Te ee my EamNrniM ee Re be 1 60 een Nee See SAMSUNG SEMICONDUCTOR INC ion PNP EPITAXIAL SILICON TRANSISTOR BCW70 .-~ ae 0 Prseunu2 ooozar2- s i GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T,=25C) | . Characteristic Symbol Rating Unit Collector-Emitter Voltage Veeco 45 Vv Emitter-Base Voltage Veso 5 : Vv Collector Current Ie 100 | oma Gollector Dissipation Po 350 mw Storage Temperature Tstg 150 C Refer to MMBT5086 for graphs ELECTRICAL CHARACTERISTICS (T, =25C) SOT-23 1. Base 2. Emitter 3, Collector TaA= 19 Characteristic Symbol Test Condition Min Max Unit ! Collector-Emitter Breakdown Voltage BV ceo ic=2.0mA, ls=0 45 Vv ? Collector-Emitter Breakdown Voltage | BVces Ic=100pA, Vep=O0 50 Vv i Emitter-Base Breakdown Voltage BVeso le=10yA, lc=0 5 Vv Collector Cutoff Current Icgo Vea=20V, Ie=0 100 nA DG Current Gain hee Vee=5V, lo=2.0mA 215 500 Collector-Emitter Saturation Voltage Vee (sat) | le=10mA, 1b=0.5mA 0.3 v : Base-Emitter On Voltage Ver (on) lc=2.0MA, Vee=5V 0.6 0.75 Vv i Output Capacitance Cob Voa= 10V, le=O 7.0 pF i - f=1.0MHz : Noise Figure NF Ie=0.2mA, Ver=5.0V 10 dB i Rs=2.0K0, f=1.0KHz Marking F H 2 A cs SAMSUNG SEMICONDUCTOR 487