TISP4265H4BJ THRU TISP4360H4BJ - Power Innovations

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

Information is current as of public ation date. Products conf orm to specificatio ns in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily incl ude testing of all par ameters.

HIGH HOLDING CURRENT 100 A 10/1000 OVERVOLTAGE PROTECTO RS

●8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating

●High Holding Current . . . . . . . . . 225 mA min.

●Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

●Rated for International Surge Wave Shapes

●Low Differential Capacitance . . . 39 pF max.

DEVICE

VDRM

MINIMUM

V(BO)

MAXIMUM

‘4165 135 165

‘4180 145 180

‘4200 155 200

‘4265 200 265

‘4300 230 300

‘4360 270 360

WAV E SHAPE STANDARD ITSP

2/10 µs GR-1089-CORE 500

8/20 µs IEC 61000-4-5 300

10/160 µs FCC Part 68 250

10/700 µs ITU-T K20/21 200

10/560 µs FCC Part 68 160

10/1000 µs GR-1089-CORE 100

description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by

a.c. power system or ligh tni ng f las h dis tu rbanc es whi ch ar e ind uc ed or co nducted o n to the tel eph one li ne. A

single dev ice provide s 2-point protection and is ty pically u sed for the protec tion of 2- wire telec ommunicatio n

equipmen t (e.g. between the Ri ng and Tip wires for telephone s and mod ems). Combi nations of devices can

be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially

clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to

crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the

over voltage to be safely divert ed through the device. The high crowbar holdin g current prevents d.c. latchu p

as the diverted current subsides.

This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels

(135 V to 27 0 V). They are guaranteed to voltage limit and wi thstand the listed inte r national lightning s urges

in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-

214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding

current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000

TISP4xxxM3BJ series is available.

device symbol

RSD4XAA

Terminals T and R correspond to the

alternative line designators of A and B

T(A)R(B)

SMBJ PACKAGE

(TOP VIEW )

MDXXBG

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

absolute maximum ratings, TA = 25°C (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage, (see Note 1)

‘4165

‘4180

‘4200

‘4265

‘4300

‘4360

VDRM

±135

±145

±155

±200

±230

±270

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

ITSP A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500

8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300

10/160 µs (FCC P art 68, 10/160 µs voltage wave shape) 250

5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220

0.2/310 µs (I3124, 0.5/700 µs voltage wav e shape) 200

5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200

5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200

10/560 µs (FCC P art 68, 10/560 µs voltage wave shape) 160

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

ITSM

2.1 A

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wa ve

1000 s 50 Hz/60 Hz a.c.

Initial rate of rise of on-state current, Exponential current ramp , Maximum ramp v alue < 200 A di T/dt 400 A/µs

Junction temperature TJ-40 to +150 °C

Storage temperature range Tstg -65 to +150 °C

NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.

2. Initially the TISP4xxxH4BJ must be in thermal equilibrium with TJ=25°C.

3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.

4. See Applications Information and Figure 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD 51-3 PCB with standard footprint dimensions connected with 5 A rated printed w iring

trac k widths . See Figure 8 for the current ratings at other durations . Derate current v alues at -0. 61 %/°C for ambient temperatu res

above 25 °C

NOVEMBER 1 997 - REVISED MA RCH 1999

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

electri cal characteristics for the T and R terminals, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IDRM Repetitive peak off-

state current VD = ±VDRM TA = 25°C

TA = 85°C ±5

±10 µA

V(BO) Breakover v oltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω

‘4165

‘4180

‘4200

‘4265

‘4300

‘4360

±165

±180

±200

±265

±300

±360

V(BO) Impulse breakover

voltage

dv/dt ≤±1000 V/µs, Linear voltage ram p,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

‘4165

‘4180

‘4200

‘4265

‘4300

‘4360

±174

±189

±210

±276

±311

±373

I(BO) Break over current dv/dt = ±750 V/ms, RSOURCE = 300 Ω±0.15 ±0.8 A

VTOn-state voltage IT=±5A, t

W= 100 µs ±3 V

IHHolding current IT= ±5 A, di/dt = +/-30 mA /ms ±0.225 ±0.8 A

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5 kV/µs

IDOff-state current VD=±50V T

A = 85°C ±10 µA

Coff Off-state capacitance

f = 100 kHz, Vd=1V rms, V

D=0,

f = 100 kHz, Vd=1V rms, V

D=-1V

f = 100 kHz, Vd=1V rms, V

D=-2V

f = 100 kHz, Vd=1V rms, V

D=-50V

f = 100 kHz, Vd=1V rms, V

D= -100 V

‘4165 thru ‘4200

‘4265 thru ‘4360

‘4165 thru ‘4200

‘4265 thru ‘4360

‘4165 thru ‘4200

‘4265 thru ‘4360

‘4165 thru ‘4200

‘4265 thru ‘4360

‘4165 thru ‘4200

‘4265 thru ‘4360

thermal characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RθJA Junction to free air thermal resistance

EIA/JESD51-3 PCB, IT = ITSM(1000),

TA = 25 °C, (see Note 6) 113 °C/W

265 m m x 210 mm populated line card,

4-layer PCB, IT = ITSM(1000), TA = 25 °C 50

NOTE 6: EIA/JESD51-2 environment and PCB has standard footpr int dimensions connected with 5 A rated printed wiring track widths.

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

PARAMETER MEASUREM ENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

-v VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Qua drant I

Switching

Characteristic

V(BO)

I(BO)

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAAB

VDRM

IDRM

NOVEMBER 1 997 - REVISED MA RCH 1999

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 2. Figure 3.

Figure 4. Figure 5.

OFF-STATE CURRENT

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

|ID| - Off-State Current - µA

0·001

0·01

0·1

100 TCHAG

VD = ±50 V

NORMALISED BREAKOVER VOLTAGE

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normali sed Breakover Voltage

0.95

1.00

1.05

1.10 TC4HAF

ON-STATE CURRENT

ON-STATE VOLTAGE

VT - On-State Voltage - V

0.7 1.5 2 3 4 5 7110

IT - On-State Current - A

1.5

150

200

100

TA = 25 °C

tW = 100 µs

TC4HAH

'4265

THRU

'4360

'4165

THRU

'4200

NORMALISED HOLDING CURRENT

JUNCTION TEMPERATURE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normal ise d Holdi ng Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4HAK

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 6. Figure 7.

NORMALISED CAPACITANCE

OFF-STATE VOLTAGE

VD - Off-state Voltage - V

0.5 1 2 3 5 10 20 30 50 100150

Capacitance Normalised to VD = 0

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

TJ = 25°C

Vd = 1 Vrm s

TC4HAI

'4265 THRU '4360

'4165 THRU '4200

DIFFERENTIAL OFF-STATE CAPACITANCE

RATED REPE TITIVE PEA K OFF-STATE VOLTAGE

VDRM - Repetitive Peak O ff-State Vo ltage - V

130 150 170 200 230 270 300

∆

∆∆

∆C - Differential Off-S tate Cap aci tance - p F

∆

∆∆

∆C = Coff(-2 V) - Coff(-50 V)

'4165

'4180

'4200

'4300

'4360

'4265

TCHAJ

NOVEMBER 1 997 - REVISED MA RCH 1999

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

RATING AND THERMAL INFORMATIO N

Figure 8. Figure 9.

Figure 10. Figure 11.

NON-REPETITIVE PEAK ON-STATE CURRE NT

CURRENT DURATION

t - Current Duration - s

0·1 1 10 100 1000

ITSM(t) - Non-Repeti ti ve Peak On-State C urrent - A

1.5

TI4HAC

VGEN = 600 Vrm s, 50/60 Hz

RGEN = 1.4*VGEN/ITSM(t)

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA = 25 °C

THERMAL IMPEDANCE

POWER DURATION

t - Power Du rati o n - s

0·1 1 10 100 1000

Zθ

θθ

θJA(t) - Transient Thermal Impedance - °C/W

1.5

150

100

TI4HAE

ITSM(t) APPLIED F O R TIM E t

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA = 25 °C

VDRM DERATING FACTOR

MINIMUM AMBIENT TEMPERATURE

TAMIN - Minimum Ambient Temperature - °C

-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20

Derating Factor

0.93

0.94

0.95

0.96

0.97

0.98

0.99

1.00 TI4HAF

'4265 THRU ' 4360

'4165 THRU ' 4200

IMPULSE RATING

AMBIENT TEMPERATURE

TA - Ambient Temperature - ° C

-40-30-20-100 1020304050607080

Impulse Current - A

100

120

150

200

250

300

400

500

600

700

IEC 1 .2/50 , 8/20

ITU-T 10/ 700

FCC 10/560

BELLCORE 2/10

BELLCORE 10/1000

FCC 10/160

TC4HAA

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

APPLICATIONS INFORMATION

deployment

These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage

between two conductors (Figure 12) or in multiples to limit the voltage at se v eral points in a circuit (Figure 13).

In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This

configu ration is nor ma lly used to protect ci rcuits wit hout a ground re fer ence, such as mod ems. In Figure 13,

protec tors Th2 and Th3 l imit the maxi mum voltage be tween each cond uctor and groun d to the ±V (BO) of the

individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)

value. If the equipment being protected has all its vulnerable components connected between the conductors

and ground, then protector Th1 is not required.

impulse testing

To ver ify the wit hstand capabilit y and safety of the equipment, stan dards req uire that the equipment is tested

with various impulse wave forms. The table below shows some common values.

If the impulse generator current e xceeds the protectors current rating then a series resistance can be used to

reduce the curren t to the prot ectors rat ed valu e and so pr event possi ble failure. The requ ired value of se ries

resistance for a given waveform is given by the following calculations. First, the minimum total circuit

impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The

impuls e generators fictive impe dance (gene ra tors peak vol tage divided by peak shor t c ircuit curren t) is then

subtracte d from th e min imum total circui t impe dance to give the require d value of ser i es resis tance. In some

cases th e equipment will require ver ification over a temperature range. By using the rated wavefor m va lues

from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range

of -40 °C to 85 °C.

Figure 12. TWO POINT PROTECTION Figure 13. MULTI-POINT PROTECTION

STANDARD PEAK VOLTAGE

SETTING

VOL TAGE

WAVE FORM

µs

PEAK CURRENT

VALUE

CURRENT

WAVE FORM

µs

TISP4xxxH4

25 °C RATING

SERIE S

RESISTANCE

Ω

GR-1089-CORE 2500 2/10 500 2/10 500 0

1000 10/1000 100 10/1000 100

FCC Part 68

(March 1998)

1500 10/160 200 10/160 250 0

800 10/560 100 10/560 160 0

1500 9/720 † 37.5 5/320 † 200 0

1000 9/720 † 25 5/320 † 200 0

I3124 1500 0.5/700 37.5 0.2/310 200 0

ITU-T K20/K21 1500

4000 10/700 37.5

100 5/310 200 0

† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator

Th1

Th3

Th2

Th1

NOVEMBER 1 997 - REVISED MA RCH 1999

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

a.c. power testing

The protec tor can withs tand curre nts applied for times n ot exc eeding thos e shown in Figure 8 . Currents tha t

exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive

Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used

to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In

some cases it may be necessary to add some extra series resistance to prevent the fuse opening during

impulse testing. The current versus time characteristic of the overcurrent protector must be below the line

shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL

1459 wiring simulator failure).

capacitance

The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V,

-2 V and -5 0 V. Where pos sible values are also given for -100 V. Values for othe r voltages may be calc ulate d

by multiplying the VD= 0 ca pacitanc e value by the factor given in Figure 6. Up to 10 MHz th e capacit ance is

essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on

connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias

voltag es wi ll be about - 2 V a nd -50 V. Figure 7 shows the di fferential (lin e u nba lance) capacitance c aus ed by

biasing one protector at -2 V and the other at -50 V.

normal system voltage levels

The protector should not clip or limit the voltages that occur in normal system operation. For unusual

conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this

condition about 10 V of clipping is normally possible without activating the ring trip circuit.

Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated

value should not be less than the maximum normal system voltages. The TISP4265H4BJ, with a VDRM of

200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of

-58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. How e v er, this is the

open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the

extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This

level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C

value. Figure 10 shows that this condition will occur at an ambient temperature of -22 °C. In this example, the

TISP4265H4BJ will allow normal equipment operation provided that the minimum expected ambient

temperature does not fall below -22 °C.

JESD51 thermal measurement method

To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51

standard. P art 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3)

cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the

standar d (JESD51- 3, 1996) defines two test PCBs for surface mount compon ents; one for packages smaller

than 27 mm o n a si de and th e other for packages up to 48 mm. The SMBJ measureme nts used the sm aller

76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal

conducti vity (hi gh ther mal res istance) and represen t a worse case c ondition . The PCBs used in the ma jor ity

of applic ations will a chieve lower values of the r mal res istance a nd so can dis sipate higher power levels tha n

indicated by the JESD51 values.

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

typical circuits

Figure 14. MODEM INTER-WIRE PROTECTION Figure 15. PROTECTION MODULE

Figure 16. ISDN PROTECTION

Figure 17. LINE CARD RING/TEST PROTECTION

FUSE

TISP4360H4

AI6XBP

RING DETECTOR

HOOK SWITCH

D.C. SINK

SIGNAL

MODEM

RING

TIP

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

PROTECTED

EQUIPMENT

E.G. LINE CARD

AI6XBK

R1a

R1b

Th3

Th2

Th1

AI6XBL

SIGNAL

D.C.

TEST

RELAY RING

RELAY SLIC

RELAY

TEST

EQUIP-

MENT RING

GENERATOR

S1a

S1b

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

Th4

Th5

SLIC

PROTECTION

RING/TEST

PROTECTION

OVER-

CURRENT

PROTECTION

S2a

S2b

S3a

S3b

VBAT

220 n F

AI6XBJ

TISP6xxxx,

TISPPBLx,

½TISP6NTP2

NOVEMBER 1 997 - REVISED MA RCH 1999

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

MECHANICAL DATA

SMBJ (DO-214AA)

plastic surface mount diode package

This sur face m ount pa ckage con sists of a circ uit m ounted on a l ead frame and enca psulated wit hin a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

SMB

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBHA

5,59

5,21

2,40

2,00

2,10

1,90

1,52

0,76

4,57

4,06

3,94

3,30 2

Index

Mark

(if needed )

2,32

1,96

0,20

0,10

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

MECHANICAL DATA

recommended printed wiring footprint.

device symbolization code

Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.

car rier info rmation

Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the

customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be

embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.

DEVICE SYMOBLIZATION

CODE

TISP4165H4BJ 4165H4

TISP4180H4BJ 4180H4

TISP4200H4BJ 4200H4

TISP4265H4BJ 4265H4

TISP4300H4BJ 4300H4

TISP4360H4BJ 4360H4

CARRIER ORDER #

Embossed Tape Reel Pack TISP4xxxH4BJR

Bulk Pack TISP4xxxH4BJ

SMB Pad Size

ALL LINEAR DIMENSIONS IN MILLIMETERS

2.40

2.16

2.54

MDXXBI

NOVEMBER 1 997 - REVISED MA RCH 1999

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

MECHANICAL DATA

tape dimensions

SMB Package Single-Sprocket Tape

ALL LINEAR DIMENSIONS IN MILLIMETERS

Direction of Feed

0,40 MAX.

4,5 MAX.

0 MI N.

12,30

11,70

1,65

1,55

4,10

3,90

2,05

1,95

ø 1,5 MIN.

7,90

8,10

Embossment

Carrier Tape

5,55

5,45

1,85

1,65

Cover

Tape

8,20

MAX.

NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the

component cannot rotate more than 20° within the determined cavity.

B. Taped devices are supplied on a reel of the following dimensions:-

Reel diam eter : 330 ±3,0 mm

Reel hub diameter 75 mm MIN.

Reel axial hole: 13,0 ±0,5 mm

3000 devices are on a reel.

MDXXBJ

20°

Typic al com pon ent

cavity centre line

Max imi um com ponent

rotation

Typic al com pon ent

centre line

Index

Mark

(if needed )

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOV EM BER 1997 - REVISED MARCH 1999

PRODUCT INFORMATION

IMPORTANT NOTICE

Power I nnovatio ns Li mit e d (P I ) r e serves the rig ht to ma ke ch ang es t o its pr o d ucts o r to di sc on tinu e any s em ic o nd uc tor p ro du ct

or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is

current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with

PI's sta nda rd warranty. Testing and ot her quality cont rol tec hn iqu es are uti li z ed to the extent PI dee ms ne ce ss ary to sup port t his

warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government

requirements.

PI assumes no liability for applications assistance, customer product design, software perfor mance, or infringement of patents

or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design

right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such

semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE

FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.