Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500m A SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54563FP is an eight-circuit output-sourcing Darlington
transistor array . The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
FEATURES
ÁHigh breakdown voltage (BV CEO ≥ 50V)
ÁHigh-current driving (Io(max) = –500mA)
ÁWith clamping diodes
Á
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
ÁW ide operating temperature range (Ta = –20 to +75°C)
ÁOutput current-sourcing type
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54563P and M54563FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. VS and GND are used commonly among the eight
circuits.
The inputs have resistance of 3kΩ, and voltage of up to 10V
is applicable. Output current is 500 mA maximum. Supply
voltage V S is 50V maximum.
The M54563FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
1.5K
7.2K 3K
3K
20K
V
S
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used. Unit : Ω
The eight circuits share the V
S
and GND.
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND
→O8
IN8→
V
S
GND
V
S
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
→O7
→O6
→O5
→O4
→O3
→O2
→O1
1NC
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
→O8
IN7→
IN8→
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
10 11
→O7
→O6
→O5
→O4
→O2
→O3
→O1
NC
NC : No connection
Package type 18P4G(P)
INPUT OUTPUT
INPUT OUTPUT
Package type 20P2N-A(FP)
Aug. 1999
min typ max
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500m A SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
µA
mA
V
µA
—
—
—
—
—
—
—
—
IS (leak) #
IS
VF
IR #
—
—
—
0
2.4
0
VS
VIH
VIL
–0.5 ~ +50
50
–0.5 ~ +10
–500
–500
50
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
VCEO #
VS
VI
IO
IF
VR #
Pd
Topr
Tstg
V
V
V
mA
mA
V
W
°C
°C
V
V
V
50
10
0.2
Parameter Limits
Symbol Unit
IO0
0
—
—
–350
–100 mA
V
mA
VCE (sat)
II
100
2.4
2.0
1.0
5.0
15.0
–2.4
100
VS = 50V, VI = 0.2V
VS = 10V, VI = 2.4V, IO = –350mA
VS = 10V, VI = 2.4V, IO = –100mA
VI = 3V
VI = 10V
VS = 50V, VI = 3V (all input)
IF = –350mA
VR = 50V
Symbol UnitParameter Test conditions Limits
min typ+max
—
1.6
1.45
0.6
2.9
5.6
–1.2
—
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Ratings UnitSymbol Parameter Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
# : Unused I/O pins must be connected to GND.
Supply voltage Duty Cycle
P : no more than 8%
FP : no more than 5%
Duty Cycle
P : no more than 55%
FP : no more than 30%
Output current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
Supply leak current
Supply current
Clamping diode forward voltage
Clamping diode reverse current
Collector-emitter saturation voltage
Input current
ns
ns
ton
toff
—
—100
4800 —
—
Symbol UnitParameter Test conditions Limits
min typ max
Turn-on time
Turn-off time CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Aug. 1999
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500m A SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
PG
50ΩC
L
R
L
V
S
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
I
= 0 to 2.4V
(2) Input-output conditions : R
L
= 30Ω, V
S
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Measured device
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54563FP
M54563P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Output Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
–200
–100
–300
–400
–500
00.5 1.0 1.5 2.0 2.5
Output current I
O
(mA)
V
S
= 10V
V
I
= 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Duty-Cycle-Output Current Characteristics
(M54563P)
Duty cycle (%)
➁
➂
➀
➃
➄➅
➆➇
Output current I
O
(mA)
0
–200
–100
–300
–400
–500
020 40 60 80 100
➄
➆➇
➅
Duty cycle (%)
➀
➁
➂➃
Output current I
O
(mA)
Duty-Cycle-Output Current Characteristics
(M54563P)
0
–200
–100
–300
–400
–500
020 40 60 80 100
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500m A SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Output Current Characteristics
(M54563FP)
Duty cycle (%)
➁
➂
➀
➃
➄➅
➆➇
Output current IO (mA)
0
–200
–100
–300
–400
–500
020 40 60 80 100
➄
➆➇
➅
Duty cycle (%)
➀
➁
➂➃
Output current IO (mA)
Duty-Cycle-Output Current Characteristics
(M54563FP)
0
–200
–100
–300
–400
–500
020 40 60 80 100
0
Ta = 75°C
Ta = 25°C
Ta = –20°C
–200
–100
–300
–400
–500
00.2 0.4 0.6 0.8 1.0
V
S
= 20V
V
S
-V
O
= 4V
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
Output current IO (mA)
Ta = 75°C
Ta = 25°C
Ta = –20°C
Clamping Diode Characteristics
Forward bias voltage VF (V)
0
100
200
300
500
400
00.5 1.0 1.5 2.0
Forward bias current IF (mA)
Input Characteristics
Input voltage VI (V)
0
Ta = 75°C
Ta = 25°C
Ta = –20°C
2
1
3
4
5
0246810
Input current II (mA)
V
S
= 20V
Input Characteristics
Input voltage VI (V)
0
Ta = 75°C
Ta = 25°C
Ta = –20°C
0.4
0.2
0.6
0.8
1.0
012345
Input current II (mA)
V
S
= 20V
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
