2001. 6. 20 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK596
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 1
CONDENSER MICROPHONE APPLICATION.
FEATURES
ᴌExpecially Suited for Use in Audio, Telephone.
ᴌCapacitor Microphones.
ᴌExcellent Voltage Characteristics.
ᴌExcellent Transient Characteristics.
MAXIMUM RATING (Ta=25ᴱ)
123
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. SOURCE
2. GATE
3. DRAIN
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
EE
L
N
M
C
H
0.80
O 0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDO -20 V
Gate Current IG10 mA
Drain Current ID1 mA
Drain Power Dissipation PD400 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage V(BR)GDO IG=-100ỌA-20 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=1ỌA- -0.6 -1.5 V
Drain Current IDSS (Note) VDS=5V, VGS=0 100 - 480 ỌA
Foward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz 0.4 1.2 - mS
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz - 3.5 - pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz - 0.65 - pF
Note : IDSS Classification A:100ᴕ170 , B:150ᴕ240, C:210ᴕ350 , D:320ᴕ480