MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE FK10KM-9 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 w 2.6 0.2 1 2 3 VDSS ................................................................................ 450V rDS (ON) (MAX) .............................................................. 0.92 ID ......................................................................................... 10A Viso ................................................................................ 2000V Integrated Fast Recovery Diode (MAX.) ........150ns 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS Drain-source voltage VGS = 0V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation VDS = 0V IS ISM PD Tch Tstg Viso -- Channel temperature Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value Ratings Unit 450 30 V V 10 30 10 30 35 A A A A W -55 ~ +150 -55 ~ +150 2000 2.0 C C Vrms g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage ID = 1mA, VGS = 0V IG = 100A, VDS = 0V Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s Thermal resistance Reverse recovery time Unit Min. Typ. Max. 450 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 0.70 3.50 1 4 0.92 4.60 mA V V 3.3 -- -- -- 5.5 1100 130 20 -- -- -- -- S pF pF pF -- -- -- -- 20 30 95 35 -- -- -- -- ns ns ns ns -- 1.5 2.0 V -- -- -- -- 3.57 150 C/W ns PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 CASE TEMPERATURE TC (C) 200 101 7 5 3 2 100 7 5 3 2 tw=10s 100s 1ms 10ms TC = 25C Single Pulse 10-1 DC 7 5 0 1 2 10 2 3 5 7 10 2 3 5 7 10 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE DRAIN CURRENT ID (A) 20 TC = 25C Pulse Test 8 PD= 35W 6V 16 12 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V 10 5V 4 DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 35W 7V 8 5V 6 TC = 25C Pulse Test 4 2 4V 4V 0 0 10 20 30 40 0 50 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 32 24 ID = 15A 16 10A 8 5A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 VGS = 10V 20V 1.2 0.8 0.4 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 16 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25C VDS = 50V Pulse Test 12 8 4 0 TC = 25C Pulse Test 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 20 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25C Pulse Test 0 4 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = 10V Pulse Test TC=25C 3 2 75C 125C 100 7 5 3 2 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) Coss 102 7 5 3 2 Crss 101 Tch = 25C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 SWITCHING TIME (ns) 103 7 5 3 2 102 7 5 td(off) 3 2 tr td(on) tf GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE CURRENT IS (A) 16 VDS = 100V 200V 12 400V 8 4 101 7 5 5 7 101 2 3 DRAIN CURRENT ID (A) 40 0 5 7 100 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C ID = 10A 20 40 60 80 VGS = 0V Pulse Test 32 24 TC=125C 16 25C 75C 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10-1 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 101 10-1 20 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) Ciss GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) CAPACITANCE Ciss, Coss, Crss (pF) 2 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-9 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 CHANNEL TEMPERATURE Tch (C) 101 7 5 3 2 Irr 101 7 5 101 100 2 3 5 7 102 Tch = 25C Tch = 150C 7 5 2 3 5 7 103 SOURCE CURRENT dis/dt (-A/s) 102 7 5 Irr 3 2 101 101 7 5 trr Tch = 25C Tch = 150C 2 3 5 7 101 2 3 3 2 100 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 10A VGS = 0V 3 3 VDD = 250V 2 2 trr 3 2 3 2 3 2 100 150 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = -100A /s 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10-1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999