UPA862TD
NEC's NPN SILICON RF
TWIN TRANSISTOR
PART NUMBER UPA862TD
PACKAGE OUTLINE TD
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 nA 100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100
hFE DC Current Gain1 at VCE = 3 V, IC = 10 mA 75 110 150
fTGain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 10 12
Cre Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7
|S21E|2Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz dB 7 8.5
NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 2.5
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 nA 600
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 600
hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 100 120 145
fTGain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz GHz 5.0 6.5
Cre Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.6 0.8
|S21E|2Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz dB 3.0 4.0
|S21|S21E|2E|2Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz dB 4.5 5.5
NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz dB 1.9 2.5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
Q1
Q2
• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:
Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR 1-2 GHz OSCILLATORS
FEATURES OUTLINE DIMENSIONS (Units in mm)
Package Outline TD
(TOP VIEW)
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
California Eastern Laboratories
vY
C1
Q2
Q1
B2
E2
E1
B1
C2
(Top View)
0.5±0.05
0.125 +0.1
-0.05
1
2
3
0.4 0.4
0.8
0.15±0.05
456
1.0±0.05
0.8+0.07
-0.05
1
34
5
6
2
1.2 +0.07
-0.05
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
SYMBOLS PARAMETERS UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage V
VCEO Collector to Emitter Voltage V
VEBO Emitter to Base Voltage V
ICCollector Current mA
PTTotal Power Dissipation1mW
TJJunction Temperature °C
TSTG Storage Temperature °C
9 9
6 5.5
2 1.5
30 100
180 192
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
UPA862TD
210 Total
150 150
-65 to +150
ORDERING INFORMATION
PART NUMBER QUANTITY PACKAGING
UPA862TD-T3-A 10K Pcs./Reel Tape & Reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Ambient Temperature, TA (°C)
Total Power Dissipation, P
tot
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector to Base Voltage, VCB (V)
Reverse Transfer Capacitance, C
re
(pF)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, VCB (V)
Reverse Transfer Capacitance, C
re
(pF)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
300
250
200
190
180
150
100
50
0
25 50 75 100 125 150
210
Q2
Q1
2 Elements in total
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm (t) )
0.5
0.4
0.3
0.2
0.1
0
246810
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0
246810
f = 1 MHz
Q1 Q2
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 Q2
Base to Emitter Voltage, VBE (V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, VCE (V)
VCE = 1 V
100
10
1
0.1
0.01
0.001
0.00010.4 0.5 0.6 0.7 0.8 0.9 1.0
V
CE
= 1 V
100
10
1
0.1
0.01
0.001
0.00010.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, VBE (V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, VBE (V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
10
1
0.1
0.01
0.001
0.00010.4 0.5 0.6 0.7 0.8 0.9 1.0
V
CE
= 2 V
100
10
1
0.1
0.01
0.001
0.00010.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, VCE (V)
300 µa
270 µa
240 µa
I
B
= 30 µa
60 µa
90 µa
120 µa
150 µa
180 µa
240 µa
40
30
20
10
012345678
400 µa
360 µa
320 µa
I
B
= 40 µa
80 µa
120 µa
160 µa
200 µa
240 µa
280 µa
40
30
20
10
012345678
50
60
UPA862TD
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 Q2
DC Current Gain, H
FE
Collector Current, IC (mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
V
CE
= 1 V
1000
10
100
0.1 1 10 100
DC Current Gain, H
FE
Collector Current, IC (mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, IC (mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, IC (mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
V
CE
= 1 V
1000
10
100
0.1 1 10 100
V
CE
= 2 V
1000
10
100
0.1 1 10 100
V
CE
= 2 V
1000
10
100
0.1 1 10 100
Gain Bandwidth Product, f
T
(GHz)
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
14
2
6
0.1 1 10 100
12
10
8
4
0
VCE = 2 V
f = 2 GHz
2
6
110 100
10
8
4
0
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 Q2
VCE = 1 V
IC = 10 mA
35
5
15
0.1 110
30
25
20
10
0
|S21e|
2
MAG
MSG
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
VCE = 1 V
IC = 5 mA
35
5
15
0.1 110
30
25
20
10
0
|S21e|
2
MAG
MSG
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
VCE = 2 V
IC = 10 mA
35
5
15
0.1 110
30
25
20
10
0
|S21e|
2
MAG
MSG
VCE = 1 V
IC = 15 mA
35
5
15
0.1 110
30
25
20
10
0
|S21e|
2
MAG
MSG
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
VCE = 3 V
IC = 10 mA
35
5
15
0.1 110
30
25
20
10
0
|S21e|
2
MAG
MSG
VCE = 2 V
IC = 5 mA
35
5
15
0.1 110
30
25
20
10
0
|S21e|
2
MAG
MSG
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 Q2
UPA862TD
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
VCE = 1 V
f = 1 GHz
5
15
100110
25
20
10
0
|S21e|
2
MAG
MSG
VCE = 1 V
f = 1 GHz
5
15
100110
20
10
0
|S21e|
2
MAG
MSG
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
VCE = 1 V
f = 2 GHz
5
15
100110
25
20
10
0
MAG
MSG
|S21e|
2
V
CE
= 1 V
f = 2 GHz
0
10
100110
15
5
-5
MAG
|S
21e
|2
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
VCE = 2 V
f = 2 GHz
5
15
100110
25
20
10
0
|S21e|
2
MAG
MSG
V
CE
= 2 V
f = 2 GHz
5
15
100110
-5
10
0
MAG
|S
21e
|
2
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 Q2
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, G
a
(dB)
Collector Current, IC (mA) Collector Current, IC (mA)
Associated Gain, G
a
(dB)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1 GHz
2
6
100110
10
8
4
0
NF
G
a
4
12
20
16
8
0
V
CE
= 1 V
f = 1 GHz
2
4
100110
6
5
3
0
NF
G
a
6
3
12
18
15
9
0
1
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, G
a
(dB)
Collector Current, IC (mA) Collector Current, IC (mA)
Associated Gain, G
a
(dB)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
2
6
100110
10
8
4
0
NF
Ga
4
12
20
16
8
0
V
CE
= 1 V
f = 2 GHz
2
4
1001
1
10
6
5
3
0
NF 6
3
12
18
15
9
0
G
a
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, G
a
(dB)
Collector Current, IC (mA) Collector Current, IC (mA)
Associated Gain, G
a
(dB)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
2
6
100110
10
8
4
0
NF
Ga
4
12
20
16
8
0
VCE = 2 V
f = 2 GHz
2
4
1001
1
10
6
5
3
0
NF 6
3
12
18
15
9
0
Ga
UPA82TD (Q1)
VCE = 2.5V, IC = 10 mA
Frequency S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 0.726 - 18.1 20.331 161.8 0.013 80.9 0.937 - 11.7 0.21 31.83
0.20 0.667 - 37.4 18.720 148.4 0.024 71.4 0.863 - 21.2 0.30 28.89
0.30 0.594 - 53.3 16.706 136.9 0.033 66.5 0.774 - 28.1 0.39 27.06
0.40 0.521 - 66.9 14.756 127.5 0.040 62.4 0.691 - 33.1 0.50 25.69
0.50 0.459 - 78.6 13.006 120.0 0.045 60.6 0.623 - 36.3 0.58 24.56
0.60 0.408 - 89.0 11.512 113.9 0.050 59.4 0.565 - 38.6 0.66 23.59
0.70 0.366 - 98.3 10.269 108.8 0.055 59.1 0.517 - 40.0 0.73 22.70
0.80 0.334 -107.2 9.233 104.4 0.060 58.9 0.477 - 41.0 0.79 21.91
0.90 0.310 -115.8 8.382 100.7 0.064 59.0 0.446 - 41.9 0.84 21.18
1.00 0.292 -123.8 7.661 97.4 0.068 59.3 0.419 - 42.5 0.88 20.50
1.10 0.282 -131.2 7.052 94.4 0.073 59.4 0.399 - 43.3 0.92 19.86
1.20 0.273 -138.6 6.529 91.7 0.077 59.5 0.379 - 44.0 0.95 19.28
1.30 0.268 -145.2 6.079 89.2 0.082 59.7 0.363 - 45.1 0.97 18.71
1.40 0.266 -151.1 5.681 86.8 0.086 59.7 0.348 - 46.2 0.99 18.18
1.50 0.264 -156.7 5.329 84.6 0.091 59.8 0.335 - 47.6 1.01 17.15
1.60 0.264 -161.9 5.015 82.5 0.095 59.8 0.322 - 48.7 1.03 16.18
1.70 0.265 -166.7 4.736 80.5 0.100 59.7 0.310 - 50.1 1.04 15.48
1.80 0.267 -171.4 4.488 78.7 0.104 59.6 0.299 - 51.5 1.06 14.87
1.90 0.270 -175.6 4.266 76.8 0.109 59.5 0.290 - 53.0 1.07 14.33
2.00 0.276 -179.4 4.060 75.0 0.113 59.5 0.282 - 54.6 1.08 13.84
2.10 0.282 177.1 3.878 73.3 0.118 59.2 0.274 - 56.5 1.09 13.40
2.20 0.288 174.1 3.704 71.6 0.122 59.1 0.269 - 58.7 1.09 12.97
2.30 0.295 171.4 3.556 70.0 0.127 58.8 0.264 - 60.7 1.09 12.61
2.40 0.301 168.9 3.414 68.5 0.131 58.5 0.259 - 63.0 1.10 12.24
2.50 0.307 166.8 3.283 66.9 0.136 58.1 0.256 - 65.2 1.10 11.90
2.60 0.312 165.1 3.159 65.5 0.140 58.0 0.251 - 67.5 1.11 11.55
2.70 0.316 163.4 3.049 64.1 0.144 57.8 0.248 - 69.6 1.11 11.23
2.80 0.321 161.9 2.943 62.7 0.148 57.4 0.245 - 71.6 1.12 10.91
2.90 0.325 160.2 2.848 61.3 0.153 57.1 0.243 - 73.2 1.12 10.62
3.00 0.329 158.9 2.759 60.0 0.157 56.7 0.242 - 75.0 1.12 10.35
Coordinates in Ohms
Frequency in GHz
VCE = 2.5 V, IC = 10 mA
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
TYPICAL SCATTERING PARAMETERS
0.100 to 3.000GHz by 0.050
-j100
S
22 = 1
S
11 = 1
10
j10
-j10
250
j25
-j25
50
j50
-j50
100
j100
S
12
= .2
S
21
= 10
-150°
-120°
-90°
-60°
-30°
+0°
+30°
+60°
+90°
+120°
+150°
+180°
0.100 to 3.000GHz by 0.050
UPA862TD
TYPICAL SCATTERING PARAMETERS
UPA862TD (Q2)
VCE = 1 V, IC = 10 mA
Frequency S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 0.692 - 58.7 20.972 144.3 0.028 61.7 0.800 - 29.7 0.22 28.79
0.20 0.653 -100.9 16.060 123.6 0.041 48.9 0.599 - 46.0 0.31 25.88
0.30 0.634 -124.2 12.209 111.1 0.048 44.0 0.465 - 53.6 0.43 24.04
0.40 0.622 -139.2 9.673 102.9 0.053 42.6 0.382 - 58.0 0.54 22.64
0.50 0.616 -149.4 7.951 96.9 0.056 42.9 0.329 - 60.7 0.65 21.52
0.60 0.611 -157.1 6.721 92.2 0.059 44.5 0.291 - 63.0 0.74 20.54
0.70 0.609 -163.3 5.816 88.1 0.063 46.1 0.264 - 64.7 0.82 19.66
0.80 0.609 -168.2 5.118 84.6 0.067 47.9 0.243 - 66.7 0.89 18.86
0.90 0.614 -172.5 4.573 81.4 0.070 49.8 0.229 - 68.7 0.94 18.13
1.00 0.618 -176.2 4.134 78.5 0.074 51.6 0.218 - 71.1 0.98 17.46
1.10 0.625 -179.4 3.774 75.7 0.078 53.1 0.212 - 73.6 1.01 16.31
1.20 0.630 177.6 3.469 73.1 0.083 54.8 0.206 - 76.7 1.03 15.12
1.30 0.634 175.0 3.210 70.5 0.088 56.0 0.204 - 80.0 1.05 14.29
1.40 0.638 172.6 2.984 68.1 0.092 57.2 0.202 - 83.6 1.07 13.53
1.50 0.641 170.5 2.788 65.8 0.097 58.2 0.203 - 87.5 1.08 12.83
1.60 0.644 168.4 2.615 63.6 0.102 59.3 0.203 - 91.2 1.10 12.21
1.70 0.647 166.5 2.462 61.4 0.107 60.3 0.204 - 95.2 1.11 11.65
1.80 0.652 164.5 2.327 59.3 0.112 61.1 0.207 - 99.0 1.11 11.16
1.90 0.657 162.8 2.207 57.3 0.118 61.8 0.211 -102.7 1.11 10.75
2.00 0.663 161.1 2.098 55.3 0.123 62.4 0.216 -106.1 1.10 10.42
2.10 0.670 159.5 2.000 53.4 0.129 62.9 0.222 -109.6 1.09 10.11
2.20 0.676 158.1 1.908 51.4 0.134 63.3 0.230 -112.7 1.08 9.85
2.30 0.683 156.8 1.827 49.6 0.140 63.7 0.239 -115.9 1.06 9.63
2.40 0.687 155.5 1.750 47.8 0.146 63.9 0.248 -119.0 1.05 9.39
2.50 0.692 154.5 1.679 46.1 0.152 64.2 0.258 -121.9 1.04 9.16
2.60 0.695 153.5 1.612 44.5 0.158 64.3 0.267 -124.6 1.03 8.95
2.70 0.698 152.6 1.554 42.9 0.165 64.5 0.277 -127.2 1.03 8.74
2.80 0.702 151.8 1.498 41.4 0.171 64.7 0.286 -129.7 1.02 8.62
2.90 0.706 150.8 1.448 40.0 0.178 64.7 0.294 -131.9 1.00 8.69
3.00 0.710 150.0 1.401 38.6 0.184 64.7 0.303 -133.8 0.99 8.81
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 10 mA
0.100 to 3.000GHz by 0.050
-j100
S
22 = 1
S
11 = 1
10
j10
-j10
250
j25
-j25
50
j50
-j50
100
j100
S12 = .2
S21 = 10
-150°
-120°
-90°
-60°
-30°
+0°
+30°
+60°
+90°
+120°
+150°
+180°
0.100 to 3.000GHz by 0.050
UPA862TD
UPA862TD NONLINEAR MODEL
UPA862TD
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE =0.5 V to 2.5 V, IC = 1 mA to 20 mA
Date: 08/03
(1) Gummel-Poon Model
(2) AF and KF are 1/f noise parameters and are bias dependant.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
Parameters Q1 Q2 Parameters Q1 Q2
NE685 NE851 NE685 NE851
IS 7.0e-16 137e-18 MJC 0.34 0.14
BF 109 166 XCJC 0.5 0.5
NF 1 0.9871 CJS 0 0
VAF 15 20.4 VJS 0.75 0.75
IKF 0.19 50 MJS 0 0
ISE 7.90e-13 80.4e-15 FC 0.1 0.55
NE 2.19 2.4 TF 2.0e-12 18e-12
BR 1 28.7 XTF 6 0.1
NR 1.08 0.9889 VTF 3 2
VAR 12.4 2.7 ITF 0.005 0.03
IKR infinity 0.021 PTF 0 0
ISC 0 532e-18 TR 1.0e-9 1.0e-9
NC 2 1.28 EG 1.11 1.11
RE 1.3 0.45 XTB 0 0
RB 5 4 XTI 3 3
RBM 3 1 KF (2) 0 0
IRB 0.005 0 AF (2) 1 1
RC 10 1.7
CJE 0.4e-12 2.4e-12
VJE 0.81 0.87
MJE 0.5 0.34
CJC 0.18e-12 0.65e-12
VJC 0.75 0.52
BJT NONLINEAR MODEL PARAMETERS(1)
IC = 5 mA IC =10 mA IC = 15 mA
KF 54.38e-12 997.6e-12 500.2e-12
AF 2.071 2.375 2.288
Q1
IC = 5 mA IC =10 mA IC = 15 mA
KF 4.547e-15 855e-12 1.73e-9
AF 1.4 2.551 2.626
Q2
For a better understanding on AF and KF parameters, please refer to AN1026.
UPA862TD
SCHEMATIC
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE = 0.5 V to 2.5 V, IC = 1 mA to 20 mA
Date: 08/03
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
Pin_1
Pin_2
Pin_3
Pin_4
Pin_5
Pin_6
0.1 pF
CCEPKG2
CCBPKG2
0.5 nH
0.07 pF
CCB2
0.01 pF
CCE1
0.28 pF
0.6 nH
1.1 nH 0.01 nH
0.6 nH
Q1
CCBPKG1
CCB1
LE1
LB1 LB
0.01 nH
LE
0.01 nH
LB
C_B2E2
0.01 pF
C_B1B2
0.01 pF
LE2
LB2
C_C1B2
0.03 pF
LC
0.01 nH 1.2 nH
LC
0.01 nH
LE
0.01 nH
C_E1C2
C_C1E1
0.05 pF
0.05 pF
C_E1B2
0.1 pF
0.03 pF
0.1 pF
CCE2
Q2
0.25 pF
LC1
0.8 nH
LC2
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
08/04/2003
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
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standards, please do not hesitate to contact your local representative.
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