2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6497 350 250 2N6498 400 300 6.0 5.0 10 2.0 80 -65 to +150 1.56 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N6497 2N6498 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEX VCE=Rated VCBO, VBE=1.5V 1.0 1.0 ICEX VCE=1/2Rated VCBO, VBE=1.5V, TC=100C 10 10 IEBO VEB=6.0V 1.0 1.0 BVCEO IC=25mA 250 300 VCE(SAT) IC=2.5A, IB=500mA 1.0 1.25 VCE(SAT) IC=5.0A, IB=2.0A 5.0 5.0 VBE(SAT) IC=2.5A, IB=500mA 1.5 1.5 VBE(SAT) IC=5.0A, IB=2.0A 2.5 2.5 hFE VCE=10V, IC=2.5A 10 75 10 75 hFE VCE=10V, IC=5.0A 3.0 3.0 fT VCE=10V, IC=250mA, f=1.0MHz 5.0 5.0 Cob VCB=10V, IE=0, f=100kHz 150 150 tr VCC=125V, IC=2.5A, IB1=0.5A 1.0 1.0 ts VCC=125V, IC=2.5A, VBE=5.0V, IB1=IB2=0.5A 2.5 2.5 tf VCC=125V, IC=2.5A, IB1=IB2=0.5A 1.0 1.0 2N6499 450 350 2N6499 MIN MAX 1.0 UNITS V V V A A A W C C/W UNITS mA 350 10 3.0 5.0 - 10 1.0 1.5 5.0 1.5 2.5 75 150 1.0 mA mA V V V V V MHz pF s - 2.5 1.0 s s R1 (31-July 2013) 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m