1
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=12A
VGS=10V
L=309µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Item Symbol Ratings Unit
Drain-source voltage V DS 250
VDSX *5 220
Continuous drain current ID±37
Pulsed drain current ID(puls] ±148
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 37
Maximum Avalanche Energy EAS *1 251.9
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 3.10
Tc=25°C 115
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3651-01R
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A VGS=10V
ID=12.5A VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.087
40.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
250
3.0 5.0
25
250
10 100
75 100
816
2000 3000
400 600
25 38
20 30
30 45
60 90
20 30
44 66
14 21
16 24
37 1.10 1.65
0.45
1.5
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
*1 L=309µH, Vcc=48V *2 Tch 150°C
<
*4 VDS 250V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V *6 t=60sec f=60Hz
=
TO-3PF
[0311]
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2
Characteristics
2SK3651-01R FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
024681012
0
20
40
60
80
100
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 20406080100
0.00
0.05
0.10
0.15
0.20
0.25
7.0V6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0 25 50 75 100 125 150
0
25
50
75
100
125
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
-50 -25 0 25 50 75 100 125 150
0
30
60
90
120
150
180
210
240
270
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
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3
2SK3651-01R FUJI POWER MOSFET
VGS=f(Qg):ID=25A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 102030405060
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
96V
72V
Vcc= 36V
10-1 100101102
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700 IAS=15A
IAS=22A
IAS=37A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
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4
2SK3651-01R FUJI POWER MOSFET
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W ]
t [sec]
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