BXY43
IFAG IMM RPD D HIR 1 of 5 V2, February 2011
HiRel Silicon PIN Diode
HiRel Discrete and Microwave
Semiconductor
Current controlled RF resistor for RF
attenuators and switches
High reverse voltage
Hermetically sealed microwave
package
Space Qualified
ESA/SCC Detail Spec. No.: 5513/030
Type Variant No.s 01 to 03
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
Package
BXY43-T (ql)
-
see below
1 2
T
BXY43-T1 (ql)
1 2
T1
(ql) Quality Level: P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
T
T1
BXY43
IFAG IMM RPD D HIR 2 of 5 V2, February 2011
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse Voltage
VR
150
V
Forward Current
IF
400
mA
Power Dissipation 1)
Ptot
500
mW
Operating Temperature Range
Top
-55 to +150
°C
Storage Temperature Range
Tstg
-65 to +175
°C
Soldering Temperature 2)
Tsol
+235
°C
Junction Temperature
Tj
150
°C
Thermal Resistance Junction-Case
BXY43-T
BXY43-T1
Rth(j-c)
100
125
K/W
Notes.:
1.) For BXY43-T: At TCASE = 100 °C. For TCASE > 100 °C derating is required.
For BXY43-T1: At TCASE = 87,5 °C. For TCASE > 87,5 °C derating is required.
2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have
elapsed.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse Current 1
VR1=150V
IR1
-
-
100
nA
Reverse Current 2
VR2=100V
IR2
-
-
10
nA
Forward Voltage
IF=100mA
VF
-
0,97
1
V
BXY43
IFAG IMM RPD D HIR 3 of 5 V2, February 2011
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Total Capacitance
VR=50V; f=1MHz
BXY43-T, -T1
CT
-
0,3
0,45
pF
Forward Resistance 1
f=100MHz, IF1=20µA
RF1
-
55
70
Forward Resistance 2
f=100MHz, IF2=1mA
RF2
-
2,2
3,0
Forward Resistance 3
f=100MHz, IF3=10mA
RF3
-
0,9
1,5
Minority Carrier Lifetime
IF=10mA, IR=6mA, IR=3mA
τL
250
650
ns
BXY43
IFAG IMM RPD D HIR 4 of 5 V2, February 2011
T Package
B
C
X1
Y1 Y2
A
12
Symbol
Millimetre
min
max
A
1,30
1,45
B
1,15
1,35
C
-
0,40
T1 Package
B
C
Y1 Y2
X1
G
D
H
A
E
F
G
12
Symbol
Millimetre
min
max
A
1,30
1,45
B
1,15
1,35
C
-
0,40
D
0,10
0,50
E
-
0,30
F
0,06
0,10
G
5,50
-
H
0,40
0,60
BXY43
IFAG IMM RPD D HIR 5 of 5 V2, February 2011
Edition 2011-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
