IRSM005-800MH
2 www.irf.com © 2014 International Rectifier March 19, 2014
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are
not tested at manufacturing. All voltage parameters are absolute voltages referenced to V
SS
unless otherwise
stated in the table. The thermal resistance rating is measured under board mounted and still air conditions.
Symbol Description Min Max Unit
V
DS
MOSFET Drain-to-Source Voltage --- 40 V
I
o
Maximum DC current per MOSFET @ T
C
=25°C (Note1) --- 80 A
P
d
Maximum Power dissipation per MOSFET @ T
C
=100°C --- 13 W
T
J
(MOSFET & IC) Maximum Operating Junction Temperature --- 150 °C
T
S
Storage Temperature Range -40 150 °C
V
GS
Gate to Source voltage +/- 20
V
B
High side floating absolute supply voltage -0.3 225
V
S
High side floating supply offset voltage V
B
- 20 V
B
+ 0.3
V
CC
Low Side fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+0.3V
V
HO
High side output voltage -0.3 V
CC
+0.3V
V
IN
Logic input voltage LIN, HIN -0.3 V
CC
+0.3V
V
Note1: Calculated based on maximum junction temperature. Bond wires current limit is 49A
Inverter Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
)=15V, TJ=25ºC, unless otherwise specified.
Symbol Description Min Typ Max Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 --- --- V H
IN
=L
IN
=0V, I
D
=250µA
V
GS(TH)
Gate Threshold Voltage 2 --- 4 V I
D
=100µA
--- 2.7 5.0 I
D
=10A, T
J
=25°C
R
DS(ON)
Drain-to-Source Voltage
--- 4.2
mΩ
I
D
=10A, T
J
=150°C
--- 20 H
IN
=L
IN
=0V, V
+
=40V
I
DSS
Zero Gate Voltage Drain Current
--- --- 150
µA H
IN
=L
IN
=0V, V
+
=40V,
T
J
=125°C
Gate to Source Forward Leakage --- --- 100 V
GS
=20V
I
GSS
Gate to Source Reverse Leakage --- --- -100
nA
V
GS
=-20V
R
G
Internal Gate Resistance --- 1.5 --- Ω
--- 0.8 0.9 I
F
=10A
V
SD
Mosfet Diode Forward Voltage Drop
--- 0.55
V
I
F
=10A, T
J
=150°C
RBSOA Reverse Bias Safe Operating Area FULL SQUARE, limited by T
Jmax
V
+
= 40V,
V
CC
=+15V to 0V
I
o
@ T
A
=60°C RMS Phase Current, sinusoidal
modulation, 5kHz --- 13.5 --- A
RMS
I
o
@ T
A
=60°C RMS Phase Current, sinusoidal
modulation, 20kHz --- 6 --- A
RMS
V+=32V, TJ=125°C, MI=1,
PF=0.8, typical board
mount. See Figure 2.
EAS Single Pulse Avalanche Energy 9.2 --- --- mJ