High Power Bipolar Transistor Features: * * * ollector-Emitter sustaining voltage C VCEO(sus) = 60V (Min.) - TIP31A, TIP32A = 100V (Min.) - TIP31C, TIP32C Collector-Emitter saturation voltage VCE(sat) = 1.2V (Max.) at IC = 3A Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA Maximum Ratings Characteristic Symbol TIP31A TIP32A TIP31C TIP32C 60 100 Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5 Collector Current-Continuous -Peak IC 3 5 Base Current IB 1 Total Power Dissipation at TC = 25C Derate above 25C PD 40 0.32 W W/C TJ, TSTG -65 to +150 C Operation and Storage Junction Temperature Range V A Thermal Characteristics Characteristic Thermal Resistance Junction to Case Symbol Max. Unit Rjc 3.125 C/W www.element14.com www.farnell.com www.newark.com Page <1> 29/04/13 V1.0 High Power Bipolar Transistor Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Min. Max. Unit VCEO(sus) 60 100 - V OFF Characteristics Collector-Emitter Sustaining Voltage (1) IC = 30mA, IB = 0TIP31A, TIP32A TIP31C, TIP32C Collector Cut off Current VCE = 30V, IB = 0 VCE = 60V, IB = 0 TIP31A, TIP32A TIP31C, TIP32C ICEO - 0.3 Collector Cut off Current VCE = 60V, VEB = 0 VCE = 100V, VEB = 0 TIP31A, TIP32A TIP31C, TIP32C ICES - 0.2 IEBO - 1 hFE 25 10 50 Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA VCE(sat) - 1.2 Base-Emitter On Voltage IC = 3A, VCE = 4V VBE(on) - 1.8 fT 3 - MHz hFE 20 - - Emitter Cut off Current VEB = 5V, IC = 0 mA ON Characteristics (1) DC Current Gain IC = 1A, VCE = 4V IC = 3A, VCE = 4V - V Dynamic Characteristics Current Gain-Bandwidth Product (2) IC = 500mA, VCE = 10V, fTEST = 1MHz Small Signal Current Gain IC = 500mA, VCE = 10V, f = 1kHz (1) Pulse Test: Pulse width 300s, Duty Cycle 2% (2) fT = hFE * fTEST PD, Power Dissipation (Watts) Figure - 1 Power Derating TC, Temperature (C) www.element14.com www.farnell.com www.newark.com Page <2> 29/04/13 V1.0 High Power Bipolar Transistor Figure - 3 Turn-On Time t, Time (s) Figure - 2 Switching Time Equivalent Circuit IC, Collector Current (Amp) RB and RC Varied to Obtain Desired Current Levels Figure - 5 Turn-Off Time t, Time (s) hFE, DC Current Gain Figure - 4 DC Current Gain IC, Collector Current (Amp) IC, Collector Current (Amp) www.element14.com www.farnell.com www.newark.com Page <3> 29/04/13 V1.0 High Power Bipolar Transistor Figure - 6 Active Region Safe Operating Area IC, Collector Current (Amp) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 curve is based on TJ(PK) = 150C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) 150C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, Collector-Emitter Voltage (Volts) Figure - 8 Capacitances Capacitance (pF) VCE, Collector-Emitter Voltage (Volts) Figure - 7 Collector Saturation Region VR, Reverse Voltage (Volts) IB, Base Current (mA) Figure - 10 Collector Cut-off Region V, Voltage (Volts) IC, Collector Current (a) Figure - 9 "ON" Voltage VBE, Base-Emitter Voltage (Volts) IC, Collector Current (Amps) www.element14.com www.farnell.com www.newark.com Page <4> 29/04/13 V1.0 High Power Bipolar Transistor Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Min. Max. A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 0.55 M 2.48 2.98 O 3.7 3.9 Dimensions : Millimetres Part Number Table Description Transistor, NPN, TO-220 Transistor, PNP, TO-220 Part Number TIP31A TIP31C TIP32A TIP32C Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <5> 29/04/13 V1.0