PD-96391A AUTOMOTIVE GRADE AUIRFZ44NS AUIRFZ44NL HEXFET(R) Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V RDS(on) max. G 17.5m ID S 49A D D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. S G G D2 Pak D S TO-262 AUIRFZ44NL AUIRFZ44NS G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS (Thermally Limited) EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Max. c h c Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Units 49 35 160 3.8 94 0.63 20 150 530 25 9.4 5.0 -55 to + 175 g c e A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. Max. Units --- --- 1.5 40 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/29/11 AUIRFZ44NS/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 55 --- --- V Conditions VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.058 --- V/C Reference to 25C, ID = 1mA RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage --- --- 17.5 2.0 --- 4.0 m V gfs IDSS Forward Transconductance 19 --- --- S VDS = 25V, ID = 25A Drain-to-Source Leakage Current --- --- 25 A VDS =55V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 VGS = 10V, ID = 25A f VDS = VGS, ID = 250A f VDS = 44V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge --- --- 63 Qgs Gate-to-Source Charge --- --- 14 Qgd Gate-to-Drain ("Miller") Charge --- --- 23 td(on) Turn-On Delay Time --- 12 --- VDD = 28V tr Rise Time --- 60 --- ID = 25A td(off) Turn-Off Delay Time --- 44 --- tf Fall Time --- 45 --- LD Internal Drain Inductance --- 4.5 --- --- 7.5 --- LS Internal Source Inductance Ciss Input Capacitance --- 1470 --- Coss Output Capacitance --- 360 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. ID = 25A nC VDS = 44V VGS = 10V,See Fig 6 and 13 ns RG = 12 VGS = 10V, See Fig.10 Between lead, nH f D 6mm (0.25in.) from package G and center of die contact VGS = 0V pF S VDS = 25V = 1.0MHz, See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c --- --- Units Conditions MOSFET symbol 49 A showing the integral reverse D G --- 160 VSD (Body Diode) Diode Forward Voltage --- --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V trr Reverse Recovery Time --- 63 95 Qrr Reverse Recovery Charge --- 170 260 ns nC TJ = 25C, IF = 25A di/dt = 100A/s ton Forward Turn-On Time f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 0.48mH, RG = 25, IAS = 25A. (See Figure 12) ISD 25A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . 2 www.irf.com AUIRFZ44NS/L Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-D2 PAK MSL1 3L-TO-262 N/A Machine Model Class M3(+/- 400V ) (per AEC-Q101-002) ESD Human Body Model Class H1B(+/- 1000V ) (per AEC-Q101-001) Charged Device Model RoHS Compliant Class C5(+/- 2000V ) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRFZ44NS/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP 100 4.5V 10 100 4.5V 10 20s PULSE WIDTH 25C TTJC==25C 1 0.1 1 A 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) TJ = 25C TJ = 175C 10 V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 4 10 A 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20s PULSE WIDTH TC = 175C 175C J= 10 A I D = 41A 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFZ44NS/L 2500 Ciss V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 2000 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V DS = 44V V DS = 28V 16 1500 12 Coss 1000 Crss 500 I D = 25A 0 1 10 100 A 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 A 70 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 100 TJ = 175C TJ = 25C 10 VGS = 0V 1 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 3.0 100 10s 100s 10 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 A 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFZ44NS/L 50 RD V DS V GS 40 D.U.T. ID , Drain Current (A) RG + -V DD 30 V GS Pulse Width 1 s Duty Factor 0.1 % 20 10 0 Fig 10a. Switching Time Test Circuit 25 50 75 100 125 150 TC , Case Temperature ( C) 175 VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V L VDS DRIVER D.U.T RG + - VDD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) AUIRFZ44NS/L 500 TOP BOTTOM 400 ID 10A 18A 25A 300 200 100 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) V(BR)DSS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp Current Regulator Same Type as D.U.T. I AS 50K Fig 12b. Unclamped Inductive Waveforms .2F 12V .3F D.U.T. + V - DS VGS 3mA QG VGS IG ID Current Sampling Resistors QGS QGD Fig 13b. Gate Charge Test Circuit VG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 7 AUIRFZ44NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period V[GS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs 8 www.irf.com AUIRFZ44NS/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUFZ44NS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFZ44NS/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUFZ44NL YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFZ44NS/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 11 AUIRFZ44NS/L Ordering Information Base part AUIRFZ44NL AUIRFZ44NS 12 Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRFZ44NL AUIRFZ44NS AUIRFZ44NSTRL AUIRFZ44NSTRR www.irf.com AUIRFZ44NS/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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