1
2
3
V
V
V
1
2
3
General Purpose Transistor
PNP Silicon
Lead(Pb)-Free
P b
BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
SOT-323(SC-70)
EMITTER
BASE
COLLECTOR
Device Marking
BC856AW=3A; BC856BW=3B; BC857AW=3E;BC857BW=3F; BC858AW=3J; BC858BW;=3K; BC858CW=3L
1. FR-5 = 1.0 x 0.75 x 0.062 in.
MaximumRatings (TA=25°Cunless otherwise noted)
Collector-Emitter Voltage BC856
BC857
BC858
Collector-Base Voltage BC856
BC857
BC858
Collector Current-Continuous IC100
m
A
Emitter-Base Voltage BC856
BC857
BC858
Rating Symbol Value Unit
VEBO
VCBO
VCEO
-65
-45
-30
-5.0
-5.0
-5.0
-80
-50
-30
Junction Temperature Range
Storage Temperature Range Tstg -55 to +150
-55 to +150
TJ
°C/W
°C
°C
Total Device Dissipation FR-5 Board(1)
TA=25°C
Thermal Resistance, Junctionto Ambient(1) RθJA
PD
833
150 mW
http://www.weitron.com.tw
WEITRON 1/6 14-Jun-06
NF
- -
- -
--
4.5
V
V
V
-
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
http://www.weitron.com.tw
WEITRON 2/6 14-Jun-06
Unit
Characteristics Symbol Min MaxTyp
WEITRON
Electrical Characteristics(TA=25ºC Unless Otherwise noted)
Off Characteristics
On Characteristics
Small-signal Characteristics
Base-Emitter On Voltage
IC=-2.0mA, VCE=-5.0V
IC=-10mA, VCE=-5.0V
VBE(on)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC=-10mA
BC856 Series
BC857 Series
BC858 Series
-65
-45
-30
-80
-50
-30
-80
-50
-30
-5.0
-5.0
-5.0
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
nA
µA
-15
-4.0
Collector-Emitter Breakdown Voltage
IC=-10uA, VEB=0
Collector-Base Breakdown Voltage
IC=-10µA
Emitter-Base Breakdown Voltage
IE=-1.0µA
Collector Cutoff Current
VCB=-30V
VCB=-30V, TA=150°C
DC Current Gain
IC=-10µA, VCE=-5.0V
IC=-2.0mA,VCE=-5.0V)
BC856A,BC857A,BC858A
BC856B,BC857B,BC858B
BC858C
BC856A,BC857A,BC858A
BC856B,BC857B,BC858B
BC858C
hFE
90
150
270
180
290
520
-
-
-
125
220
420
-
-
-
250
450
800
VCE(sat)
VBE(sat)
-0.6
-
-0.3
-0.65
-0.75
-0.82
-
-
-
-
-
-
-
-
-
-
Base-Emitter Saturation Voltage
IC=-10mA, IB=-0.5mA
IC=-100mA IB=-5.0mA
-0.7
-0.9
Collector-Emitter Saturation Voltage
IC=-10mA, IB=-0.5mA
IC=-100mA,IB=-5.0mA
Current-Gain-Band width Product
IC=-10mA, VCE=-5.0V, f=100MHz fTMHz100
Output Capacitance
VCB=-10V,f=1.0MHz Cob
Noise Figure
IC=-0.2mA, VCE=-5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz 10 dB
pF
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I C , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
VCE= –10 V
T A = 25°C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
T A = 25°C
V BE(sat) @ I C /I B=10
V BE(on) @ V CE = –10 V
V CE(sat) @ I C /I B = 10
T A = 25°C
)S
T
L
OV(
EGA
T
LOV ,V
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
θθ
θθ
θBV )C°
/
V
m
( TN
EI
CIF
FE
OC
E
RU
TAR
EP
ME
T
,
1.0
1.2
1.6
2.0
2.4
2.8
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
VEC )V
(
E
GAT
L
OV
RE
T
TI
ME
–
R
O
TCE
L
L
OC ,
I C= –200 mA
–55°C to +125°C
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.2 –1.0 –10 –100–0.02 –0.1 –1.0 –10 –20
–2.0
–1.6
–1.2
–0.8
–0.4
0
IC =
–10 mA
I C= –100 mA
I C= –
20 mA
I C= –50 mA
hE
FNIA
G
T
N
ERRUC
C
D
DE
Z
ILA
M
RO
N
,
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
T A=25°C
V CE = –10V
T A = 25°C
f
T
HT
D
IWD
N
AB
–
N
I
AG
–
TN
ERRUC
,
)
z
HM( TC
U
D
O
R
P
)
Fp(EC
N
ATIC
AP
A
C
,C
Cob
Cib
400
300
200
150
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
BC857 / BC858
http://www.weitron.com.tw
WEITRON 3/6 14-Jun-06
WEITRON
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
VBE(sat) @ I C/I B=10
VBE @VCE= –5.0 V
T J= 25°C
V CE = –5.0V
T A = 25°C
VCE(sat) @ I C /I B= 10
VE
C
)STLO
V
( E
G
ATLO
V
R
E
T
T
IME
–R
OTCELL
O
C
,
θ
θ
θ
θ
θB
V)C
°/V
m
( T
N
EICI
FF
E
OC
E
RUTAR
E
P
M
E
T ,
)S
T
L
OV( E
GAT
L
O
V ,
V
I C =
–10mA
–100mA
–20mA–200mA
TJ= 25°C
θ VB for V BE
–55°C to 125°C
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–1.0
–0.8
–0.6
–0.4
–0.2
0
2.0
1.0
0.5
0.2
–2.0
–1.6
–1.2
–0.8
–0.4
0
–0.1–0.2 –1.0 –2.0 –5.0–10 –20 –50 –100–200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
hEF )D
E
ZI
L
AMR
ON
(
NIA
G
TNERRU
C
C
D
,
–50mA
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
)
Fp(
E
C
N
ATI
CAP
A
C
,C
f
T
T
T
C
U
DO
R
P
H
T
D
I
W
D
N
AB
–
N
I
A
G
–
T
N
ER
R
U
C
,
C ob
Cib
T J= 25°C
VCE= –5.0V
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
http://www.weitron.com.tw
WEITRON 4/6 14-Jun-06
WEITRON
BC856
BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
http://www.weitron.com.tw
WEITRON 5/6 14-Jun-06
WEITRON
t, TIME (ms)
Figure 13. Thermal Response
VCE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk)
<
150°C. T J(pk) may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
BC558
BC557
BC556
ZθJC (t) = r(t) R θJC
RθJC = 83.3°C/W MAX
ZθJA (t) = r(t) R θJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
TJ(pk) – T C = P (pk) RθJC (t)
IC
)
Am
( T
N
E
R
R
U
C RO
T
CELLO
C
,
L
A
M
R
E
H
T TNEISN
A
RT
,)t (r
)D
EZ
ILAMRON(
E
CN
AT
S
I
SE
R
DUTY CYCLE, D = t 1 /t 2
t 1
t2
P(pk)
SINGLE PULSE
SINGLE PULSE
TA= 25°C TJ= 25°C
3 ms1s
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D=0.5
0.2
0.10.05
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
–1.0 –0.5 –10 –30 –45 –65 –100
–200
–100
–50
–10
–5.0
–2.0
BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
http://www.weitron.com.tw
WEITRON 6/6 14-Jun-06
WEITRON
Unit:mm
SOT-323 Outline Demensions
A
B
D
EG
M
L
H
J
TOP VIEW
K
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
SOT-323
