© 2005 IXYS All rights reserved
IXFA 12N50P
IXFP 12N50P
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGSM Transient ± 40 V
VGSM Continuous ± 30 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 20 A
IAR TC= 25°C12A
EAR TC= 25°C24mJ
EAS TC= 25°C 600 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 20 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220 4 g
TO-263 3 g
G = Gate D = Drain
S = Source TAB = Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 μA 500 V
VGS(th) VDS = VGS, ID = 1 mA 3.0 5.5 V
IGSS VGS = ± 30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 5μA
VGS = 0 V TJ = 125°C 150 μA
RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 500 mΩ
PolarHVTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA 12N50P
IXFP 12N50P
VDSS = 500 V
ID25 =12 A
RDS(on) ≤≤
≤≤
≤0.5 ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
DS99436(09/05)
Advance Technical Information
TO-220 (IXFP)
D(TAB)
G
S
TO-263 (IXFA)
GS
(TAB)
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 12N50P
IXFP 12N50P
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, Note 1 13 S
Ciss 1690 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 182 pF
Crss 16 pF
td(on) 22 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns
td(off) RG = 50 Ω (External) 65 ns
tf20 ns
Qg(on) 29 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 11 nC
Qgd 10 nC
RthJC 0.62 K/W
RthCK (TO-220) 0.25 KW
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 44 A
ISM Repetitive 132 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 22 A, -di/dt = 100 A/μs 200 ns
QRM VR = 100 V, VGS = 0 V 0.4 μC
IRM 4f A
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 (IXTA) Outline
Pins: 1 - Gate 2, 4 - Drain
3 - Source
© 2005 IXYS All rights reserved
IXFA 12N50P
IXFP 12N50P
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
3
6
9
12
15
18
21
24
27
30
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
024681012
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
01234567
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
Fig. 4. R
DS(on
) Normalized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 12A
I
D
= 6A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig . 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
0 3 6 9 12 15 18 21 24 27 30
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125
ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 12N50P
IXFP 12N50P
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crs
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 3 6 9 12 15 18 21 24 27 30
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 6A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
2
4
6
8
10
12
14
16
18
20
4.5 5 5.5 6 6.5 7 7.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
3
6
9
12
15
18
21
24
27
0 2 4 6 8 1012 14 1618 20
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
1
2
3
4
5
6
7
8
9
0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig . 12. Fo r w ar d-Bias
Safe Operating Area
0.1
1
10
100
10 100 1000
V
D S
- Volts
I
D
- Amperes
100μs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25μs
© 2005 IXYS All rights reserved
IXFA 12N50P
IXFP 12N50P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
R ( t h ) J C
- ºC / W
