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MIL-M-38510/8F
1.2.4 Absolute maximum ratings.
Supply voltage range ...................................................... -0.5 V dc to +7.0 V dc
Input voltage range ......................................................... -1.5 V dc at -12 mA to +5.5 V dc
Storage temperature range ............................................ -65°C to +150°C
Maximum power dissipation per gate, PD 1/ ................ 54 mW dc per buffer
Lead temperature (soldering 10 seconds) ...................... 300°C
Thermal resistance, junction-to-case (θJC) ..................... (See MIL-STD-1835)
Junction temperature (TJ ) 2/ 175°C
1.2.5 Recommended operating conditions.
Supply voltage (VCC) ....................................................... 4.5 V dc minimum to 5.5 V dc maximum
Minimum high level input voltage (VIH) ........................... 2.0 V dc
Maximum low level input voltage (VIL) ............................ 0.8 V dc
Normalized fanout (each output) 3/ :
Device types 01, 02, 03, and 04 ............................ 18 maximum
Device type 05 ....................................................... 10 maximum
Case operating temperature range (TC ) ......................... -55°C to 125°C
2.0 APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification.
This section does not include documents cited in other sections of this specification or recommended for
additional information or as examples. While every effort has been made to ensure the completeness of this
list, document users are cautioned that they must meet all specified requirements of documents cited in
sections 3, 4, or 5 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications and standards. The following specifications and standards form a part of this specification to
the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard for Microelectronics.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or
http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
1/ Must withstand the added PD due to short circuit condition (e.g. IOS) at one output for 5 seconds duration.
2/ Maximum junction temperature should not be exceeded except in accordance with allowable short
duration burn-in screening condition in accordance with MIL-PRF-38535.
3/ The device will fanout in both high and low levels to the specified number of inputs of the same device
type as that being tested.
2