IRSM005-800MH Half-Bridge IPM for Low Voltage Applications 80A, 40V Description The IRSM005-800MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dcto-dc converters. Features * Package with low thermal resistance and minimal parasitics * Low on-resistance HEXFETs: 2.7 m typ. * Undervoltage lockout on logic supply * Independent gate drive in phase with logic input * Gate drive supply range from 10V to 20V * Propagation delay matched to defined spec * 3.3V, 5V and 15V logic input compatible * RoHS compliant Internal Electrical Schematic Ordering Information 1 Orderable Part Number Package Type Form Quantity IRSM005800MH PQFN 7x8mm Tray 1300 IRSM005800MHTR PQFN 7x8mm Tape and Reel 2000 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. The thermal resistance rating is measured under board mounted and still air conditions. Symbol Description Min Max Unit VDS MOSFET Drain-to-Source Voltage --- 40 V Io Maximum DC current per MOSFET @ TC=25C (Note1) --- 80 A Pd Maximum Power dissipation per MOSFET @ TC =100C --- 13 W TJ (MOSFET & IC) Maximum Operating Junction Temperature --- 150 C TS Storage Temperature Range -40 150 C VGS Gate to Source voltage VB High side floating absolute supply voltage VS High side floating supply offset voltage VCC +/- 20 -0.3 225 VB - 20 VB + 0.3 Low Side fixed supply voltage -0.3 25 VLO Low side output voltage -0.3 VCC +0.3V VHO High side output voltage -0.3 VCC +0.3V VIN Logic input voltage LIN, HIN -0.3 VCC +0.3V V Note1: Calculated based on maximum junction temperature. Bond wires current limit is 49A Inverter Static Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25C, unless otherwise specified. Symbol Description Min Typ Max Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 --- --- V HIN=LIN=0V, ID=250A VGS(TH) Gate Threshold Voltage 2 --- 4 V ID=100A RDS(ON) Drain-to-Source Voltage --- 2.7 5.0 --- 4.2 --IDSS ID=10A, TJ=25C ID=10A, TJ=150C + 20 Zero Gate Voltage Drain Current HIN=LIN=0V, V =40V A --- --- 150 Gate to Source Forward Leakage --- --- 100 Gate to Source Reverse Leakage --- --- -100 RG Internal Gate Resistance --- 1.5 --- VSD Mosfet Diode Forward Voltage Drop --- 0.8 0.9 --- 0.55 IGSS m Conditions nA + HIN=LIN=0V, V =40V, TJ=125C VGS=20V VGS=-20V V IF=10A IF=10A, TJ=150C + RBSOA Reverse Bias Safe Operating Area FULL SQUARE, limited by TJmax Io @ TA=60C RMS Phase Current, sinusoidal modulation, 5kHz --- 13.5 --- ARMS Io @ TA=60C RMS Phase Current, sinusoidal modulation, 20kHz --- 6 --- ARMS EAS Single Pulse Avalanche Energy 9.2 --- --- mJ 2 www.irf.com (c) 2014 International Rectifier V = 40V, VCC=+15V to 0V V+=32V, TJ=125C, MI=1, PF=0.8, typical board mount. See Figure 2. March 19, 2014 IRSM005-800MH Inverter Dynamic Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25C, unless otherwise specified. gfs Forward Transconductance 159 --- --- QG S Total Gate Charge --- 65 98 QGS Gate to Source Charge --- 16 --- QGD Gate to Drain Charge --- 23 --- QSYNC Total Gate Charge Sync. (QG - QGD ) --- 42 --- TDON Mosfet Turn On Delay Time --- 11 --- TR Mosfet Rise Time --- 37 --- TDOFF Mosfet Turn Off Delay Time --- 33 --- TF Mosfet Fall Time --- 26 --- CISS Input Capacitance --- 3174 --- COSS Output Capacitance --- 479 --- CRSS Reverse Transfer Capacitance --- 332 --- TRR Reverse Recovery TIme --- 16 --- ns QRR Reverse Recovery Charge --- 5 --- nC IRRM Reverse Recovery Current --- 0.5 --- A nC ID =50A VDS = 10V ID =50A VDS = 20V VGS=10V ID =50A,VDS = 0V,VGS = 10V ns ID =30A VDD = 20V VGS=10V RG=2.7 pF F= 1.0MHz VDS = 25V VGS=0V IF =50A VR =34V dI/dt= 100A/us Recommended Operating Conditions Driver Function For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Symbol Definition Min Typ Max Units VB High side floating supply voltage VS+10 VS+15 VS+20 V VS High side floating supply offset voltage Note 1 --- 40 V VCC Low side and logic fixed supply voltage 10 15 20 V VIN Logic input voltage LIN, HIN COM --- VCC V HIN High side PWM pulse width 1 --- --- s Deadtime Suggested dead time between HIN and LIN 0.3 0.5 --- s 3 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Static Electrical Characteristics Driver Function VBIAS (VCC, VBS)=15V, TJ=25C, unless otherwise specified. The VIN, and IIN parameters are referenced to COM Symbol Definition Min Typ Max VIH Positive going input threshold for LIN, HIN 2.5 --- --- VIL Negative going input threshold for LIN, HIN --- --- 0.8 VOH High Level Output Voltage --- 0.05 0.2 VOL Low Level Output Voltage --- 0.02 0.1 VCCUV+ VBSUV+ VCC/VBS supply undervoltage, Positive going threshold 8.0 8.9 9.8 VCCUVVBSUV- VCC/VBS supply undervoltage, Negative going threshold 7.4 8.2 9.0 VCCUVH VBSUH VCC/VBS supply undervoltage lock-out hysteresis --- 0.8 --- ILK Offset Supply Leakage Current --- --- 50 IQBS Quiescent VBS supply current --- 45 75 Units Test Conditions VCC=10 to 20V IO=2mA V VB=VS=200V VIN =0V or 5V A IQCC Quiescent VCC supply current --- 250 500 IIN+ Input bias current VIN=5V for LIN, HIN --- 4 10 VIN = 5V IIN- Input bias current VIN=0V for LIN, HIN --- 0.5 1 VIN =0V IO+ IC high output short circuit current 200 290 --- VO= 0V, VIN = 5V, PW <10us mA IO- IC low output short circuit current 420 600 --- Dynamic Electrical Characteristics Driver Function VBIAS (VCC, VBS)=15V, TJ=25C unless otherwise specified, CL = 1000 pF, Driver only timing. Symbol Description Min Typ Max TR IC Turn on Rise Time --- 50 150 TF IC Turn off Fall Time --- 35 90 TON IC Input to Output propagation turnon delay time --- 160 220 --- 150 220 --- --- 50 TOFF MT 4 IC Input to Output propagation turnoff delay time IC Delay matching, HS and LS turnon/off www.irf.com (c) 2014 International Rectifier Units Conditions ns March 19, 2014 IRSM005-800MH Thermal and Mechanical Characteristics Symbol Description Min Typ Max Units Conditions Rth(J-B) Thermal resistance, junction to mounting pad, each MOSFET --- 3.8 --- C/W Standard reflow-solder process Rth(J-A) Thermal resistance, junction to ambient, each MOSFET --- 40 --- C/W Mounted on 50mm of four-layer FR4 with 28 vias 2 Input-Output Logic Level Table HIN LIN U,V,W HI HI Shoot-through LO LO ** HI LO V+ LO HI 0 * V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding 5 www.irf.com (c) 2014 International Rectifier March 19, 2014 1.8 8.0 R DS(on) , Drain-to-Source On Resistance (Normalized) RDS(on) , Drain-to -Source On Resistance (m ) IRSM005-800MH ID = 50A 7.0 6.0 5.0 T J = 125C 4.0 3.0 2.0 T J = 25C 1.0 ID = 50A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 4 6 8 10 12 14 16 18 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig. 1 Typical On Resistance vs Gate Voltage Fig.2 Normalized On Resistance vs Temperature 1000 1000 ID, Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP T J = 150C 100 T J = 25C 10 100 BOTTOM 4.5V 10 60s PULSE WIDT H VDS = 10V 60s PULSE WIDTH Tj = 150C 1 1.0 3 4 5 6 7 0.1 8 1 100000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = Cds + Cgd C, Capacitance (pF) 1000 100 100 Fig.4 Typical Output Characteristic @ 150C Fig. 3 Typical Transfer Characteristic TOP 10 V DS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10000 Ciss Coss Crss 1000 4.5V 60s PULSE WIDT H Tj = 25C 100 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig. 5 Typical Output Characteristic @ 25C 6 www.irf.com (c) 2014 International Rectifier 1 10 100 VDS, Drain-to-Source Voltage (V) Fig. 6 Typical Capacitance vs Drain to Source Voltage March 19, 2014 IRSM005-800MH 1000 14.0 12.0 ISD, Reverse Drain Current (A) VGS, Gate-to-Source Voltage (V) ID= 50A VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 100 T J = 150C T J = 25C 10 VGS = 0V 2.0 1.0 0.0 0.0 0 10 20 30 40 50 60 70 80 90 QG, Total Gate Charge (nC) 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Fig.8 Typical Diode Forward Voltage Drop Fig. 7 Typical Gate Charge vs Gate Voltage VGS(th) , Gate threshold Voltage (V) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 4.5 50 Id = 1.0mA 48 46 44 42 4.0 3.5 3.0 ID = 100A ID = 1.0mA ID = 1.0A 2.5 2.0 1.5 -75 -50 -25 40 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) IF = 30A V R = 34V 75 100 125 150 IF = 30A V R = 34V 80 TJ = 25C TJ = 125C QRR (nC) IRRM (A) 50 100 7 5 25 Fig.10 Threshold Voltage vs Temperature Fig. 9 Typical Breakdown Voltage vs Temperature 6 0 T J , Temperature ( C ) 4 TJ = 25C TJ = 125C 60 40 3 2 20 1 0 0 0 0 200 400 600 800 1000 diF /dt (A/s) 200 400 600 800 Fig. 12 Typical Recovery Charge vs Temperature Fig. 11 Typical Recovery Current vs dI/dt 7 www.irf.com (c) 2014 International Rectifier 1000 diF /dt (A/s) March 19, 2014 IRSM005-800MH Module Pin-Out Description Pin Name Description 3, 6, 8 COM Negative of Gate Drive Supply Voltage 2 VCC 15V Gate Drive Supply 4 HIN Logic Input for High Side (Active High) 5 LIN Logic Input for Low Side (Active High) 7 LO Low Side FET Gate 9 G2 Low Side Gate Drive Output 10, 16, 17 VS Phase Output 11 - 15 V- Low Side Source Connection 18 - 23 V+ DC Bus 24 G1 High Side Gate Drive Output 25 HO High Side FET Gate 26 - 27 VS Negative of Bootstrap Supply 1 VB Positive of Bootstrap Supply 16 VS 17 VS 18-V+ 19 V+ V- 15 V- 14 20 V+ V- 13 21 V+ V- 12 22 V+ V- 11 23 V+ VS 10 24 G1 G2 9 25 HO 28 COM 8 26 VS LO 7 27 VS COM 6 LIN 5 HIN 4 COM VCC 3 2 VB 1 BOTTOM OF PACKAGE VIEW Exposed pad (Pin 28) has to be connected to COM for better electrical performance 8 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Figure 13: Typical Application Connection 1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR Design tip DT04-4 or application note AN-1044. 20 18 16 14 12 10 Ser i es1 8 6 4 2 0 0.1 1 10 100 Figure 14: Typical Output Current (RMS of fundamental) vs. Modulation Frequency + 2 Sinusoidal Modulation, V =32V, TJ=125C, TA=60C, MI=1, PF=0.8, mounted on 50 mm of FR4 9 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Qualification Qualification Level Industrial (per JEDEC JESD 47E) Moisture Sensitivity Level Machine Model ESD Human Body Model RoHS Compliant MSL3 (per IPC/JEDEC J-STD-020C) Class B (200V) (per JEDEC standard JESD22-A115A) Class 1C (1000V) (per EIA/JEDEC standard EIA/JES-001A-2011) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. HU U Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. 10 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Package Outline (Top & Side view) 11 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Package Outline (Bottom View, 1 of 2) 1. 2. 3. 4. 12 For mounting instruction see AN-1178. For recommended PCB via design see AN-1091. For recommended design, solder profile, integration and rework guidelines see AN-1028. For board inspection guidelines see AN-1133. www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Tape and Reel Details 13 www.irf.com (c) 2014 International Rectifier March 19, 2014 IRSM005-800MH Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 14 www.irf.com (c) 2014 International Rectifier March 19, 2014