IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 200V 14A 0.100W FEATURES * HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * HIGH PACKING DENSITIES SMD1 Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS Gate - Source Voltage 20V ID Continuous Drain Current (VGS = 0 , Tcase = 25C) 22A ID Continuous Drain Current (VGS = 0 , Tcase = 100C) 14A IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25C 88A Linear Derating Factor 100W 0.8W/C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC RqJ-PCB Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 500mJ 5.0V/ns -55 to 150C 300C 1.25C/W 3C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 190A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 IRF250SMD ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 1 Max. V / C VGS = 10V ID = 14A 0.100 VGS = 10V ID = 22A 0.105 VDS = VGS ID = 250mA 2 VDS 15V IDS = 14A 9 VGS = 0 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate - Source Leakage VGS = 20V 100 IGSS Reverse Gate - Source Leakage VGS = -20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 3500 Coss Output Capacitance VDS = 25V 700 Crss Reverse Transfer Capacitance f = 1MHz 110 Qg Total Gate Charge 1 Qgs Gate - Source Charge 1 ID = 22A 115 ID = 22A 8 22 VDS = 0.5BVDSS 30 60 Qgd Gate - Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time IS SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current nC nC 35 VDD = 100V 190 ID = 22A 170 RG = 2.35W ns 130 22 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = 22A Qrr Reverse Recovery Charge di / dt 100A/ms VDD 50V ton Forward Turn-On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 0.8 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 2.8 A 88 IS = 22A nA pF 55 VDS = 0.5BVDSS 1 W 4 gfs VGS = 10V Unit V 0.29 ID = 1mA 1 Typ. 200 Reference to 25C Static Drain - Source On-State Resistance VGS = 0 Min. TJ = 25C VGS = 0 TJ = 25C 1.9 V 950 ns 9.0 mC Negligible nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00