Mi RF Products = 4140 Commerce Drive ICTOSECTT)] sontgomeryvilte, PA 18936-1013 S$D1224-2 Tel: (215) 631-9840 RF & MICROWAVE TRANSISTORS 108...152MHz APPLICATIONS er Ree aCe sg a CLASS C TRANSISTOR a FREQUENCY 175MHz a VOLTAGE 28V a POWER OUT 40Ww aa =a POWER GAIN 7.60B _~ = a EFFICIENCY 60% a GOLD METALLIZATION .380 4LFL (M113) = COMMON EMITTER epoxy sealed ORDER CODE BRANDING $D1224-02 $D1224-2 PIN CONNECTION DESCRIPTION The $01224-2 is an epitaxial silicon NPN planar transistor designed primarily for 12.5V AM Class C eet RF amplifiers functional in the aviation band 118- 1 collector 3 base 136MHz and for 28V FM Class C RF amplifiers util- 2 emitter 4 emitter ized in ground station transmitters. It withstands extremely high VSWR under rated conditions. ABSOLUTE MAXIMUM RATINGS (T,~s, = 25C} | Symbol oo Parameter Value Unit Vero Collector - Base Voltage 65.0 WV Veeo | Collector - Emitter Voltage 35.0 Vv Vees | Collector - Emitter Voltage 65 Vv Vesa Emitter - Base Voltage 40 Vv Ic Collector Current 5.0 A Prot Total Power Dissipation 60.0 Ww Tsig Storage Temperature - 65 to + 150 c T, Junction Temperature + 200 C THERMAL DATA Rinti-ed | dunction-case Thermal Resistance 1 2g | CiW | March 1989 1/3 3D1224-2 ELECTRICAL CHARACTERISTICS (T,asq = 25C) STATIC Symbol Test Conditions value Unit Min. | Typ. | Max. BVeces | Ile = 200mA Vee =0 65.0 Vv / BVceo | Ic = 200mA lp =0 35.0 | v BVeno | le = 10mA le =O 4.0 Vv leao =| oa = 30,0 lp =0 1 mA Nee Voe = 5.0V le = 50OMA 5.0 DYNAMIC Symbol Test Conditions Yelus Unit Min, Typ. Max. Po f = 175MHz Voce = 28.0V 40.0 Ww Gp f = 175MHz Voce = 28.0V 7.6 dB Ne f = 175MHz Voce = 28V Py =40W 60 %e | Cog f = {MHz Vee = 30.0V Ip =0 65.0 | pF 2/3 260 PACKAGE MECHANICAL DATA $D1224-2 380 4LFL 42x 45 / Fr _ f gtr : Tir TEE 4 [iit iit] 4 I I S88801 224-242 Minimum Maximum Inches/mm Inches/mm A .220/5,59 230/584 B 785/19.94 Cc 720/18,29 .730/18.54 D 7024.64 980/24.89 E BB5/9.78 F .004/0.10 .006/0.15 G 085/2.16 105/2.67 H 160/406 180/4.57 I 280/7.11 J .240/6,10 .295/6,.48 avg 261