Bulletin I27503 08/97 MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Power Modules 55 A 90 A 110 A Outstanding number of power encapsulated components Excellent power volume ratio 4000 VRMS isolating voltage UL E78996 approved Description A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. Major Ratings and Characteristics Parameters IO 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units 51MT.KB 91MT.KB 111MT.KB 55 @ TC 90 110 A 85 85 85 C IFSM @ 50Hz 390 950 1130 A @ 60Hz 410 1000 1180 A @ 50Hz 770 4525 6380 A2s @ 60Hz 700 4130 5830 A2 s 7700 45250 63800 A2s 2 I t I2t VRRM range 800 to 1600 V TSTG range - 40 to 125 C TJ - 40 to 125 C range www.irf.com 1 53-93-113MT..KB Series Bulletin I27503 08/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VRRM, maximum VRSM, maximum Code repetitive peak reverse voltage V non-repetitive peak reverse voltage V peak off-state voltage gate open circuit V VDRM, max. repetitive IRRM/IDRM max. 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 80 800 900 800 93/92/91MT..KB 100 1000 1100 1000 113/112/111MT..KB 120 1200 1300 1200 140 160 1400 1600 1500 1700 1400 1600 53/52/51MT..KB @ TJ = 125C mA 10 20 Forward Conduction Parameter IO ITSM I2t I2 t 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB Maximum DC output current 55 90 110 A @ Case temperature 85 85 85 C Maximum peak, one-cycle 390 950 1130 A forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied on state surge current 330 800 950 t = 10ms 100% V RRM Maximum I2t for fusing Maximum I2t for fusing VT(TO)1 Low level value of threshold 120 Rect conduction angle t = 10ms No voltage 345 840 1000 770 4525 6380 700 4130 5830 t = 8.3ms reapplied 540 3200 4510 t = 10ms 100% V RRM t = 8.3ms reapplied A2 s 500 2920 4120 7700 45250 63800 A 2s 1.17 1.09 1.04 V 1.45 1.27 1.27 12.40 4.10 3.93 11.04 3.59 3.37 2.68 1.65 1.57 t = 8.3ms reapplied t = 10ms No voltage Initial TJ = TJ max. t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. voltage VT(TO)2 High level value of threshold (I > x I T(AV)), @ T J max. voltage rt1 Low level value on-state m (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. slope resistance rt2 High level value on-state (I > x I T(AV)), @ T J max. slope resistance VTM Maximum on-state voltage drop di/dt Max. non-repetitive rate V Ipk = 150A, TJ = 25C tp = 400s single junction 150 A/s IH Max. holding current 200 TJ = 25o C, anode supply = 6V, mA IL 2 Max. latching current TJ = 25oC, from 0.67 VDRM , ITM = x I T(AV), Ig = 500mA, tr < 0.5 s, tp > 6 s of rise of turned on current 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load www.irf.com 53-93-113MT..KB Series Bulletin I27503 08/97 Blocking 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB Parameter VINS RMS isolation voltage 4000 V 500 V/s TJ = 25 oC all terminal shorted f = 50Hz, t = 1s dv/dt Max. critical rate of rise of off-state voltage (*) TJ = TJ max., linear to 0.67 VDRM, gate open circuit (*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90. Triggering 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB Parameter PGM Max. peak gate power 10 PG(AV) Max. average gate power W T J = TJ max. 2.5 IGM Max. peak gate current 2.5 A -VGT Max. peak negative 10 V Max. required DC gate 4.0 V voltage to trigger 2.5 T J = 25C 1.7 T J = 125C gate voltage VGT IGT Max. required DC gate 270 current to trigger 150 Max. gate voltage Anode supply = 6V, resistive load T J = - 40C mA T J = 25C Anode supply = 6V, resistive load T J = 125C 80 VGD T J = - 40C 0.25 V 6 mA @ TJ = TJ max., rated VDRM applied that will not trigger IGD Max. gate current that will not trigger Thermal and Mechanical Specifications 53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB Parameter TJ Max. junction operating -40 to 125 C -40 to 125 C temperature range Tstg Max. storage temperature range RthJC Max. thermal resistance, 0.18 0.14 0.12 junction to case 1.07 0.86 0.70 0.19 0.15 0.12 120 Rect condunction angle per module 1.17 0.91 0.74 120 Rect condunction angle per junction RthCS Max. thermal resistance, T wt DC operation per module DC operation per junction K/W Per module case to heatsink Mounting surface smooth, flat an greased Mounting to heatsink 4 to 6 Nm torque 10% to terminal 3 to 4 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Approximate weight www.irf.com 0.03 K/W 225 g 3 53-93-113MT..KB Series Bulletin I27503 08/97 R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction @ TJ max. Devices Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o 53/52/51MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 93/92/91MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 113/112/111MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 Units K/W Ordering Information Table Device Code 1 - 11 3 MT 160 1 2 3 4 K B S90 5 6 Current rating code: 5 = 55 A (Avg) 9 = 90 A (Avg) 11 = 110 A (Avg) 2 - Circuit configuration code: 3 = Full-controlled bridge 2 = Positive half-controlled bridge 1 = Negative half-controlled bridge 3 - Essential part number 4 - Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) 5 - Generation II 6 - Critical dv/dt: None = 500V/s (Standard value) S90 full-controlled bridge (53, 93, 113MT..KB) = 1000V/s (Special selection) positive half-controlled bridge (52, 92, 112MT..KB) negative half-controlled bridge (51, 91, 111MT..KB) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com 53-93-113MT..KB Series Bulletin I27503 08/97 Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches) www.irf.com 5 53-93-113MT..KB Series 130 1000 53MT..KB Series 120 120 (Rect) 110 TJ = 25C Instantaneous On-state Current (A) Maximum Allowable Case Temperature (C) Bulletin I27503 08/97 100 90 TJ = 125C 100 10 53MT..KB Series Per Junction 80 1 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 Total Output Current (A) Instantaneous On-state Voltage (V) Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics 220 K/ W 0. 7K /W 120 R elta -D Maximum Total Power Loss (W) 140 K/W .05 =0 A R thS /W 2K 0.1 /W 2K 0. W K/ 120 (Rect) /W K 0. 5 160 4 0. 180 3 0. 53MT..KB Series TJ = 125C 200 1K /W 100 80 1.5 K/W 60 40 20 0 0 0 5 10 15 20 25 30 35 40 45 50 55 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Total Output Current (A) Fig. 3 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 300 250 200 53MT..KB Series Per Junction 150 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current 6 400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 350 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated VRRM Reapplied 350 300 250 200 53MT..KB Series Per Junction 150 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current www.irf.com 53-93-113MT..KB Series 1000 130 93MT..KB Series Instantaneous On-state Current (A) Maximum Allowable Case Temperature (C) Bulletin I27503 08/97 120 120 (Rect) 110 100 90 100 TJ = 25C 93MT..KB Series Per Junction 80 0 20 40 60 80 TJ = 125C 10 1 0.5 100 1 1.5 2 2.5 3 3.5 4 Total Output Current (A) Instantaneous On-state Voltage (V) Fig. 6 - Current Ratings Characteristic Fig. 7 - Forward Voltage Drop Characteristics K/W .05 =0 aR elt -D 100 A 120 (Rect) 150 W K/ 200 R thS K/ W 0. 4K /W 0. 5 K/ W 0.7 K/W 1K /W W K/ 0. 3 12 0. 93MT..KB Series TJ = 125C 250 2 0. Maximum Total Power Loss (W) 300 1.5 K /W 50 0 0 10 20 30 40 50 60 70 80 Total Output Current (A) 0 90 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 8 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 800 750 700 650 600 550 500 93MT..KB Series Per Junction 450 400 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current www.irf.com 1000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 850 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 900 800 700 600 500 400 93MT..KB Series Per Junction 300 0.01 0.1 1 Pulse Train Duration (s) Fig. 10 - Maximum Non-Repetitive Surge Current 7 53-93-113MT..KB Series 1000 130 113MT..KB Series Instantaneous On-state Current (A) Maximum Allowable Case Temperature (C) Bulletin I27503 08/97 120 120 (Rect) 110 100 90 100 TJ = 25C 113MT..KB Series Per Junction 1 0.5 80 0 20 40 60 80 100 TJ = 125C 10 120 1 1.5 2 2.5 3 3.5 4 Total Output Current (A) Instantaneous On-state Voltage (V) Fig. 11 - Current Ratings Characteristic Fig. 12 - Forward Voltage Drop Characteristics K/W .05 =0 aR elt -D 100 A 150 W K/ 120 (Rect) 200 /W K 0. 3 K/ W 0.4 K/ W 0.5 K/W 0.7 K/W 1K /W 250 R thS 113MT..KB Series TJ = 125C 12 0. 300 2 0. Maximum Total Power Loss (W) 350 1.5 K /W 50 0 0 0 10 20 30 40 50 60 70 80 90 100110 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Total Output Current (A) Fig. 13 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C 900 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 800 700 600 500 113MT..KB Series Per Junction 400 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 8 1200 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRMReapplied 1100 1000 900 800 700 600 500 113MT..KB Series Per Junction 400 0.01 0.1 1 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com 53-93-113MT..KB Series Transient Thermal Impedance ZthJC (K/W) Bulletin I27503 08/97 10 Steady State Value RthJC = 1.07 K/W 1 53MT..KB Series RthJC = 0.86 K/W 93MT..KB Series RthJC = 0.70 K/W (DC Operation) 113MT..KB Series 0.1 0.01 Per Junction 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 16 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b) Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = 1 s, tp >= 6 s 10 (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = -40 C TJ = 125 C 1 TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 53/ 93/ 113MT..KB Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9