BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 3 2 2 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 1 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e Uni t 350 V Emitter-Base Voltage (IC = 0) 5 V Collector Current 15 A Collector Peak Current 30 A Base Current 1 A Base Peak Current 5 V CEO Collector-Emitter Voltage (IB = 0) V EBO IC I CM IB I BM BU941Z T P t ot Total Dissipation at Tc = 25 oC T stg Storage T emperature Tj Max. O perating Junction Temperature January 1999 BU941Z TF P A BUB941ZT 150 55 150 -65 to 175 -65 to 175 -65 to 175 o W C 175 175 175 o C 1/8 BU941ZT / BU941ZTFP / BUB941ZT THERMAL DATA R t hj-ca se Thermal Resistance Junction-case TO -220 D2PAK T O-220F P 1 2.7 Max o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO Parameter Test Cond ition s Collector Cut-off Current (I B = 0) V CE = 300 V V CE = 300 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Min. Typ . o Tj = 125 C Max. Un it 100 0.5 A mA 20 mA V CL Clamping Voltage I C = 100 mA 500 V V CE(sat ) Collector-Emitter Saturation Voltage IC = 8 A I C = 10 A I B = 100 mA IB = 250 mA 1.8 1.8 V V V BE(s at) Base-Emitt er Saturation Voltage IC = 8 A I C = 10 A I B = 100 mA IB = 250 mA 2.2 2.5 V V DC Current Gain IC = 5 A 2.5 V h F E VF ts tf 350 V CE = 10 V Diode F orward Voltage I F = 10 A Functional T est (see fig. 1) V CC = 24 V L= 7 mH INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) V CC = 12 V L= 7 mH V clamp = 300V IB = 70 mA IC = 7 A R BE = 47 V BE = 0 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area 2/8 300 DC Current Gain 10 A 15 0.5 s s BU941ZT / BU941ZTFP / BUB941ZT DC Current Gain Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Saturation Voltage Collector-emitter Saturation Voltage 3/8 BU941ZT / BU941ZTFP / BUB941ZT FIGURE 1: Functional Test Circuit FIGURE 3: Switching Time Test Circuit 4/8 FIGURE 2: Functional Test Waveforms BU941ZT / BU941ZTFP / BUB941ZT TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/8 BU941ZT / BU941ZTFP / BUB941ZT TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 1 2 3 L2 6/8 L4 BU941ZT / BU941ZTFP / BUB941ZT TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL "A" DETAIL"A" A1 B2 E B G L2 L L3 P011P6/E 7/8 BU941ZT / BU941ZTFP / BUB941ZT Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 8/8