BSM150GB120DN2E3166 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Enlarged diode area * Package with insulated metal base plate Type VCE IC BSM150GB120DN2E3166 1200V 210A Package Ordering Code HALF-BRIDGE 2 C67076-A2112-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 210 TC = 80 C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 420 TC = 80 C 300 Ptot Power dissipation per IGBT TC = 25 C W 1250 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.1 Diode thermal resistance, chip case RthJCD 0.125 Insulation test voltage, t = 1min. Vis Creepage distance + 150 C -55 ... + 150 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Aug-02-1996 BSM150GB120DN2E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 6 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 150 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 150 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 C - 2 3 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 10 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 320 AC Characteristics Transconductance gfs VCE = 20 V, IC = 150 A Input capacitance 62 nF - 11 - - 1.6 - - 0.6 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Aug-02-1996 BSM150GB120DN2E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Rise time - 200 400 - 100 200 - 600 800 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Fall time tf VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Free-Wheel Diode Diode forward voltage VF V IF = 150 A, VGE = 0 V, Tj = 25 C 1.4 1.8 2.3 IF = 150 A, VGE = 0 V, Tj = 125 C - 1.35 - Reverse recovery time trr s IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C Reverse recovery charge - 0.5 - Qrr C IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C - 12 - Tj = 125 C - 36 - Semiconductor Group 3 Aug-02-1996 BSM150GB120DN2E3166 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1300 W tp = 18.0s A 1100 Ptot IC 1000 900 10 2 100 s 800 700 600 1 ms 500 10 1 400 300 10 ms 200 100 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 240 A K/W 200 IC ZthJC 180 10 -1 160 140 10 -2 120 D = 0.50 100 0.20 0.10 80 0.05 10 -3 60 0.02 40 0.01 single pulse 20 0 0 20 40 60 80 100 120 C 160 TC Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Aug-02-1996 BSM150GB120DN2E3166 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 300 300 A A 260 IC 240 220 200 260 17V 15V 13V 11V 9V 7V IC 240 220 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 0 0 20 0 0 1 2 3 V 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 300 A 260 IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Aug-02-1996 BSM150GB120DN2E3166 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 150 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V 10 1 Ciss 12 10 8 Coss 10 0 6 Crss 4 2 0 0 200 400 600 800 nC 10 -1 0 1100 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Aug-02-1996 BSM150GB120DN2E3166 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6 par.: VCE = 600 V, VGE = 15 V, IC = 150 A 10 4 10 4 ns ns t t 10 3 tdoff 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 50 100 150 200 250 300 A IC 10 1 0 400 10 20 30 40 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6 par.: VCE = 600V, VGE = 15 V, IC = 150 A 120 120 mWs mWs Eon E E 80 80 60 60 40 Eon 40 Eoff Eoff 20 0 0 20 50 100 Semiconductor Group 150 200 250 300 A IC 400 7 0 0 10 20 30 40 60 RG Aug-02-1996 BSM150GB120DN2E3166 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 300 A Tj=125C K/W Tj=25C 260 IF Diode 240 ZthJC 10 -1 220 200 180 160 10 -2 140 D = 0.50 120 0.20 0.10 100 0.05 10 -3 80 0.02 60 20 0 0.0 0.01 single pulse 40 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -4 -5 10 8 Aug-02-1996 BSM150GB120DN2E3166 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Aug-02-1996