TBD62789APG
2017-04-26
1
©2017 Toshiba Corporation
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62789APG
8-ch source type DMOS transistor array including D type flip-flop
TBD62789APG is a DMOS transistor array with 8 circuits including D type
flip flop logic circuits. Please be careful about thermal conditions during use.
Features
• Built-in 8 circuits
• High output voltage : VOUT = 50 V (max)
• High output current : IOUT = 500 mA/ch (max)
• Package : DIP20-P-300-2.54A
Pin Assignment (top view)
DIP20-P-300-2.54A
Weight
:
1.4 g (typ.)
/CLR
CLK
D3
D1
D2
D4
D5
D6
D7
D8
GND
Y8
VDD
Y7
Y6
Y5
Y4
Y3
Y2
Y1
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Pin Description
Pin No. Pin name Function
1
/CLR
Input pin of clear signals
2
D1
Input pin of data signals
3
D2
Input pin of data signals
4
D3
Input pin of data signals
5
D4
Input pin of data signals
6
D5
Input pin of data signals
7
D6
Input pin of data signals
8
D7
Input pin of data signals
9
D8
Input pin of data signals
10
CLK
Input pin of clock signals
11
GND
Ground pin
12
Y8
Output pin
13
Y7
Output pin
14
Y6
Output pin
15
Y5
Output pin
16
Y4
Output pin
17
Y3
Output pin
18
Y2
Output pin
19
Y1
Output pin
20
VDD
Power supply pin
Block Diagram
Basic circuit may be omitted partially or simplified for explanatory purpose.
Function Table
INPUT
OUTPUT: Y
/CLR
CLK
D
L
X
X
Z (OFF)
H
↑
L
Z (OFF)
H
↑
H
H (ON)
H
L
X
Y0
H
↓
X
Y0
↑: Change from”L” to”H”
↓: Change from”H” to”L”
H: High level
Z: High impedance (OFF)
X: Don’t care
Y0: Y level immediately before determining the input condition shown in the table
VDD
CLK
/CLR
100kΩ
(typ.)
100kΩ
(typ.)
CK
D
Q
R
D1
Y1
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D2
Y2
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D3
Y3
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D4
Y4
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D5
Y5
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D6
Y6
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D7
Y7
Clamp
diode
100kΩ
(typ.)
CK
D Q
R
D8
Y8
Clamp
diode
100kΩ
(typ.)
GND
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Power supply voltage VDD 50 V
Output current (per ch) IOUT -500 mA
Input voltage VIN -0.5 to 6 V
Clamp diode withstand voltage VR 50 V
Clamp diode forward current IF 500 mA
Power dissipation PD (Note1) 1.76 (Note2) W
Operating temperature Topr -40 to 85 °C
Storage temperature Tstg -55 to 150 °C
Note1: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy)
Note2: When Ta exceeds 25 °C, it is necessary to do the derating with 14.1 mW/°C.
Operating Ranges (Ta = -40 to 85°C, unless otherwise specified)
Characteristics Symbol Test conditions Min Typ. Max Unit
Power supply voltage VDD ― 4.5 ― 50 V
Output current (per ch)
(Note)
IOUT
1 circuit ON, Ta = 25 °C 0 ― -400
mA
tpw = 25 ms
8 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 % 0 ― -400
Duty = 50 % 0 ― -195
Clamp diode forward current IF ― ― ― 400 mA
Input voltage (Output on) VIN (ON) CLK pin, /CLR pin, and D1 to D8 pin 2.0 ― 5.5 V
Input voltage (Output off) VIN (OFF) CLK pin, /CLR pin, and D1 to D8 pin 0 ― 0.8 V
Setup time tsu D setup time to CLK input 15 ― ― ns
Hold time th D hold time to CLK input 15 ― ― ns
Pulse width of CLK and /CLR tw CLK pin and /CLR pin 100 ― ― ns
Clock frequency fCLK CLK pin ― ― 5 MHz
Note: Stand alone
Timing chart
Timing charts may be omitted partially or simplified for explanatory purposes.
CLK
D
th
tsu
tw
50%
50%
50%
50%
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Electrical Characteristics (Ta = 25°C, unless otherwise specif i ed)
Characteristics Symbol Test
Circuit
Test conditions Min Typ. Max Unit
Output leakage current Ileak 1 VDD = 50 V, Ta = 85 °C
At output OFF ― ― 1.0 μA
Output voltage
(Output ON-resistance)
VDS
(RON)
2
IOUT = -350 mA
VDD = 10 V ― 0.49
(1.4)
1.14
(3.25)
V
(Ω)
IOUT = -200 mA
VDD = 10 V ― 0.28
(1.4)
0.65
(3.25)
IOUT = -100 mA
VDD = 10 V ― 0.14
(1.4)
0.325
(3.25)
Input current (Output ON) IIN (ON) 3 VIN = 5.5 V, VDD = 50 V ― ― 100 μA
Input current (Output OFF) IIN(OFF) 4 VIN = 0 V, VDD = 50 V ― ― 1 μA
Power supply current
ICC(ON) 3 VDD=50 V, Output ON ― 24 40 mA
ICC(OFF) 4 VDD=50 V, Output OFF ― 24 40 mA
Clamp diode leakage current
I
R
5 VR = 50 V, Ta = 85 °C ― ― 1.0 μA
Clamp diode forward voltage VF 6 IF = 350 mA ― ― 2.0 V
Propagation delay time
tpHL
(CLK) 7
CLK (50%) to Y (50%)
Y changes from H to L.
CL=15pF, RL=25Ω
VDD = 10 V
― 120 200 ns
tpLH
(CLK) 7
CLK (50%) to Y (50%)
Y changes from L to H.
CL=15 pF, RL=25 Ω
VDD = 10 V
― 120 200 ns
tpHL
(/CLR) 7
/CLR (50%) to Y (50%)
Y changes from H to L.
CL=15 pF, RL=25 Ω
VDD = 10 V
― 120 200 ns
Timing chart
Timing charts may be omitted partially or simplified for explanatory purposes.
tpHL(CLK)
CLK
Y
50%
50%
50%
50%
tpLH(CLK)
/CLR
Y
50%
50%
tpHL(/CLR)
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Test Circuit
1. Ileak 2. VDS (RON)
3. IIN (ON) and ICC (ON) 4. IIN (OFF) and ICC (OFF)
5. IR 6. VF
7. tpHL (CLK), tpLH (CLK), tpHL (/CLR)
Test circuits may be omitted partially or simplified for explanatory purpose.
Precautions for Using
This IC does not incorporate protection circuits for over current and over voltage.
Therefore, if the short-circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred,
the current or voltage beyond the absolute maximum rating is impressed, and IC may be destroyed. When designing,
please consider enough in power supply line, output line, and GND line.
In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the
appropriate fuse in the power supply line.
VDD
Y
D
GND
VDD
CLK
/CLR
IIN(OFF)
IIN(OFF)
IIN(OFF)
VIN
VIN
VIN
VDD
Y
D
GND
Ileak
VDD
CLK
/CLR
PG
(Y = OFF)
RON = VDS / IOUT
VDD
Y
D
GND
IOUT
VDD
CLK
/CLR
PG
(Y = ON)
VDS
VDD
Y
D
GND
VDD
CLK
/CLR
IIN(ON)
IIN(ON)
IIN(ON)
VIN
VIN
VIN
ICC(ON)
ICC(OFF)
VDD
Y
D
GND
IR
VDD
CLK
/CLR
PG
(Y = OFF)
VR
VDD
Y
D
GND
IF
VDD
CLK
/CLR
PG
(Y = OFF)
VF
VDD
Y
D
GND
VDD
CLK
/CLR
PG
RL
CL
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Package Dimensions
DIP20-P-300-2.54A
Unit: mm
Weight: 1.4 g (typ.)
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Notes on Contents
1. Block diagram
Block diagram may be simplified for explanatory purpose.
2. Test Circuit
Test circuit may be simplified for explanatory purpose.
3. Timing Chart
Timing charts may be simplified for explanatory purposes.
IC Usage Considerations
Notes on handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a
moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of
power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result
in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly
to which current is applied even just once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the
effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time
and insertion circuit location, are required.
(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the
negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or
ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the
protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such
as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input
or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a
speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may
cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL)
connection-type IC that inputs output DC voltage to a speaker directly.
Points to remember on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consideration in system design.
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in
this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury
or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or
incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant
TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product
and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the
application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or
applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b)
evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms,
sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and
applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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