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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES * This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz * MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz * Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V * 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG250134 Order Number Package NESG250134-AZ 3-pin power minimold (Pb-Free) NESG250134-T1 Quantity Note1, 2 25 pcs Supplying Form * Magazine case (Non reel) NESG250134-T1-AZ 1 kpcs/reel * 12 mm wide embossed taping * Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 500 mA 1.9 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 34.2 cm x 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10422EJ03V0DS (3rd edition) Date Published October 2004 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices, Ltd. 2003, 2004 NESG250134 THERMAL RESISTANCE (TA = +25C) Parameter Termal Resistance from Junction to Ambient Symbol Ratings Unit Rthj-a 65 C/W Note 2 Note Mounted on 34.2 cm x 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25C) Parameter Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE - 3.6 4.5 V IC - 400 500 mA Pin - 12 17 dBm Note Input power under conditions of VCE 4.5 V, f = 460 MHz 2 Data Sheet PU10422EJ03V0DS NESG250134 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA - - 1 A Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA - - 1 A VCE = 3 V, IC = 100 mA 80 120 180 - VCE = 3.6 V, IC = 100 mA, f = 460 MHz - 10 - GHz VCE = 3.6 V, IC = 100 mA, f = 460 MHz - 19 - dB VCE = 3.6 V, IC = 100 mA, f = 460 MHz - 23 - dB VCE = 3.6 V, IC (set) = 30 mA (RF OFF), 16 19 - dB - 16 - dB 27 29 - dBm - 29 - dBm - 60 - % - 60 - % DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT S21e 2 Insertion Power Gain Maximum Satble Gain MSG Linner gain (1) Note 2 GL f = 460 MHz, Pin = 0 dBm Linner gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm c Collector Efficiency (1) VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm c Collector Efficiency (2) VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. MSG = S21 S12 hFE CLASSIFICATION Rank FB Marking SN hFE Value 80 to 180 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PU10422EJ03V0DS 3 NESG250134 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 1.9 Reverse Transfer Capacitance Cre (pF) 2.0 Mounted on Glass epoxy PWB (34.2 cm2 x 0.8 mm (t) ) 1.6 1.2 0.8 Nature Neglect 0.4 25 0 1 000 50 75 100 125 150 1.2 1.0 0.8 0.6 0.4 0.2 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 10 VCE = 4 V Collector Current IC (mA) 100 1 0.1 0.01 10 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 Base to Emitter Voltage VBE (V) 500 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 3 mA 200 2 mA 100 IB = 1 mA 1 2 3 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 6 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.001 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 4 4 Collector to Base Voltage VCB (V) 10 0 2 Ambient Temperature TA (C) 100 Collector Current IC (mA) f = 1 MHz 1.4 0 VCE = 3 V 0.0001 0.4 1.6 Data Sheet PU10422EJ03V0DS 1.0 NESG250134 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 4 V DC Current Gain hFE DC Current Gain hFE VCE = 3 V 100 10 10 100 10 10 1 000 1 000 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 460 MHz 16 12 8 4 0 10 100 VCE = 3.6 V f = 460 MHz 16 12 8 4 0 10 1 000 Collector Current IC (mA) 16 12 8 4 1 000 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 4 V f = 460 MHz 100 1 000 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 20 0 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) 100 Collector Current IC (mA) 20 Gain Bandwidth Product fT (GHz) 100 40 VCE = 3 V IC = 100 mA 35 30 MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 Collector Current IC (mA) 10 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10422EJ03V0DS 5 NESG250134 VCE = 3.6 V IC = 100 mA 35 30 MSG MAG 25 20 15 10 5 0 0.1 |S21e|2 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 30 MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 10 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 460 MHz MSG MAG 20 |S21e|2 15 10 5 0 10 100 1 000 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Frequency f (GHz) 25 VCE = 3 V f = 900 MHz 20 MSG MAG 15 10 |S21e|2 5 0 -5 10 100 1 000 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3.6 V f = 460 MHz MSG MAG 20 15 |S21e|2 10 5 0 10 100 1 000 25 VCE = 3.6 V f = 900 MHz 20 MSG MAG 15 10 |S21e|2 5 0 -5 10 Collector Current IC (mA) 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 VCE = 4 V IC = 100 mA 35 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Data Sheet PU10422EJ03V0DS 1 000 NESG250134 VCE = 4 V f = 460 MHz 25 MSG MAG 20 |S21e|2 15 10 5 0 10 100 1 000 25 VCE = 4 V f = 900 MHz 20 MSG MAG 15 |S21e|2 10 5 0 -5 10 100 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 600 VCE = 3.6 V, f = 460 MHz IC (set) = 30 mA 500 GP 20 400 15 300 Pout 10 200 IC 5 100 C 0 -10 -5 0 5 10 0 20 15 Input Power Pin (dBm) Output Power Pout (dBm), Power Gain GP (dB) Collector Current IC (mA) Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) Collector Current IC (mA) 1 000 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 Collector Current IC (mA), Collector Efficiency C (%) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 600 VCE = 3.6 V, f = 900 MHz IC (set) = 30 mA 500 Pout 20 15 400 GP 300 10 200 IC 5 0 -10 100 C -5 0 5 10 15 0 20 Input Power Pin (dBm) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 4 20 3 15 10 2 NF 5 1 Associated Gain Ga (dB) Noise Figure NF (dB) Ga VCE = 3.6 V f = 460 MHz 0 10 100 0 1 000 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10422EJ03V0DS 7 NESG250134 PA EVALUATION BOARD (f = 460 MHz) GND Vb VC GND R1 C10 C9 C8 C1 SN SN RF IN RF OUT C2 C7 C3 L1 C4 C6 C5 L2 Notes 1. 38 x 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes PA EVALUATION CIRCUIT (f = 460 MHz) VCE VBE R1 C10 C9 L2 C8 L1 RF OUT C1 RF IN C6 C2 C3 C4 C7 C5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 8 Data Sheet PU10422EJ03V0DS NESG250134 COMPONENT LIST Value Maker C1 30 pF Murata C2 6 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 0.5 pF Murata C7 5 pF Murata C8 10 pF Murata C9, C10 100 nF Murata L1 100 nH Toko L2 3 nH Toko R1 30 SSM OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 600 VCE = 3.6 V, f = 460 MHz IC (set) = 40 mA 500 GP 20 400 15 300 Pout 10 200 IC 5 0 -10 100 C -5 0 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Remark The graph indicates nominal characteristics. Data Sheet PU10422EJ03V0DS 9 NESG250134 DISTORTION EVALUATION BOARD (f = 460 MHz) GND Vb VC GND R1 C12 C11 C10 C9 C1 SN SN RF IN RF OUT C8 C3 C2 C4 L1 C5 C6 C7 L2 Notes 1. 38 x 90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes DISTORTION EVALUATION CIRCUIT (f = 460 MHz) VCE R1 VBE C12 C11 C10 L2 C9 L1 RF OUT C1 RF IN C6 C2 C3 C4 C7 C8 C5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 10 Data Sheet PU10422EJ03V0DS NESG250134 COMPONENT LIST Value Maker C1 47 pF Murata C2 12 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 6 pF Murata C7 0.5 pF Murata C8 5 pF Murata C9 51 pF Murata C10, C12 100 nF Murata 1 F Murata L1 100 nH Toko L2 15 nH Toko R1 30 SSM C11 3rd Order Intermodulation Distortion IM3 (dBc) DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS 3RD ORDER INTERMODULATION DISTORTION vs. 1 TONE OUTPUT POWER 80 VCE = 3.6 V, f = 460 MHz, IC (set) = 30 mA, offset = 1 MHz 70 60 50 40 30 20 10 0 -5 0 5 10 15 20 25 1 tone Output Power Pout (dBm) Remark The graph indicates nominal characteristics. Data Sheet PU10422EJ03V0DS 11 NESG250134 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 4.50.1 1.50.1 0.8 MIN. 2 1 3 0.420.06 4.00.25 2.50.1 1.60.2 0.420.06 0.470.06 1.5 3.0 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 12 Data Sheet PU10422EJ03V0DS 0.41+0.03 -0.06 NESG250134 * The information in this document is current as of October, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PU10422EJ03V0DS 13 NESG250134 For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406