in 2 Power MOSFETS \ 3 i Kg fl a , TO-220AB DMOS /] = Z V, yy 2 N Channel N Channel oF + c S n o (Notts) Tos(on) @ Ip/Ves lp Py (Vatts) Fps(on) @ In/Ves lp Py co Min Device (mo) tam (Amps) | (Watts) Min Device (ma) (Amps) | (Watts) oO Max ps/Volts)| Max | Max Max | Amps/Volts)) Max | Max ra 100 | NDP710A 38 21/10 42 150 60 | NDP706A 15 40/10 75 150 o NDP? 10AE NDP706AE a NDP710B 42 21/10 40 NDP706B 18 35/10 70 NDP710BE NDP7O6BE a NDP610A 65 13/10 26 100 NDP606A 25 24/10 48 100 a NDP610AE NDP606AE . NDP610B 80 12/10 24 NDP606B 28 21/10 42 a NDP610BE NDP6O8BE = NDP510A 120 7.5/10 15 60 NDP506A 50 13/10 26 60 NDP510AE NDP506AE ta NDP510B 150 6.5/10 13 NDPS06B 60 12/10 24 F NDP510BE NDP506BE & NDP410A 250 4/10 8 40 NDP406A 100 7.5/10 15 40 i NDP410AE NDP406AE n NDP4108 300 3.5/10 7 NDP406B 150 6/10 12 ~ NDP410BE NDP406BE S$ 80 | NOP708A 22 31/10 60 150 MTP3055E & NDP708AE 50 | NDP705A 15 40/10 75 150 ha NDP708B 25 27/10 52 NDP705AE 5 NDP708BE NDP7058 18 35/10 70 NDP608A 42 18/10 36 100 NDP705BE 2 NDP608AE NDP605A 25 24/10 48 100 = NDP608B 45 16/10 32 NDP605AE NDP608BE NDP605B 28 21/10 42 NDP508A 80 9.5/10 19 60 NDP605BE NDP508AE NDP505A 50 13/10 26 60 NDP508B 100 8.5/10 17 NDP505AE NDP508BE NDP505B 60 12/10 24 NDP408A 160 5.5/10 11 40 NDP505BE NDP408AE NDP405A 100 7.5/10 15 40 NDP408B 200 5/10 10 NDP405AE NDP408BE NDP405B 150 6/10 12 NDP405BE NATIONAL SEMICONDUCTOR DISCRETE DEVICES CATALOG 2-1