Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 700V
▼ Fast Switching Speed RDS(ON) 4.4Ω
▼ Simple Drive Requirement ID2.5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 2.3 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
Rating
700
RoHS-compliant Product
-55 to 150
AP03N70H/J-H
2.5
1.6
Storage Temperature Range
8
54.3
Linear Derating Factor 0.44
200812114
Parameter
2.5
Parameter
-55 to 150
31
1
+30
G
D
S
GDSTO-252(H)
GDSTO-251(J)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP03N70J) is available for low-profile
applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 700 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=1.6A - - 4.4 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=1.6A - 2 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+30V - - +100 nA
QgTotal Gate Charge3ID=1A - 12 20 nC
Qgs Gate-Source Charge VDS=480V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 4 - nC
td(on) Turn-on Delay Time3VDD=300V - 8.5 - ns
trRise Time ID=2.5A - 6 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 19 - ns
tfFall Time RD=120Ω-8-
ns
Ciss Input Capacitance VGS=0V - 590 950 pF
Coss Output Capacitance VDS=25V - 50 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF
RgGate Resistance f=1.0MHz - 3.4 5.1 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=2.5A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=2.5A, VGS=0V, - 407 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 2110 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=2.5A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP03N70H/J-H
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP03N70H/J-H
0.0
1.0
2.0
3.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=2.5A
VG=10V
0.8
0.9
1.0
1.1
1.2
-50 0 50 100 150
T j , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
4
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
VG=4.0V
10V
6.0V
5.0V
4.5V
0
1
1
2
2
3
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.5V
10V
5.0V
4.5V
4.0V
0.01
0.1
1
10
100
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 25oC
Tj = 150oC
0.4
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( o C)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP03N70H/J-H
0
4
8
12
16
0 5 10 15
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=1A
VDS =480V
1
100
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.01
0.1
1
10
1 10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
ID (A)
100us
1ms
10ms
100ms
DC
Tc=25 oC
S
in
g
le Puls
e
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number
Package Code
03N70H
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
E 6.70 7.00 7.30
E1 5.40 5.80 6.20
e---- 2.30 ----
F 5.88 6.84 7.80
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
03N70J
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
LOGO
6
