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High Power Bipolar Transistor
Features:
• Collector-Emitter sustaining voltage -
VCEO(sus) = 60V (Min.) - TIP31A, TIP32A
= 100V (Min.) - TIP31C, TIP32C
• Collector-Emitter saturation voltage -
VCE(sat) = 1.2V (Max.) at IC = 3A
• Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA
Maximum Ratings
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance Junction to Case Rθjc 3.125 °C/W
Characteristic Symbol TIP31A
TIP32A
TIP31C
TIP32C Unit
Collector-Emitter Voltage VCEO 60 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current -Continuous
-Peak IC
3
5A
Base Current IB1
Total Power Dissipation at TC = 25°C
Derate above 25°C PD
40
0.32
W
W/°C
Operation and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
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High Power Bipolar Transistor
Electrical Characteristics (TC = 25°C unless otherwise noted)
(1) Pulse Test: Pulse width ≤300μs, Duty Cycle ≤2%
(2) fT = hFE • fTEST
Characteristic Symbol Min. Max. Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
IC = 30mA, IB = 0 TIP31A, TIP32A
TIP31C, TIP32C
VCEO(sus)
60
100 - V
Collector Cut off Current
VCE = 30V, IB = 0 TIP31A, TIP32A
VCE = 60V, IB = 0 TIP31C, TIP32C
ICEO - 0.3
mA
Collector Cut off Current
VCE = 60V, VEB = 0 TIP31A, TIP32A
VCE = 100V, VEB = 0 TIP31C, TIP32C
ICES - 0.2
Emitter Cut off Current
VEB = 5V, IC = 0 IEBO - 1
ON Characteristics (1)
DC Current Gain
IC = 1A, VCE = 4V
IC = 3A, VCE = 4V
hFE
25
10
-
50 -
Collector-Emitter Saturation Voltage
IC = 3A, IB = 375mA VCE(sat) - 1.2
V
Base-Emitter On Voltage
IC = 3A, VCE = 4V VBE(on) - 1.8
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
IC = 500mA, VCE = 10V, fTEST = 1MHz fT3 - MHz
Small Signal Current Gain
IC = 500mA, VCE = 10V, f = 1kHz hFE 20 - -
Figure - 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
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High Power Bipolar Transistor
RB and RC Varied to Obtain Desired Current Levels
Figure - 4 DC Current Gain
IC, Collector Current (Amp)
Figure - 2 Switching Time Equivalent Circuit Figure - 3 Turn-On Time
t, Time (µs)
Figure - 5 Turn-Off Time
IC, Collector Current (Amp)
t, Time (µs)
IC, Collector Current (Amp)
hFE, DC Current Gain
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High Power Bipolar Transistor
Figure - 7 Collector Saturation Region
IC, Collector Current (Amp)
Figure - 6 Active Region Safe Operating Area
VCE, Collector−Emitter Voltage (Volts)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure - 6 curve is based on TJ(PK) = 150°C; TC is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C,
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
VCE, Collector-Emitter
Voltage (Volts)
IB, Base Current (mA) VR, Reverse Voltage (Volts)
Capacitance (pF)
Figure - 8 Capacitances
IC, Collector Current ( µa)
V, Voltage (Volts)
Figure - 9 “ON” Voltage
IC, Collector Current (Amps)
Figure - 10 Collector Cut-off Region
VBE, Base−Emitter Voltage (Volts)
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High Power Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
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without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, NPN, TO-220 TIP31A
TIP31C
Transistor, PNP, TO-220 TIP32A
TIP32C
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector(Case) Dimensions : Millimetres
Dimensions Min. Max.
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
