September 2002 / A
Page 1
SEMICONDUCTOR
TAK CHEON
G
®
500 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 500 mW
TSTG Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature +175 ° C
WIV Working Inverse Voltage 75 V
IO Average Rectifi ed Current 150 mA
IFM Non-repetitive P eak Forward Current 450 mA
IFSURGE Peak Forward Surge Current 2 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
DO-34 Package (JEDE C DO-204)
Through-Hole Device Type Mounting
Hermetic ally Seal ed Glass
Compress i on Bonded Construct i on
All external surfac es are corros i on resistant and leads are readily solderable
Cathode indic ated by polari ty band
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=100µA
IR=5µA
100
75
Volts
IR Reverse Leakage Current VR=20V
VR=75V
25
5
nA
µA
VF Forward Voltage TC1N4448M, TC1N914BM
TC1N4148M, TC1N4148M
TC1N4448M, TC1N914BM
IF=5mA
IF=10mA
IF=100mA
0.62 0.72
1.0
1.0
Volts
TRR Reverse Recovery Tim e IF=IR=10mA
RL=100Ω
IRR=1mA
4 nS
C Capacitance VR=0V, f=1MHZ 4 pF
Cathode Anode
ELECTRICAL SYMBOL
TC1N4148M/TC1N4448M/TC1N914BM
L
DEVICE MARKING DIAGRAM
(TC1N4148M)
L : Lo
g
o
AXIAL LEAD
DO34
L xxxx
L : Lo
g
o
Device Code : TC1NxxxxM
DEVICE MARKING DIAGRAM
(TC1N4148M)
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914B M )
September 2002 / A
Page 2
SEMICONDUCTOR
TAK CHEON
G
®
Electrical Symbol Definition Typical Characteristics
Symbol Parameter
BV Breakdown Voltage @ IR
IR Reverse Leakage Current @ VR
VR Reverse Volt age
IF Forward Current
VF Forward Voltage @ IF
Ordering Information
Device Package Quantity
TC1NxxxxM Bulk 10,000
TC1NxxxxM.TB Tape and Ammo 5,000
TC1NxxxxM.TR Tape and Reel 10,000
TC1NxxxxM Others (…contact T ak Cheong sales representatives)
Axial-Lead Tape Packaging Standards
This axial-lead com ponent’s pac kaging requirem ents use i n automatic t esting and assembl y equipment. A nd this st andard practices for
lead-tape packagi ng of axial-lead components meets the requirements of EIA Standard RS -296-D “Lead-taping of Components on Axial
Lead Configurati on for A utomati c Ins ertion”.
V
I
(
mV
)
(
V
)
(
mA
)
(
µ
A
)
VF
IF
BV
IR
IR
VR
(
nA
)
September 2002 / A
Page 3
SEMICONDUCTOR
TAK CHEON
G
®
Tape & Reel Packaging Information
Tape & Reel
Outline
Reel Dimensions
DIM Millimeters
D1 356
D2 30
D3 84
W1 77.5
Quantity Per Reel
PKG Type Quantity Per Reel
DO-34 10,000
September 2002 / A
Page 4
SEMICONDUCTOR
TAK CHEON
G
®
Tape & Ammo Packaging Information
Tape & Ammo
Outline
Quantity Per Ammo
Box
PKG Type Quantity Per Box
DO-34 5,000
Taping Dim ens ions
Description Millimeters
Standard Width 52 26
Tape Spacing (B) 52 ± 0.69 26 +0.5 / -0
Component Pitch (C) 5.08 ± 0.4 5.08 ± 0.4
Untaped Lead (L1 – L2) ± 0.69 ± 0.69
Glass Offset (F) ± 0.69 ± 0.69
Bent (D) 1.2 Max 1.2 Max
Tape Width (G) 6.138 ± 0.576 6.138 ± 0.576
Tape Mismatch (E) 0.55 Ma x 0.55 Max
Taped Lead (G) 3.2 Min 3.2 Min
Lead Beyond Tape (H) 0 0
250mm x 80mm x 80mm
September 2002 / A
Page 5
SEMICONDUCTOR
TAK CHEON
G
®
Bulk Packaging Information
Bulk Outline
Quantity Per Box
PKG Type Quanti ty Per Box
DO-34 10,000
Plas tic Bag
250mm x 80mm x 80mm
DO-34 1000 x 10 Plastic Bag
Quantity Per Plastic Bag
September 2002 / A
Page 6
SEMICONDUCTOR
TAK CHEON
G
®
Package Outline
Package Case Outline
DO-34 DO-34
Millimeters Inches
DIM
Min Max Min Max
A 0.46 0.55 0.018 0.022
B 2.16 3.04 0.085 0.120
C 25.40 38.10 1.000 1.500
D 1.27 1.90 0.050 0.075
Notes: 1. All dimensions are with i n JE DEC standard.
2. DO34 polarity denot ed by cat hode band.
