IRLZ44Z/S/LPbF
2www.irf.com
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Parameter Min. T
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
e55––––––V
∆V(BR)DSS
∆TJ Breakdown Volta
e Temp. Coefficient ––– 0.05 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 11 13.5 m
––– ––– 20 m
––– ––– 22.5 m
VGS(th) Gate Threshold Volta
e 1.0 ––– 3.0 V
fs Forward Transconductance 27 ––– ––– V
IDSS Drain-to-Source Leaka
e Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
QgTotal Gate Char
e ––– 24 36
Qgs Gate-to-Source Char
e ––– 7.5 ––– nC
Qgd Gate-to-Drain ("Miller") Char
e–––12–––
td(on) Turn-On Dela
Time ––– 14 –––
trRise Time ––– 160 –––
td(off) Turn-Off Dela
Time ––– 25 ––– ns
tfFall Time ––– 42 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from packa
e
and center of die contact
Ciss Input Capacitance ––– 1620 –––
Coss Output Capacitance ––– 230 –––
Crss Reverse Transfer Capacitance ––– 130 ––– pF
Coss Output Capacitance ––– 860 –––
Coss Output Capacitance ––– 180 –––
Coss eff. Effective Output Capacitance ––– 280 –––
Source-Drain Ratin
s and Characteristics
Parameter Min. T
p. Max. Units
ISContinuous Source Current ––– ––– 51
(Body Diode) A
ISM Pulsed Source Current ––– ––– 204
Bod
Diode
c
VSD Diode Forward Volta
e––––––1.3V
trr Reverse Recover
Time –––2132ns
Qrr Reverse Recover
Char
e ––– 16 24 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 5.0V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 31A, VGS = 0V
e
TJ = 25°C, IF = 31A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 31A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 0V, VDS = 0V to 44V
f
VGS = 5.0V
e
VDD = 50V
ID = 31A
RG = 7.5 Ω
VGS = 5.0V, ID = 30A
e
VGS = 4.5V, ID = 15A
e
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VDS = 25V, ID = 31A
ID = 31A
VDS = 44V
VGS = 16V
VGS = -16V