HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000. 09.28
Page No. : 1/3
HSMC Product Specifi cation
H2N6520
PNP EPITAXIAL PLANAR TRAN SISTOR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitt er Breakdown Voltage
• Low Collector-Emitter Saturat ion Voltage
• The H2N6520 is complementary to H2N6517
Absolute Maximum Ratings
• Maximum Temperatures
Storage Tempera ture ....................................................................................................... -55 ~ +150 °C
Juncti o n Temp e rature ............................................................................................... +150 °C Maximum
• Ma ximum Power Dissipation
Total Power Dissipat ion (Ta=25°C)............................................................................................ 625 mW
• Maximum Vo lt ages and Currents (Ta=25 °C)
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics (Ta=25°C, *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% )
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -350 - - V IC=-100uA, IE=0
BVCEO -350 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -50 nA VCB=-250V, IE=0
IEBO - - -50 nA VEB=-4V, IC=0
*VCE(sat)1 - - -0.30 V IC=-10mA, IB=-1mA
*VCE(sat)2 - - -0.35 V IC=-20mA, IB=-2mA
*VCE(sat)3 - - -0.50 V IC=-30mA, IB=-3mA
*VCE(sat)4 - - -1 V IC=-50mA, IB=-5mA
VBE(on) - - 2 V IC=-100mA, VCE=- 10V
*VBE(sat)1 - - -0. 75 V IC=- 10mA, I B=- 1mA
*VBE(sat)2 - - -0. 85 V IC=- 20mA, I B=- 2mA
*VBE(sat)3 - - -0. 90 V IC=- 30mA, I B=- 3mA
*hFE1 20 - - VCE=-10V, IC=-1mA
*hFE2 30 - - VCE=-10V, IC=-10mA
*hFE3 30 - 200 VCE=-10V, IC=-30mA
*hFE4 20 - 200 VCE=-10V, IC=-50mA
*hFE5 15 - - VCE=-10V, IC=-100mA
fT 40 - 200 MHz IC=-10mA, VCE=-20V, f=20MHz
Cob - - 6 pF VCB=-20V, f=1MHz, IE=0