SQD50AB100 Be SE ed oe er a SQDSOAB is a high speed, high power Darlington transistor designed for use in Resonance circuit. The transistor has a reverse paralleled fast recovery diode. @ Veoo= 1000V, Io=50A @ Suitable for Resonance circuit applications. yes @ Non-isolated. ww (Applications) me, T ; Induction Cooker, InvertegoMi for} Den etc. ore IE Unit : mm MiMaximum Ratings Tj=25C Symbol Item Conditions Ratings Unit Vceo Collector-Base Voltage 1000 v Vceo Collector-Emitter Voltage tc=25mA 450 V Veso Emitter-Base Voltage 11 V ic Collector Current (Peak 50 (100) a Ic Reverse Collector Current 6 ls Base Current 5 A Pr Total power dissipation 350 wW Tj Junction Temperature 30~ + 150 C Tstg Storage Temperature 30~4+125 c Mounting Torque (M4) Recommended Value 1.0~1.4 (10~14) 15 (15) (ieteon) Electrical Characteristics Tj=25C Symbol Item Conditions 5 Ratings Unit Min. | Typ. | Max. lesa Collector Cut-off Current Vee = 1000V 1.0 mA lego Emitter Cut-off Current Veo HV Ti= 25C ee 830 mA Ves =11V Tj= 10C 700 Vceosus) | Collector-Emitter lc=25mA 450 Vv Voex(sus} Sustaning Voltage Ic=1A laz= 10A 800 Ic=10A Vce=5V 300 hee DC Current Gain Ic=50A Vor =5V 70 120 250 Vce(sat) | Collector-Emitter Saturation Voltage Ic=50A le=1A 2.0 V Vee(sat) | Base-Emitter Saturation Voltage Ic=50A Ile=1A 2.8 v ton On Time 3.5 ts Switching Time Storage Time ieee eS 3.0 BS tf Fall Tjme 1.75 Veco Collector-Emitter Reverse Voltage lc=10A 1.5 V trr Reverse Recovery time le= 2A di/dt= 20A/us 3 Ss Rth(j-c) | Thermal Impedance (junction to case) 0.36 | c/w(2-stage Darlington) SQD50AB 00 DC Current Gain Saturation Characteristics T a S Typical (c=25A c= BOA mm vce=2V Wee w ol <= oO WwW a> 3 cf) ak] c c= 5 ao $> 3 ek 6 pe Q Le a ge ow oa =o ons om 0.5 1.0 2.0 5.0 0. : : 5 10 Collector Current Ic (A) Base Current Ip (A) moh orward Bias Safe Operating Area Reverse Bias Safe Operating Area fa =2A 8 100 ~ laz=10A x= <x Ves=10V 2 2 rey E 3 Tj=125C a oo 5 1 3 . Q 7 8 3 3 8 Oo 1 0.5 0. 5 1020 50 = 100200 500 Collector-Emitter Voltage Vce (V) Collector-Emitter Voltage Vce (V) wo Collector Current Derating Factor Forward Voltage of Free Wheeling Diode 00 an Q Ky J IS/B Limited Le < 9 T 5 E 20 50 N gl op PrLimited NY t $ 5 IN rd 5 5 T= 10 i) T= 90C a T= 2 Typical a T= 30C o | 9 50 100 150 0.5 : . . 2.5 -0 Case Temperature (C) Emitter-Collector Voltage Veco (V) Maximum Transient Thermal Impedance 10 Collector Current Vs Switching Time Characteristics . 0. Typical 5.0 0.2 0.1 0. 0.01 0.2 Switching Time ton tf ts(zs) a ansient Thermal Impedance @j-c (C/W) 2 0 50 Collector Current Ic (A) 30079n2 ANAIAIAIAN 3Az7AA 50u_ 1004 20 POI | ao 50m 100m 200m 500m 1 2 5 10 20 50s Time t (sec) ie TRANSISTOR