© Semiconductor Components Industries, LLC, 2012
March, 2012 − Rev. 12
1Publication Order Number:
MUN5111T1/D
MUN5111T1 Series,
SMUN5111T1,
NSVMUN5111T1Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC−70/SOT−323
CASE 419
STYLE 3
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
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6x = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
6x MG
G
1
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°C/W
Thermal Resistance, Junction-to-Ambient RqJA 618 (Note 1)
403 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead RqJL 280 (Note 1)
332 (Note 2)
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping†
MUN5111T1G,
SMUN5111T1G
SC−70/SOT−323
(Pb−Free)
6A 10 10 3,000/Tape & Reel
MUN5112T1G,
SMUN5112T1G
SC−70/SOT−323
(Pb−Free)
6B 22 22 3,000/Tape & Reel
MUN5113T1G,
SMUN5113T1G
SC−70/SOT−323
(Pb−Free)
6C 47 47 3,000/Tape & Reel
MUN5113T3G SC−70/SOT−323
(Pb−Free)
6C 47 47 10,000/Tape & Reel
MUN5113T1G SC−70/SOT−323
(Pb−Free)
6C 47 47 3,000/Tape & Reel
MUN5114T1G,
SMUN5114T1G
SC−70/SOT−323
(Pb−Free)
6D 10 47 3,000/Tape & Reel
MUN5115T1G (Note 3) SC−70/SOT−323
(Pb−Free)
6E 10 ∞3,000/Tape & Reel
MUN5116T1G (Note 3) SC−70/SOT−323
(Pb−Free)
6F 4.7 ∞3,000/Tape & Reel
MUN5130T1G (Note 3) SC−70/SOT−323
(Pb−Free)
6G 1.0 1.0 3,000/Tape & Reel
MUN5131T1G (Note 3) SC−70/SOT−323
(Pb−Free)
6H 2.2 2.2 3,000/Tape & Reel
MUN5132T1G,
NSVMUN5132T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6J 4.7 4.7 3,000/Tape & Reel
MUN5133T1G,
SMUN5133T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6K 4.7 47 3,000/Tape & Reel
MUN5134T1G (Note 3) SC−70/SOT−323
(Pb−Free)
6L 22 47 3,000/Tape & Reel
MUN5135T1G (Note 3) SC−70/SOT−323
(Pb−Free)
6M 2.2 47 3,000/Tape & Reel
MUN5136T1G SC−70/SOT−323
(Pb−Free)
6N 100 100 3,000/Tape & Reel
MUN5137T1G SC−70/SOT−323
(Pb−Free)
6P 47 22 3,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5113T1, SMUN5113T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5113T1, SMUN5113T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA)
MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
MUN5115T1/MUN5116T1/MUN5132T1/NSVMUN5132T1/
MUN5133T1/SMUN5133T1/MUN5134T1
VCE(sat)
−
−
−
−
0.25
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MUN5113T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
MUN5136T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
MUN5137T1
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN5130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
VOH
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5113T1, SMUN5113T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
Resistor Ratio
MUN5111T1/SMUN5111T1/MUN5112T1/SMUN5112T1/
MUN5113T1/SMUN5113T1/MUN5136T1
MUN5114T1/SMUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1/NSVMUN5132T1
MUN5133T1/SMUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R1/R20.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RqJA = 833°C/W
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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5
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1G, SMUN5111T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1G, SMUN5112T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1G, SMUN5113T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
50
IC/IB = 10
TA=-25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1G, SMUN5114T1G
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1G, NSVMUN5132T1G
−25°C
75°C
25°C
−25°C
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. Input Voltage versus Output Current
IC, OUTPUT CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
IC, COLLECTOR CURRENT (mA)
120200
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
10
4
6050403020100
0
Cob, CAPACITANCE (pF)
1
2
5
7
100
6543210
0.01
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
302520151050
0.1
1
454035 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
75°C
25°C
75°C
25°C
40 60 80 100
3
6
8
9
0.1
−25°C
−25°C
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1G, SMUN5133T1G
75°C
25°C
−25°C
Figure 28. VCE(sat) versus ICFigure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
5
1
3
7
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135T1G
75°C
25°C
−25°C
Figure 33. VCE(sat) versus ICFigure 34. DC Current Gain
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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12
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1G
75°C
25°C
−25°C
Figure 38. Maximum Collector Voltage versus
Collector Current
Figure 39. DC Current Gain
Figure 40. Output Capacitance Figure 41. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 42. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = −25°C
VCE = 10 V
75°C
25°C
TA = −25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = −25°C
f = 1 MHz
IE = 0 V
TA = 25°C
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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13
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1G
Figure 43. Maximum Collector Voltage versus
Collector Current
Figure 44. DC Current Gain
Figure 45. Output Capacitance Figure 46. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 47. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2
f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = −25°C
VO = 5 V
75°C
25°C
TA = −25°C
VO = 0.2 V
75°C
25°C
TA = −25°C
IC/IB = 10
VCE = 10 V
75°C
25°C
TA = −25°C
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
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14
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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