TOSHIBA 4N35,4N36,4N37(Short) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N35(Short), 4N36(Short), 4N37(Short) AC LINE/ DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/ DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR. The TOSHIBA 4N35 (Short) through 4N37 (Short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. Switching Speeds : 3s (Typ.) @ DC Current Transfer Ratio : 100% (Min.) e Isolation Resistance : 1010, (Min.) @ Isolation Voltage : 2500Vrms (Min.) @ UL Recognized : UL1577, File No. E67349 Unit in mm 6 5 4 7 sr Ir uD Ow S +H + o a} ia Gm 1 2 3 2g 7.124025, 3 7.62 + 0.25 wo oO 6 w N +o 7 +l 0.1 fa) .25 -0.05 IS 0.25 -0.05 J t 05+0.1 1.240152 2 7.85 ~ 8.80 2.54 + 0.25 al 11-7A8 TOSHIBA 11-7A8 Weight : 0.4g PIN CONFIGURATIONS (Top view) i0 16 ook Ts 30 4 1 : ANODE 2: CATHODE 3: N.C. 4 ; EMITTER 5 : COLLECTOR 6 : BASE 961001EBC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to foreign exchange and foreign trade control laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-27 1/6TOSHIBA 4N35,4N36,4N37(Short) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING | UNIT Forward Current (Continuous) Ip 60 mA Forward Current Derating Alp/C 0.8 (*) |mA/C A Peak Forward Current (Note 1) IpF 3 A -1 |Power Dissipation Pp 100 mW Power Dissipation Derating APD /C 1.33 (*) ImW/C Reverse Voltage VR 6 Vv m | Collector-Emitter Voltage BVCEO 30 Vv 2 Collector-Base Voltage BVCBO 70 V t | Emitter-Collector Voltage BVECO 7 Vv | Collector Current (Continuous) Ic 100 mA a Power Dissipation Pc 300 mW A |Power Dissipation Derating 4Pc/C 4.0 (*) mW/C Storage Temperature Tstg 55~150 C Operating Temperature Topr 55~100 C cq |Lead Soldering Temperature (at 10s) Tsol 260 C & |Total Package Power Dissipation Py 300 mW . Total Package Power Dissipation . APy/C 3.3 (*) mw/C > | Derating 3 BVg 2500 Vrms Input to Output Isolation 4N35 2500 / 3550 Vims/ Voltage (AC, 1 Minute) 4N36 | BVg (**) | 1750/2500 Vpk 4N37 1050 / 1500 (Note 1) Pulse width 1s, 300pps (*) Above 25C ambient. (**) JEDEC registered maximum BVg, however, TOSHIBA specifies a maxium BVg of 2500Vrms, 1 minute. 1998-02-27 2/6TOSHIBA 4N35,4N36,4N37(Short) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Ip=10mA 0.8 | 1.15) 15 Q | Forward Voltage VP Ip=10mA, Ta= 55C 09 | 1.7 Vv ca Ifp=10mA, Ta=100C 0.7 _ 1.4 1 lReverse Current IR VR=6vV 10 | A Capacitance Cp V=0, f=1MHz 30 | 100 | pF DC Forward Current Gain | hprp VcE=5V, I=500nA 200 | Collector-Emitter Ic=10mA 24 Breakdown Voltage V (BR) CEO|1c=10m 30 Vv |Collector-Base Breakdown _ fH Voltage V (BR) CBO| Ic =100uA 70 Vv Emitter-Collector ca = _ _ H | Breakdown Voltage V (BR) ECO) l= 100nA 7 Vv 5 Collector Dark Current ICEO VcCE=10V 1 50 | nA Collector Dark Current ICEO VCE=30V, Ta=100C _ | 500 | A Collector-Emitter Capacitance CCE V=0, f=1MHz _ 10} | pF Ip=10mA, VcR=10V 100 Ip=10mA, VcR=10V 40 Current Transfer Ratio Ic/Ip |Ta=55C i i % Ip=10mA, VcR=10V 40 _ _ Ta=100C A | Collector-Emitter a Saturation Voltage VCE (sat) |Ir=10mA, Ic =0.5mA 0.1 | 0.3 Vv A, | Capacitance Input to an pe P Output Cs Vs=0, f=1MHz _ 0.8 2.9 pF > [Isolation Resistance Rg Vg=500V, R. H. =60% 10% | _ QO Input to Output 4N35 Vip =3550Vpk 100 Isolation Current 4N36 | Io Vio =2500Vpk 100 | pA (Pulse Width=8ms)| 4N37 Vio =1500Vpk 100 Turn-On Time tON Vcc=10V, Ic=2mA 3 10 Turn-Off Time torr | Rp,=1000 _ 3/10, 1998-02-27 3/6TOSHIBA 4N35,4N36,4N37(Short) If Ta Pc Ta be z a & = [oa & ze Q a fe oD << ao Be a reo as Ef CE & Z ae a QF 3 3 2 - 0 0 -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Irp DR If VE < g PULSE WIDTH< Lys Ta = 25C & Ta =25C 4 a & A a & 2, > & 3 a 2 2 BS 2 & < 9 E i z a 17) > ray 10-8 10-2 10-1 10 0.6 0.8 1.0 12 1.4 16 18 DUTY CYCLE RATIO DR FORWARD VOLTAGE Vp (V) AVF/ATa IF IFp VFP 1000 a 500 300 100 50 30 10 PULSE WIDTH= 10s REPETITIVE FREQUENCY FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mV/C) PULSE FORWARD CURRENT Ipp =100Hz Ta=25C 1 0.1 0.3 1 3 10 30 0.6 1.0 1.4 1.8 2.2 2.6 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE VFp (V) 1998-02-27 4/6TOSHIBA COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) Ta=25C VcE=10V e--- VoE=0.4V 5 SAMPLE A 0.1 60 -40 3 FORWARD CURRENT Ip (mA) 20 0 Ic IF 10 Ic Ta 20 40 30 60 AMBIENT TEMPERATURE Ta 80 100 100 CURRENT TRANSFER RATIO Ic/Ip (%) COLLECTOR CURRENT Ic (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VcE gat) (V) S a S ee 2 im S 2 aH eS 2 & 4N35,4N36,4N37(Short) Ic/IF - IF Ta=25C VcEe=10V 2--- VCE=0.4V SAMPLE A SAMPLE B 3 10 30 100 300 FORWARD CURRENT Ip (nA) Ic VCE 20mA 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE Vcr (V) VCE (sat) Ta Ip=10mA I=0.5mA -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (@C) 1998-02-27 5/6TOSHIBA 4N35,4N36,4N37(Short) COLLECTOR DARK CURRENT IgR9 (A) SWITCHING TIME (us) IcEO - Ta 10+ Vor=24V 10 1071 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) SWITCHING CHARACTERISTICS Ry, TED TI 1000 Voc=5Vv RL 500 ve VouT 300 100 50 30 10 0.5 1 3 10 30 LOAD RESISTANCE Ry (kQ) TcEO A) COLLECTOR DARK CURRENT SWITCHING TIME (us) IcEO RBE 10 ow oO 0.5 0.3 0.1 0.05 0.03 100k 1M 10M % BASE-EMITTER RESISTANCE Rep (Q) SWITCHING CHARACTERISTICS RBE TURATED OPERATIO Vec=5V Ip ot 4.3k0, Ip & Vout o_! Ta=25C VOUT 100 50 30 10 1 3M 1M 300k 100k 30k 10k BASE-EMITTER RESISTANCE Rpg ({) 1998-02-27 6/6