Green DMC2400UV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Device V(BR)DSS Q1 20V Q2 -20V Features and Benefits RDS(ON) max ID max TA = +25C Low On-Resistance Low Gate Threshold Voltage VGS(th) <1V 0.5 @ VGS = 4.5V 1030mA Low Input Capacitance 0.9 @ VGS = 1.8V 740mA Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Low Input/Output Leakage 2.0 @ VGS = -1.8V -460mA Complementary Pair MOSFET Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management Ultra-Small Surface Mount Package ESD Protected Gate to 2kV HBM Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data applications. Applications Case: SOT563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Power management functions Battery Operated Systems and Solid-State Relays Load switch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.003 grams (approximate) D1 SOT563 G2 S2 Q2 Q1 S1 ESD PROTECTED TO 2kV Top View G1 D2 Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number DMC2400UV-7 DMC2400UV-13 Notes: Case SOT563 SOT563 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information CA3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMC2400UV Document number: DS35537 Rev. 7 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 10 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D June 2013 (c) Diodes Incorporated DMC2400UV Maximum Ratings - Q1 N-CHANNEL (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 12 V mA Continuous Drain Current (Note 6) VGS = 4.5V Continuous Drain Current (Note 6) VGS = 1.8V Steady State TA = +25C TA = +70C ID 1030 800 t<10s TA = +25C TA = +70C ID 1150 900 mA Steady State TA = +25C TA = +70C ID 740 570 mA t<10s TA = +25C TA = +70C ID 870 700 mA Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode Continuous Current IDM 3 A IS 800 mA Units Maximum Ratings - Q2 P-CHANNEL (@TA = +25C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS 8 V Continuous Drain Current (Note 6) VGS = -4.5V Continuous Drain Current (Note 6) VGS = -1.8V Steady State TA = +25C TA = +70C ID -700 -550 mA t<10s TA = +25C TA = +70C ID -820 -640 mA Steady State TA = +25C TA = +70C ID -460 -350 mA t<10s TA = +25C TA = +70C ID -550 -420 mA Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode Continuous Current IDM -2 A IS -800 mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady state t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady state t<10s Operating and Storage Temperature Range DMC2400UV Document number: DS35537 Rev. 7 - 2 2 of 10 www.diodes.com Symbol Value PD 0.45 Units W RJA 281 210 C/W C/W PD 1 W RJA 129 97 C/W C/W TJ, TSTG -55 to +150 C June 2013 (c) Diodes Incorporated DMC2400UV Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition BVDSS 20 -- -- V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current TJ = +25C IDSS -- -- 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS Drain-Source Breakdown Voltage -- -- 1 -- -- 4.0 A VGS = 5V, VDS = 0V VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) 0.5 -- 0.9 -- 0.3 0.48 V VGS = 5.0V, ID = 200mA -- 0.35 0.5 VGS = 4.5V, ID = 200mA -- 0.45 0.7 -- 0.55 0.9 -- 0.65 1.5 -- 2 -- VDS = VGS, ID = 250A VGS = 2.5V, ID = 200mA VGS = 1.8V, ID = 100mA VGS = 1.5V, ID = 50mA VGS = 1.2V, ID = 1mA Forward Transfer Admittance |Yfs| -- 1.4 -- S VDS = 3V, ID = 200mA Diode Forward Voltage VSD -- 0.7 1.2 V VGS = 0V, IS = 500mA, pF VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, nC VGS = 4.5V, VDS = 10V, ID = 250mA ns VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA DYNAMIC CHARACTERISTICS (Note 8) Ciss -- 37.1 -- Output Capacitance Coss -- 6.5 -- Reverse Transfer Capacitance Crss -- 4.8 -- Gate Resistance Rg -- 68 -- Total Gate Charge Qg -- 0.5 -- Gate-Source Charge Qgs -- 0.07 -- Gate-Drain Charge Qgd -- 0.1 -- Turn-On Delay Time tD(on) -- 4.06 -- Turn-On Rise Time tr -- 7.28 -- Turn-Off Delay Time tD(off) -- 13.74 -- tf -- 10.54 -- Input Capacitance Turn-Off Fall Time Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 1.5 2.0 VGS = 4.5V VGS = 2.5V 1.5 VDS = 5V VGS = 2.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics - Q1 N-CHANNEL (@TA = +25C, unless otherwise specified.) VGS = 1.8V 1.0 VGS = 1.5V 0.5 1.0 0.5 T A = 150C TA = 125C T A = 85C 0 VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMC2400UV Document number: DS35537 Rev. 7 - 2 5 0 TA = 25C TA = -55C 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 3 of 10 www.diodes.com June 2013 (c) Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.0 1.6 VGS = 1.5V 1.2 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 0.8 VGS = 4.5V 0.6 TA = 150C T A = 125C 0.4 TA = 85C TA = 25C 0.2 0 TA = -55C 0 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 0.4 VGS = 2.5V ID = 500mA 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 1.6 1.2 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMC2400UV ID = 1mA 0.8 ID = 250A 0.6 0.4 1.2 T A = 25C 0.8 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMC2400UV Document number: DS35537 Rev. 7 - 2 4 of 10 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2013 (c) Diodes Incorporated 60 C, CAPACITANCE (pF) 40 Ciss 30 20 10 0 Coss C rss 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 20 1,000 TA = 150C 100 T A = 125C 10 T A = 85C TA = 25C 1 TA = -55C 0.1 5 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 10 PW = 100s 4 VDS = 10V ID = 250mA ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT 50 f = 1MHz IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) DMC2400UV 3 2 1 PW = 10s RDS(on) Limited DC PW = 10s 0.1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 1 0 0 0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMC2400UV Document number: DS35537 Rev. 7 - 2 0.6 0.001 0.01 5 of 10 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 June 2013 (c) Diodes Incorporated DMC2400UV Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS -20 -- -- -- -- -- -- -- -- -100 1.0 5.0 V nA |Yfs| VSD -0.5 -- -- -- -- -- -- -- -- -- 0.67 0.7 0.9 1.2 1.5 5 0.7 -0.75 -1.0 0.97 1.0 1.5 2.0 3.0 -- -- -1.2 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf -- -- -- -- -- -- -- -- -- -- -- -- 46.1 7.2 4.9 14.3 0.5 0.85 0.09 0.09 8.5 4.3 20.2 19.2 -- -- -- -- -- -- -- -- -- -- -- -- IGSS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = -4.5V Total Gate Charge VGS = -10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time A V S V Test Condition VGS = 0V, ID = -1mA VDS = -20V, VGS = 0V VGS = 5V, VDS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = -250A VGS = -5V, ID = -100mA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -80mA VGS = -1.8V, ID = -40mA VGS = -1.5V, ID = -30mA VGS = -1.2V, ID = -1mA VDS = -3V, ID = -100mA VGS = 0V, IS = -330mA, pF VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, nC VDS = -10V, ID = -250mA ns VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 1.0 1.0 0.8 0.8 -ID, DRAIN CURRENT (A) Notes: -ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics - Q2 P-CHANNEL (@TA = +25C, unless otherwise specified.) 0.6 0.4 0.2 0.6 0.4 0.2 T A = 125 C 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 13 Typical Output Characteristics DMC2400UV Document number: DS35537 Rev. 7 - 2 5 6 of 10 www.diodes.com 0 0 1 2 3 -VGS, GATE SOURCE VOLTAGE(V) Fig. 14 Typical Transfer Characteristics 4 June 2013 (c) Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 2.0 1.8 1.6 1.4 VGS = -1.8V 1.2 1.0 VGS = -2.5V 0.8 0.6 VGS = -4.5V 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -ID, DRAIN SOURCE CURRENT Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage 0.01 0.1 1 -ID, DRAIN SOURCE CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and Temperature 10 2.0 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 150C 1.4 1.6 1.5 1.0 0.5 -IS, SOURCE CURRENT (A) ID= 300A 0.8 0.6 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) Fig. 18 On-Resistance vs.Temperature 150 1.0 1.0 -VGS(th), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMC2400UV ID= 250A 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 19 Gate Threshold Variation vs. Ambient Temperature DMC2400UV Document number: DS35537 Rev. 7 - 2 7 of 10 www.diodes.com 0.8 0.6 TA = 25C 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 20 Diode Forward Voltage vs. Current June 2013 (c) Diodes Incorporated DMC2400UV 80 1,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) TA = 150 C 60 Ciss 40 20 Coss 0 100 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Junction Capacitance TA = 85C TA = 25C 1 Crss 0 TA = 125C 10 0.1 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 22 Typical Drain-Source Leakage Current vs. Voltage 20 0 10 8 PW = 100s 7 VDS = -10V ID = -250mA 6 -ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) 5 4 3 2 1 PW = 10s RDS(on) Limited DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms 0.01 1 0 0 0.001 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg, TOTAL GATE CHARGE (nC) Fig. 23 Gate-Charge Characteristics 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 24 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 275C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.000001 0.00001 DMC2400UV Document number: DS35537 Rev. 7 - 2 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 25 Transient Thermal Response 8 of 10 www.diodes.com 10 100 1,000 June 2013 (c) Diodes Incorporated DMC2400UV Package Outline Dimensions ADVANCE INFORMATION NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMC2400UV Document number: DS35537 Rev. 7 - 2 9 of 10 www.diodes.com June 2013 (c) Diodes Incorporated DMC2400UV ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2013, Diodes Incorporated www.diodes.com DMC2400UV Document number: DS35537 Rev. 7 - 2 10 of 10 www.diodes.com June 2013 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: DMC2400UV-13