©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
BCW89
Absolute Maximum Ratings * TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage -60 V
VCES Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector current - Continuous -500 mA
TJ, Tstg Junct ion and Storage Temperature -55 ~ +150 °C
Symbol Parame ter Test C ondition Min. Max. Units
Off Characteristics
V(BR)CBO Collector-B ase Break down Volt age IC = -10µA, IE = 0 -80 V
V(BR)CEO Collector-E mitter Break down Volt age IC = -2.0mA, IB = 0 -60 V
V(BR)CES Collector-E mitter Break down Volt age IC = -10µA, IE = 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = -10µA, IC = 0 -5.0 V
ICBO Collector Cutoff Current VCB = -20V, IE = 0
VCB = -20V, IE = 0, TA = +100°C-100
-10 nA
µA
On Characteristics
hFE DC Current Gain VCE = -5.0V, IC = -2.0mA 120 260
VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -0.5mA -0.3 V
VBE(on) B a se-E mitter On Voltage VCE = -5.0V, IC = -2.0mA -0. 6 -0. 75 V
Small Signal Characteristics
NF Noise Figure VCE = -5.0V, IC = -200µA
RS = 2.0kΩ, f = 1.0kHz
BW = 200Hz
10 dB
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
BCW89
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
1. Base 2. Emitter 3. Collector
1
2
3
SOT-23
Mark: H 3
Package Dimensions
BCW89
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
SOT-23
©2003 Fairchild Semiconductor Corporation Rev. I2
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