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NXP Semiconductors
BAP70-02
Silicon PIN diode
Rev. 05 — 2 January 2008 Product data sheet
NXP Semiconductors Product specification
Silicon PIN diode BAP70-02
FEATURES
•High voltage, current controlled RF resistor for
attenuators
•Low diode capacitance
•Very low series inductance.
APPLICATIONS
•RF attenuators
•(SAT)TV
•Car radio.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
12
Top view
MAM405
Marking code: K8.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage −50 V
IFcontinuous forward current −100 mA
Ptot total power dissipation Ts=90°C−415 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF= 50 mA 0.9 1.1 V
IRreverse leakage current VR=50V −100 nA
Cddiode capacitance VR= 0 V; f = 1 MHz 570 −fF
VR= 1 V; f = 1 MHz 400 −fF
VR= 5 V; f = 1 MHz 270 −fF
VR= 20 V; f = 1 MHz 200 250 fF
rDdiode forward resistance IF= 0.5 mA; f = 100 MHz 77 100 Ω
IF= 1 mA; f = 100 MHz 40 50 Ω
IF= 10 mA; f = 100 MHz 5.4 7 Ω
IF= 100 mA; f = 100 MHz 1.4 1.9 Ω
τLcharge carrier life time whenswitchedfrom IF=10mAto
I
R= 6 mA; RL= 100 Ω;
measured at IR=3mA
1.25 −µs
L
Sseries inductance IF= 100 mA; f = 100 MHz 0.6 −nH
Rev. 05 - 2 January 2008
2 of 6
NXP Semiconductors Product specification
Silicon PIN diode BAP70-02
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 145 K/W
GRAPHICAL DATA
handbook, halfpage
103
102
10
1
MCE007
10−1110
r
D
(Ω)
I
F
(mA) 102
Fig.2 Forward resistance as a function of forward
current; typical values.
f = 100 MHz; Tj=25°C.
handbook, halfpage
0510
C
d
(fF)
20
VR (V)
600
0
200
400
500
100
300
15
MCE008
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
Rev. 05 - 2 January 2008
3 of 6
NXP Semiconductors Product specification
Silicon PIN diode BAP70-02
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD523 SC-79 02-12-13
06-03-16
Plastic surface-mounted package; 2 leads SOD523
0 0.5 1 mm
scale
D
12
HE
Ebp
A
c
vMA
A
UNIT bpcDEv
mm
AH
E
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1) 0.34
0.26 0.17
0.11 0.1
0.85
0.75
1.25
1.15
0.65
0.58 1.65
1.55
Rev. 05 - 2 January 2008
4 of 6
NXP Semiconductors BAP70-02
Silicon PIN diode
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 05 - 2 January 2008
5 of 6
NXP Semiconductors BAP70-02
Silicon PIN diode
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 January 2008
Document identifier: BAP70-02_N_5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAP70-02_N_5 20080102 Product data sheet - BAP70-02_N_4
Modifications: •Package outline drawing on page 4 changed
BAP70-02_N_4 20070322 Product data sheet - BAP70-02_3
BAP70-02_3
(9397 750 10093) 20020806 Product specification - BAP70-02_N_2
BAP70-02_N_2
(9397 750 10079) 20020702 Preliminary specification - BAP70-02_N_1
BAP70-02_N_1
(9397 750 09578) 20020402 Preliminary specification - -
