CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121221g CLA50E1200HB Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1300 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V I R/D reverse current, drain current VR/D = 1200 V TVJ = 25C 50 A VR/D = 1200 V TVJ = 125C 4 mA VT IT = forward voltage drop min. typ. TVJ = 25C 50 A I T = 100 A IT = TVJ = 125 C 50 A I T = 100 A I TAV average forward current TC = 125C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current It for power loss calculation only value for fusing CJ junction capacitance PGM max. gate power dissipation average gate power dissipation (di/dt) cr critical rate of rise of current V V 1.27 V 1.65 V T VJ = 150 C 50 A 79 A TVJ = 150 C 0.88 V 7.7 m 0.25 K/W K/W 0.25 TC = 25C 500 W t = 10 ms; (50 Hz), sine TVJ = 45C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 C 555 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 45C 2.12 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.04 kAs TVJ = 150 C 1.54 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C t P = 30 s T C = 150 C 1.48 kAs 25 t P = 300 s PGAV 1.32 1.60 TVJ = 150C; f = 50 Hz repetitive, IT = 150 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.3 A/s; IG = 0.3 A; VD = VDRM non-repet., I T = 50 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 150C VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 50 mA TVJ = -40 C 80 mA TVJ = 150 C 0.2 V 3 mA TVJ = 25 C 125 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time VR = 100 V; I T = 50 A; VD = VDRM TVJ = 150 C IG = 0.3 A; di G /dt = 0.3 A/s di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 200 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20121221g CLA50E1200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 150 C Weight 6 MD mounting torque FC mounting force with clip Product Marking Logo Part Number DateCode Assembly Code g 0.8 1.2 Nm 20 120 N Part number C L A 50 E 1200 HB abcdef = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-247AD (3) YYWWZ 000000 Assembly Line Ordering Standard Part Number CLA50E1200HB Similar Part CLA50E1200TC Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA50E1200HB Package TO-268AA (D3Pak) (2) * on die level Delivery Mode Tube Code No. 503748 Voltage class 1200 T VJ = 150C Thyristor V 0 max threshold voltage 0.88 V R 0 max slope resistance * 5.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20121221g CLA50E1200HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121221g CLA50E1200HB Thyristor 150 600 120 500 IT 90 ITSM 400 [A] 60 10000 TVJ = 45C 2 TVJ = 125C 2 [A s] TVJ = 125C 200 50 Hz, 80% VRRM 100 0.5 1000 TVJ = 125C TVJ = 25C 0 0.0 TVJ = 45C It [A] 300 30 VR = 0 V 1.0 1.5 2.0 2.5 0.01 100 0.1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150C 70 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 60 TVJ = 125C 100 dc = 1 0.5 0.4 0.33 0.17 0.08 50 tgd ITAVM [s] [A] 1 40 [V] 10 5: PGM = 1 W 6: PGM = 10 W lim. 1000 10000 10 typ. 1 10 0.1 100 30 20 4: PGAV = 0.5 W 10 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics 1 2 0 100 1000 0 40 IG [A] IG [mA] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current T 60 80 120 160 Tcase [C] Fig. 6 Max. forward current at case temperature 0.3 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 0.5 0.4 0.33 0.17 0.08 50 P(AV)40 [W]30 0.2 0.1 i Rthi (K/W) 1 0.075 2 0.17 3 0.057 4 0.158 5 0.0105 [K/W] 20 0.0 10 ti (s) 0.0011 0.0019 0.0115 0.12 0.5 0 0 10 20 30 IF(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 0.001 0.01 0.1 1 10 [s] Tamb [C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20121221g