© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C27A
IDM TC= 25°C, pulse width limited by TJM 108 A
IAR TC= 25°C27A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 3 00 °C
MdMounting torque TO-264 0.4/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1mA 800 V
VGS(th) VDS = VGS, ID = 4mA 2.0 4.5 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 100 µA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 320 mΩ
Note 1
DS98722A (12/02)
PLUS 247TM (IXFX)
GD (TAB)
G = Gate D = Drain
S = Source TAB = Drain
VDSS = 800 V
ID25 =27A
RDS(on) = 320 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
S
GD(TAB)
TO-264 AA (IXFK)
HiPerFETTM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
switching (UIS) rated
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
z Temperature and lighting controls
Advantages
zPLUS 247TM package for clip or spring
mounting
zSpace savings
zHigh power density
IXFK 27N80Q
IXFX 27N80Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 2 0 2 7 S
Ciss 7600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 750 pF
Crss 120 pF
td(on) 20 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns
td(off) RG = 1 Ω (External), 50 ns
tf13 ns
Qg(on) 170 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 47 nC
Qgd 65 nC
RthJC 0.26 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 27 A
ISM Repetitive; 108 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 1.3 µC
IRM 8A
IF = IS,-di/dt = 100 A/µs, VR = 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
IXFK 27N80Q
IXFX 27N80Q
