BAP70-02 Silicon PIN diode Rev. 05 -- 2 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Silicon PIN diode BAP70-02 FEATURES PINNING * High voltage, current controlled RF resistor for attenuators PIN * Low diode capacitance * Very low series inductance. APPLICATIONS handbook, halfpage * RF attenuators * (SAT)TV DESCRIPTION 1 cathode 2 anode 1 2 Top view * Car radio. MAM405 Marking code: K8. DESCRIPTION Fig.1 Simplified outline (SOD523) and symbol. Planar PIN diode in a SOD523 ultra small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage - 50 V IF continuous forward current - 100 mA Ptot total power dissipation - 415 mW Tstg storage temperature Ts = 90 C -65 +150 C Tj junction temperature -65 +150 C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.9 1.1 V IR reverse leakage current VR = 50 V - 100 nA Cd diode capacitance VR = 0 V; f = 1 MHz 570 - fF VR = 1 V; f = 1 MHz 400 - fF VR = 5 V; f = 1 MHz 270 - fF VR = 20 V; f = 1 MHz 200 250 fF IF = 0.5 mA; f = 100 MHz 77 100 rD diode forward resistance IF = 1 mA; f = 100 MHz 40 50 IF = 10 mA; f = 100 MHz 5.4 7 IF = 100 mA; f = 100 MHz 1.4 1.9 L charge carrier life time when switched from IF = 10 mA to 1.25 IR = 6 mA; RL = 100 ; measured at IR = 3 mA - s LS series inductance IF = 100 mA; f = 100 MHz - nH Rev. 05 - 2 January 2008 0.6 2 of 6 NXP Semiconductors Product specification Silicon PIN diode BAP70-02 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT 145 K/W thermal resistance from junction to soldering point Rth j-s GRAPHICAL DATA MCE007 103 handbook, halfpage MCE008 600 Cd (fF) 500 handbook, halfpage rD () 102 400 300 10 200 100 1 10-1 1 102 10 0 0 IF (mA) 5 f = 100 MHz; Tj = 25 C. f = 1 MHz; Tj = 25 C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. Rev. 05 - 2 January 2008 10 15 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. 3 of 6 NXP Semiconductors Product specification Silicon PIN diode BAP70-02 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 Rev. 05 - 2 January 2008 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 4 of 6 BAP70-02 NXP Semiconductors Silicon PIN diode Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 05 - 2 January 2008 5 of 6 BAP70-02 NXP Semiconductors Silicon PIN diode Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BAP70-02_N_5 20080102 Product data sheet - BAP70-02_N_4 Modifications: * Package outline drawing on page 4 changed BAP70-02_N_4 20070322 Product data sheet - BAP70-02_3 BAP70-02_3 (9397 750 10093) 20020806 Product specification - BAP70-02_N_2 BAP70-02_N_2 (9397 750 10079) 20020702 Preliminary specification - BAP70-02_N_1 BAP70-02_N_1 (9397 750 09578) 20020402 Preliminary specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 January 2008 Document identifier: BAP70-02_N_5