013

Pack Materials-Page 2

MECHANICAL DATA

KTT0005B

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BOTTOM SIDE OF PACKAGE

TS5B (Rev D)

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DSP dsp.ti.com Energy and Lighting www.ti.com/energy

Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial

Interface interface.ti.com Medical www.ti.com/medical

Logic logic.ti.com Security www.ti.com/security

Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense

Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video

RFID www.ti-rfid.com

OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com

Wireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

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Texas Instruments:

LP3881ES-1.2 LP3881ES-1.2/NOPB LP3881ES-1.5 LP3881ES-1.5/NOPB LP3881ES-1.8 LP3881ES-1.8/NOPB

LP3881ESX-1.2 LP3881ESX-1.2/NOPB LP3881ESX-1.8 LP3881ESX-1.8/NOPB