IDC51D120T6H
Edited by INFINEON Technologies, AIM PMD D CID T, L4673A, Edition 0.9, 26.06.07
Diode EMCON 4 High Power Chip
This chip is used for:
• medium / high power modules
FEATURES:
• 1200V EMCON 4 technology
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Applications:
• medium / high power drives
A
C
Chip Type VR IF Die Size Package
IDC51D120T6H 1200V
100A 7.00 x 7.30 mm2 sawn on foil
MECHANICAL PARAMETER:
Raster size 7.00 x 7.30
Area total / active 51.10 / 39.99
Anode pad size 6.046 x 6.346
mm2
Thickness 120 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 277 pcs
Passivation frontside Photoimide
Pad metall 3200 nm AlSiCu
Backside metall Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, ≤500µm
Reject ink dot size ∅ 0.65mm; max 1.2mm
Recommended storage environment store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
IDC51D120T6H
Edited by INFINEON Technologies, AIM PMD D CID T, L4673A, Edition 0.9, 26.06.07
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage VRRM 1200 V
Continuous forward current limited by
Tjmax IF
1 )
Maximum repetitive forward current
limited by Tjmax IFRM 200 A
Maximum junction and storage
temperature Tvj,max ,
Tstg -40...+175 °C
Reverse bias safe operating area2)
(RBSOA) IF,max = 200A, VR,max = 1200V, Tvj,op ≤ 150°C, Pmax = tbd kW
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterisation
Static Electrical Characteristics (tested on wafer), Tj=25 °C
Value
Parameter Symbol Conditions min. Typ. max. Unit
Reverse leakage current IR VR=1200V Tj=25°C 18 µA
Cathode-Anode
breakdown Voltage VBr IR=0.25mA Tj=25°C 1200 V
Forward voltage drop VF IF=100A Tj=25°C 1.55 1.9 2.25 V
Dynamic Electrical Characteristics inductive load (not subject to production test - verified by
design/characterization) Value 2)
Parameter Symbol Conditions min. Typ. max. Unit
Peak reverse recovery
current IRM
IF=A
di/dt=A/µs
VR=V
VGE=-15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C tbd A
Reverse recovery
charge Qr
IF=A
di/dt=A/µs
VR=V
VGE=-15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C tbd µC
Reverse recovery energy
Erec
IF=A
di/dt=A/µs
VR=V
VGE=-15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C tbd mJ
2) values also influenced by parasitic L- and C- in measurement and package.
IDC51D120T6H
Edited by INFINEON Technologies, AIM PMD D CID T, L4673A, Edition 0.9, 26.06.07
CHIP DRAWING:
IDC51D120T6H
Edited by INFINEON Technologies, AIM PMD D CID T, L4673A, Edition 0.9, 26.06.07
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
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