2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDP8030L/D
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifical ly to improve t he overal l efficienc y of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply desi gns with hi gher overal l efficiency.
Features
•80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V
RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
•Critic al DC elect ric al param eters specified at
elevated tem perature
•Rugged internal s ource-drain di ode can elimi nate the
need for an external Zener diode transient
suppressor
•High performanc e trenc h technology for extremely
low RDS(ON)
•175°C maximum junction temperature rating
S
GDTO-220
FDP Series
D
GSTO-263AB
FDB Series S
D
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current – Continuous (Note 1) 80 A
– Pulsed (Note 1) 300
PDTotal Power Dissipation @ TC = 25°C187 W
Derate above 25°C1.25 W°C
TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C
TLMaximum lead temperature f or sol deri ng purposes,
1/8” from case for 5 seconds 275 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case 0.8 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
FDP8030L/FDB8030L
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Sou rce Avalanche Ratings (Note 1)
WDSSSingle Pulse Drain-Source
Avalanche Energy VDD = 20 V, ID = 80 A 1500 mJ
IAR Maximum Drain-Sourc e Avalanche
Current 80 A
Off Characteristics
BVDSSDrain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C23 mV/°C
IDSSZero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.52 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coeffic i ent ID = 250 µA, Referenc ed to 25°C–5 mV/°C
VGS = 10 V, ID = 80 A
TJ=125°C3.1
4.0 3.5
5.6 mΩ
RDS(on) Static Drain–Source
On–Resistance VGS = 4.5 V, ID = 70 A 3.6 4.5
ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10 V, ID = 80 A 170 S
Dynamic Characteristics
CissInput Capacitance 10500 pF
CossOutput Capacitance 2700 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 1650 pF
Switching Characteristics (Note 2)
tD(on) Turn–On Delay Time 20 35 ns
trTurn–On Rise Time 185 225 ns
tD (off) Turn–Off Delay Time 160 200 ns
tfTurn–Off Fall Ti me
VDD = 15 V, ID = 50 A,
VGS = 4.5 V, RGEN = 10 Ω
RGS = 10 Ω
200 240 ns
QgTotal Gate Charge 120 170 nC
Qgs Gate–Source Charge 27 nC
Qgd Gate–Drain Charge
VDS = 15 V,
ID = 80 A, VGS = 5 V
48 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current (Note 1) 80 A
ISM Maximum Pulsed Drain-S ource Diode Forward Current (Note 1) 300 A
VSD Drain–Source Di ode Forward Volt age VGS = 0 V, IS = 80 A (Note 1) 11
.3 V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP8030L/FDB8030L
Typical Characteristics
0 0.5 1 1.5 2
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5V
2.5V
4.5V
DS
D
3.0V
0 2
0406080100120
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.5V
GS
10V
3.5V 4.5V
D
6.0V
3.0V
R , NORMALIZED
DS(ON)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 80A
D
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
2345678
VGS, GATE T O SO URCE VOLT AGE (V )
RDS(ON), ON-RESISTANCE (OHM)
ID = 40A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1234
0
10
20
30
40
50
60
V , GATE TO S O URCE V O LTAGE (V)
I , DRA IN CURRE NT (A)
GS
25°C
-55°C
V = 10V
DS
D
T = 125°C
A
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0.0001
0.001
0.01
0.1
1
10
60
V , BODY DIODE FOR WARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
A
25°C
-55°C
V = 0V
GS
SD
S
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP8030L/FDB8030L
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Typical Characteristics
0 40 80 120 160 200 240
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 80A
DV = 5V
DS 10V
15V
0.1 0.5 1 2 5 10 30
500
1000
2000
5000
10000
18000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
V = 0V
GS
C
oss
C
rss
C
iss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
0
1000
2000
3000
4000
5000
SINGLE PULSE TIME (mSEC)
POWER (W)
SINGLE PULSE
R = 0.8°C/W
T = 25 °C
θJC
C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
0.005
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Singl e Pulse
D = 0. 5
0.1
0.05
0.02
0.01
0.2
r(t), NORMALI ZE D EF F E CTI V E
1
Duty Cycle, D = t /t
12
R (t) = r(t) * R
R = 0.8 °C/W
θJC
θJC
θJC
T - T = P * R (t)
θJC
CJ
P(pk)
t
1 t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP8030L/FDB8030L
0.1 0.3 1 3 10 30 100 300 1,000
1
10
100
600
0.1 110 100
100 μs
CURVE BENT TO
MEASURED DATA
10 ms
DC
100 ms
1 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MA X RATED
RθJC = 0.8
o
C/W
TC = 25 oC
10
1
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