2N4918 - ON Semiconductor - Datasheet.Directory

 Semiconductor Components Industries, LLC, 2004

July, 2004 − Rev. 11 1Publication Order Number:

2N4918/D

2N4918 − 2N4920* Series

Preferred Device

Medium−Power Plastic PNP

Silicon Transistors

These medium−power, high−performance plastic devices are

designed for driver circuits, switching, and amplifier applications.

Features

•Pb−Free Package is Available**

•Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A

•Excellent Power Dissipation Due to Thermopad Construction,

PD = 30 W @ TC = 25C

•Excellent Safe Operating Area

•Gain Specified to IC = 1.0 A

•Complement to NPN 2N4921, 2N4922, 2N4923

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage 2N4918

2N4919

2N4920

VCEO 40

60

80

Vdc

Collector − Base Voltage 2N4918

2N4919

2N4920

VCBO 40

60

80

Vdc

Emitter − Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous

(Note 1) IC

(Note 2) 1.0

3.0 Adc

Base Current IB1.0 Adc

Total Power Dissipation @ TA = 25°C

Derate above 25°CPD30

0.24 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The

3.0 A max value is based upon actual current−handling capability of the

device (See Figure 5).

2. Indicates JEDEC Registered Data for 2N4918 Series.

THERMAL CHARACTERISTICS (Note 3)

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case JC 4.16 °C/W

3. Recommend use of thermal compound for lowest thermal resistance.

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

3.0 A, 40−80 V, 30 W

GENERAL PURPOSE

POWER TRANSISTORS

*Preferred devices are recommended choices for future

use and best overall value.

TO−225

CASE 077

STYLE 1

1

2

3

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xx = 18, 19, 20

Y = Year

WW = Work Week

MARKING DIAGRAM

YWW

2N

49xx

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 4)

(IC = 0.1 Adc, IB = 0) 2N4918

2N4919

2N4920

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

40

60

80

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) 2N4918

(VCE = 30 Vdc, IB = 0) 2N4919

(VCE = 40 Vdc, IB = 0) 2N4920

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.1

0.5

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎ

−

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 4)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

40

30

10

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

150

−

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage (Note 4)

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.6

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage (Note 4)

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

−

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (Note 4)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.3

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SMALL−SIGNAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

fT

ÎÎÎ

3.0

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

−

ÎÎÎÎ

100

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

25

ÎÎÎÎ

−

ÎÎÎ

−

4. Pulse Test: PW  300 s, Duty Cycle  2.0%

ORDERING INFORMATION

Device Package Shipping†

2N4918 TO−225 500 Unit / Bulk

2N4919 TO−225 500 Unit / Bulk

2N4920 TO−225 500 Unit / Bulk

2N4920G TO−225

(Pb−Free) 500 Unit / Bulk

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

2N4918 − 2N4920* Series

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3

40

30

20

10

025 50 75 100 125 150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Equivalent Test Circuit

5.0

10

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (mA)

VCC = 30 V

IC/IB = 20

t, TIME (s)µ

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.05 20 30 50 70 100 200 700 1000

Vin

t1

VBE(off)

APPROX 9.0 V

TURN−OFF PULSE

t3

t2

APPROX

−11 V

VCC

SCOPE

RB

Cjd<<Ceb

+4.0 V

t1 < 15 ns

100 < t2 < 500 s

t3 < 15 ns

DUTY CYCLE ≈ 2.0%

Vin

RC

0.07

3.0 TJ = 25°C

TJ = 150°C

IC/IB = 10, UNLESS NOTED

VCC = 60 V

VCC = 30 V

VBE(off) = 0

300 500

0

0Vin

APPROX

−11 V

RB and RC

varied to

obtain desired

current levels

tr

VBE(off) = 2.0 V

VCC = 60 V

td

2N4918 − 2N4920* Series

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4

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(t) = r(t) JC

JC = 4.16°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) JC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

10

1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 3.0 5.0 10 20 30 50 10070

0.2

IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

dc

5.0 ms 100 s

7.0

PULSE CURVES APPLY BELOW

RATED VCEO

1.0 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMIT @ TC = 25°C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

 150C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

tµ

s, STORAGE TIME (s)

′

tµ

f, FALL TIME (s)

5.0

10

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

ts′ = ts − 1/8 tf

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 20

5.0

10

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 10

IC/IB = 20

IC/IB = 10

IB1 = IB2

VCC = 30 V

IB1 = IB2

2N4918 − 2N4920* Series

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TYPICAL DC CHARACTERISTICS

RBE, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

−0.2

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10 3.0 5.0 10 20 30 200 300 500 2000

500

200

100

70

Figure 9. Collector Saturation Region

1.0

0.2

IB, BASE CURRENT (mA)

00.3 0.5 1.0 2.0 5.0 10 20 50 200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25°C

0.25 A 0.5 A 1.0 A

700

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

−55 °C

VCE = 1.0 V

50

30

20

50 100 1000 3.0 30 100

108

0

Figure 10. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

30 60 90 120 150

107

105

104

103

VCE = 30 V

IC = 10 ICES

IC = 2x ICES

IC ≈ICES

ICES VALUES

OBTAINED FROM

FIGURE 13

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0 10 20 30 50 100 200 300 2000

1.2

0.9

0.6

0.3

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

Figure 11. “On” Voltage

3.0 500 1000

VBE @ VCE = 2.0 V

102

Figure 12. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

101

100

10−1

, COLLECTOR CURRENT (A)µIC

10− 2

103

−0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

FORWARD

IC = ICES

104

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0 10 20 30 50 100 200 2000

TJ = −55°C to +100°C

TEMPERATURE COEFFICIENTS (mV/ C)°

+2.0

+1.5

+0.5

0

−0.5

−1.0

−1.5

−2.0

−2.5

VB FOR VBE

*VC FOR VCE(sat)

TJ = 100°C to 150°C

*APPLIES FOR IC/IB < hFE@VCE  1.0V

2

+1.0

300 500 1000

REVERSE

2N4918 − 2N4920* Series

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PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A− M

K

FC

Q

H

V

G

S

D

JR

U

132

2 PL

M

A

M

0.25 (0.010) B M

M

A

M

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 −−− 1.02 −−−



STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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