 
  
FEATURES DESCRIPTION
APPLICATIONS
0.1HzTO10HzNOISE
500nV/div
1s/div
1
2
3
5
4
V+
-IN
OUT
V-
+IN
OPA333
SOT23-5
1
2
3
5
4
V+
OUT
+IN
V-
-IN
OPA333
SC70-5
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
1.8V, microPOWERCMOS OPERATIONAL AMPLIFIERSZerø-Drift Series
LOW OFFSET VOLTAGE: 10 μV (max)
The OPA333 series of CMOS operational amplifiersuses a proprietary auto-calibration technique toZERO DRIFT: 0.05 μV/ °C (max)
simultaneously provide very low offset voltage (10 μV0.01Hz to 10Hz NOISE: 1.1 μV
PP
max) and near-zero drift over time and temperature.QUIESCENT CURRENT: 17 μA
These miniature, high-precision, low quiescentSINGLE-SUPPLY OPERATION current amplifiers offer high-impedance inputs thathave a common-mode range 100mV beyond the railsSUPPLY VOLTAGE: 1.8V to 5.5V
and rail-to-rail output that swings within 50mV of theRAIL-TO-RAIL INPUT/OUTPUT
rails. Single or dual supplies as low as +1.8V ( ±0.9V)microSIZE PACKAGES: SC70 and SOT23
and up to +5.5V ( ±2.75V) may be used. They areoptimized for low-voltage, single-supply operation.
The OPA333 family offers excellent CMRR withoutTRANSDUCER APPLICATIONS
the crossover associated with traditionalTEMPERATURE MEASUREMENTS complementary input stages. This design results insuperior performance for driving analog-to-digitalELECTRONIC SCALES
converters (ADCs) without degradation of differentialMEDICAL INSTRUMENTATION
linearity.BATTERY-POWERED INSTRUMENTS
The OPA333 (single version) is available in theHANDHELD TEST EQUIPMENT
SC70-5, SOT23-5, and SO-8 packages. TheOPA2333 (dual version) is offered in DFN-8 (3mm ×3mm), MSOP-8, and SO-8 packages. All versionsare specified for operation from –40 °C to +125 °C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2006–2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS
(1)
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may bemore susceptible to damage because very small parametric changes could cause the device not to meet its publishedspecifications.
ORDERING INFORMATION
(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING
SOT23-5 DBV OAXQOPA333 SC70-5 DCK BQYSO-8 D O333ASO-8 D O2333AOPA2333 DFN-8 DRB BQZMSOP-8 DGK OBAQ
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TIweb site at www.ti.com .
OPA333, OPA2333 UNIT
Supply Voltage +7 VSignal Input Terminals, Voltage
(2)
–0.3 to (V+) + 0.3 VSignal Input Terminals, Voltage
(2)
±10 mAOutput Short-Circuit
(3)
ContinuousOperating Temperature –40 to +150 °CStorage Temperature –65 to +150 °CJunction Temperature +150 °CESD Ratings:
Human Body Model (HBM) 4000 VCharged Device Model (CDM) 1000 VMachine Model (MM) 400 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not supported.(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails shouldbe current limited to 10mA or less.(3) Short-circuit to ground, one amplifier per package.
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ELECTRICAL CHARACTERISTICS: V
S
= +1.8V to +5.5V
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
Boldface limits apply over the specified temperature range, T
A
= –40 °C to +125 °C.At T
A
= +25 °C, R
L
= 10k connected to V
S
/2, V
CM
= V
S
/2, and V
OUT
= V
S
/2, unless otherwise noted.
OPA333, OPA2333
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
Input Offset Voltage V
OS
V
S
= +5V 2 10 μV
vs Temperature dV
OS
/dT 0.02 0.05 μV/ °C
vs Power Supply PSRR V
S
= +1.8V to +5.5V 1 5 μV/V
Long-Term Stability
(1)
See
(1)
Channel Separation, dc 0.1 μV/V
INPUT BIAS CURRENT
Input Bias Current I
B
±70 ±200 pA
over Temperature ±150 pA
Input Offset Current I
OS
±140 ±400 pA
NOISE
Input Voltage Noise, f = 0.01Hz to 1Hz 0.3 μV
PP
Input Voltage Noise, f = 0.1Hz to 10Hz 1.1 μV
PP
Input Current Noise, f = 10Hz i
n
100 fA/ Hz
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V
CM
(V–) 0.1 (V+) + 0.1 V
Common-Mode Rejection Ratio CMRR (V–) 0.1V < V
CM
< (V+) + 0.1V 106 130 dB
INPUT CAPACITANCE
Differential 2 pF
Common-Mode 4 pF
OPEN-LOOP GAIN
(V–) + 100mV < V
O
< (V+) 100mV, R
L
=Open-Loop Voltage Gain A
OL
106 130 dB10k
FREQUENCY RESPONSE
Gain-Bandwidth Product GBW C
L
= 100pF 350 kHz
Slew Rate SR G = +1 0.16 V/ μs
OUTPUT
Voltage Output Swing from Rail R
L
= 10k 30 50 mV
over Temperature R
L
= 10k 70 mV
Short-Circuit Current I
SC
±5 mA
Capacitive Load Drive C
L
See Typical Characteristics
Open-Loop Output Impedance f = 350kHz, I
O
= 0 2 k
POWER SUPPLY
Specified Voltage Range V
S
1.8 5.5 V
Quiescent Current Per Amplifier I
Q
I
O
= 0 17 25 μA
over Temperature 28 μA
Turn-On Time V
S
= +5V 100 μs
TEMPERATURE RANGE
Specified Range –40 +125 °C
Operating Range –40 +150 °C
Storage Range –65 +150 °C
Thermal Resistance θ
JA
°C/W
SOT23-5 200 °C/W
MSOP-8, SO-8 150 °C/W
DFN-8 50 °C/W
SC70-5 250 °C/W
(1) 300-hour life test at +150 °C demonstrated randomly distributed variation of approximately 1 μV.
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PIN CONFIGURATIONS
1
2
3
5
4
V+
-IN
OUT
V-
+IN
1
2
3
5
4
V+
OUT
+IN
V-
-IN
1
2
3
4
8
7
6
5
NC(1)
V+
OUT
NC(1)
NC(1)
-IN
+IN
V-
1
2
3
4
8
7
6
5
V+
OUTB
-INB
+INB
OUTA
-INA
+INA
V-
A
B
1
2
3
4
8
7
6
5
V+
OUTB
-INB
+INB
OUTA
-INA
+INA
V-
Exposed
Thermal
DiePad
on
Underside(2)
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
OPA333 OPA333 OPA333
SOT23-5 SO-8 SC70-5Top View Top View Top View
OPA2333 OPA2333
SO-8, MSOP-8 DFN-8Top View Top View
1. NC denotes no internal connection.
2. Connect thermal die pad to V–.
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TYPICAL CHARACTERISTICS
Population
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
OffsetVoltage( V)m
Population
0
0.0025
0.0050
0.0075
0.0100
0.0125
0.0150
0.0175
0.0200
0.0225
0.0250
0.0275
0.0300
0.0325
0.0350
0.0375
0.0400
0.0425
0.0450
0.0475
0.0500
OffsetVoltageDrift( V/ C)m °
CMRR(dB)
1
140
120
100
80
60
40
20
0
100k10k1k10010
Frequency(Hz)
1M
PSRR(dB)
1
120
100
80
60
40
20
0
10k 100k1k10010
Frequency(Hz)
1M
+PSRR
-PSRR
OutputSwing(V)
0
3
2
1
0
-1
-2
-3
1
OutputCurrent(mA)
107 8 965432
- °40 C
- °40 C
- °40 C
+25 C°
+25 C°
+25 C°
+125 C°
+125 C°
V = 2.75V±
S
V = 0.9V±
S
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
At T
A
= +25 °C, V
S
= +5V, and C
L
= 0pF, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTION OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
Figure 1. Figure 2.
OPEN-LOOP GAIN vs FREQUENCY COMMON-MODE REJECTION RATIO vs FREQUENCY
Figure 3. Figure 4.
POWER-SUPPLY REJECTION RATIO vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
Figure 5. Figure 6.
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I(pA)
B
0
100
80
60
40
20
0
-20
-40
-60
-80
-100
1
Common-ModeVoltage(V)
5432
-IB
+IB
I(pA)
B
-50
200
150
100
50
0
-50
-100
-150
-200
-25
Temperature( C)°
1251007550250
V =5.5V
S
V =1.8V
S
-IB
-IB
+IB
+IB
OutputVoltage(1V/div)
Time(50 s/div)m
G=1
R =10kW
L
I ( A)m
Q
-50
25
20
15
10
5
0
-25
Temperature( C)°
1251007550250
V =1.8V
S
V =5.5V
S
OutputVoltage(50mV/div)
Time(5 s/div)m
G=+1
R =10kW
L
2V/div
0
1V/div
0
Time(50 s/div)m
Input
Output
10kW
1kW
OPA333
+2.5V
-2.5V
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
TYPICAL CHARACTERISTICS (continued)At T
A
= +25 °C, V
S
= +5V, and C
L
= 0pF, unless otherwise noted.
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE INPUT BIAS CURRENT vs TEMPERATURE
Figure 7. Figure 8.
QUIESCENT CURRENT vs TEMPERATURE LARGE-SCALE STEP RESPONSE
Figure 9. Figure 10.
SMALL-SCALE STEP RESPONSE POSITIVE OVER-VOLTAGE RECOVERY
Figure 11. Figure 12.
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2V/div
0
1V/div
0
Time(50 s/div)m
Input
Output
10kW
1kW
OPA333
+2.5V
-2.5V
SettlingTime( s)
m
1
600
500
400
300
200
100
0
10
Gain(dB)
100
0.001%
0.01%
4VStep
500nV/div
1s/div
Overshoot(%)
10
40
35
30
25
20
15
10
5
0
100
LoadCapacitance(pF)
1000
VoltageNoise(nV/ )ÖHz
1
1000
100
10
CurrentNoise(fA/ )ÖHz
1000
100
10
1k10010
Frequency(Hz)
10k
CurrentNoise
VoltageNoise
Continueswithno1/f(flicker)noise.
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
TYPICAL CHARACTERISTICS (continued)At T
A
= +25 °C, V
S
= +5V, and C
L
= 0pF, unless otherwise noted.
NEGATIVE OVER-VOLTAGE RECOVERY SETTLING TIME vs CLOSED-LOOP GAIN
Figure 13. Figure 14.
SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE 0.1Hz TO 10Hz NOISE
Figure 15. Figure 16.
CURRENT AND VOLTAGE NOISE SPECTRAL DENSITY vsFREQUENCY
Figure 17.
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APPLICATIONS INFORMATION
INPUT VOLTAGE
5kW
OPA333
10mAmax
+5V
VIN
VOUT
IOVERLOAD
Current-limitingresistor
requiredifinputvoltage
exceedssupplyrailsby
³0.5V.
OPERATING VOLTAGE
INTERNAL OFFSET CORRECTION
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
The OPA333 and OPA2333 are unity-gain stable andfree from unexpected output phase reversal. Theyuse a proprietary auto-calibration technique to
The OPA333 and OPA2333 input common-modeprovide low offset voltage and very low drift over time
voltage range extends 0.1V beyond the supply rails.and temperature. For lowest offset voltage and
The OPA333 is designed to cover the full rangeprecision performance, circuit layout and mechanical
without the troublesome transition region found inconditions should be optimized. Avoid temperature
some other rail-to-rail amplifiers.gradients that create thermoelectric (Seebeck)
Normally, input bias current is about 70pA; however,effects in the thermocouple junctions formed from
input voltages exceeding the power supplies canconnecting dissimilar conductors. These
cause excessive current to flow into or out of thethermally-generated potentials can be made to
input pins. Momentary voltages greater than thecancel by assuring they are equal on both input
power supply can be tolerated if the input current isterminals. Other layout and design considerations
limited to 10mA. This limitation is easilyinclude:
accomplished with an input resistor, as shown inUse low thermoelectric-coefficient conditions
Figure 18 .(avoid dissimilar metals).Thermally isolate components from powersupplies or other heat sources.Shield op amp and input circuitry from aircurrents, such as cooling fans.
Following these guidelines will reduce the likelihoodof junctions being at different temperatures, whichcan cause thermoelectric voltages of 0.1 μV/ °C orhigher, depending on materials used.
Figure 18. Input Current ProtectionThe OPA333 and OPA2333 op amps operate over apower-supply range of +1.8V to +5.5V ( ±0.9V to±2.75V). Supply voltages higher than +7V (absolutemaximum) can permanently damage the device.
The OPA333 and OPA2333 op amps use anParameters that vary over supply voltage or
auto-calibration technique with a time-continuoustemperature are shown in the Typical Characteristics
350kHz op amp in the signal path. This amplifier issection of this data sheet.
zero-corrected every 8 μs using a proprietarytechnique. Upon power-up, the amplifier requiresapproximately 100 μs to achieve specified V
OSaccuracy. This design has no aliasing or flickernoise.
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ACHIEVING OUTPUT SWING TO THE OP
GENERAL LAYOUT GUIDELINES
VOUT
R =20kW
P
OpAmpV =GND-
OPA333
VIN
V+=+5V
-5V
Additional
Negative
Supply
+ +
+
- -
+
4.096V
0.1 Fm
+5V
ZeroAdj.
K-Type
Thermocouple
40.7 V/ Cm °
R2
549W
R9
150kW
R5
31.6kW
R1
6.04kW
R6
200W
+5V
0.1 Fm
R2
2.94kW
VO
R3
60.4W
R4
6.04kW
OPA333
D1
REF3140
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
works with some types of output stages. TheAMP NEGATIVE RAIL OPA333 and OPA2333 have been characterized toperform with this technique; the recommendedSome applications require output voltage swings
resistor value is approximately 20k . Note that thisfrom 0V to a positive full-scale voltage (such as
configuration will increase the current consumption+2.5V) with excellent accuracy. With most
by several hundreds of microamps. Accuracy issingle-supply op amps, problems arise when the
excellent down to 0V and as low as –2mV. Limitingoutput signal approaches 0V, near the lower output
and nonlinearity occurs below –2mV, but excellentswing limit of a single-supply op amp. A good
accuracy returns as the output is again driven abovesingle-supply op amp may swing close to
–2mV. Lowering the resistance of the pull-downsingle-supply ground, but will not reach ground. The
resistor will allow the op amp to swing even furtheroutput of the OPA333 and OPA2333 can be made to
below the negative rail. Resistances as low as 10k swing to ground, or slightly below, on a single-supply
can be used to achieve excellent accuracy down topower source. To do so requires the use of another
–10mV.resistor and an additional, more negative, powersupply than the op amp negative supply. A pull-downresistor may be connected between the output andthe additional negative supply to pull the output down
Attention to good layout practices is alwaysbelow the value that the output would otherwise
recommended. Keep traces short and, whenachieve, as shown in Figure 19 .
possible, use a printed circuit board (PCB) groundplane with surface-mount components placed asclose to the device pins as possible. Place a 0.1 μFcapacitor closely across the supply pins. Theseguidelines should be applied throughout the analogcircuit to improve performance and provide benefitssuch as reducing the EMI(electromagnetic-interference) susceptibility.
Operational amplifiers vary in their susceptibility toradio frequency interference (RFI). RFI can generallybe identified as a variation in offset voltage or dcsignal levels with changes in the interfering RFsignal. The OPA333 has been specifically designedto minimize susceptibility to RFI and demonstratesFigure 19. For V
OUT
Range to Ground
remarkably low sensitivity compared to previousgeneration devices. Strong RF fields may still causevarying offset levels.The OPA333 and OPA2333 have an output stagethat allows the output voltage to be pulled to itsnegative supply rail, or slightly below, using thetechnique previously described. This technique only
Figure 20. Temperature Measurement
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R1
VEX
VOUT
VREF
R1
OPA333
R
R
R R
+5V
NOTE:1%resistorsprovideadequatecommon-moderejectionatsmallground-looperrors.
OPA333
ADS1100
Load
V
I C
2
R1
4.99kW
R3
4.99kW
R4
48.7kW
R2
49.9kW
+5V
3V
REF3130
R7
1.18kW
RSHUNT
1W
R6
71.5kWRN
56W
RN
56W
(PGAGain=4)
FS=3.0V
StrayGround-LoopResistance
ILOAD
OPA333
Output
RSHUNT
Load
V+
V+
RG
RL
R(2)
1
10kW
RBIAS
+5V
zener(1)
Twozener
biasingmethods
areshown.(3)
MOSFETratedto
stand-offsupplyvoltage
suchasBSS84for
upto50V.
(1)zenerratedforopampsupplycapability(thatis,5.1VforOPA333).
(2)Current-limitingresistor.
(3)ChoosezenerbiasingresistorordualNMOSFETs(FDG6301N,NTJD4001N,orSi1034)
NOTES:
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
Figure 21 shows the basic configuration for a bridgeamplifier.
A low-side current shunt monitor is shown inFigure 22 . R
N
are operational resistors used toisolate the ADS1100 from the noise of the digital I
2
Cbus. Since the ADS1100 is a 16-bit converter, aprecise reference is essential for maximum accuracy.If absolute accuracy is not required, and the 5Vpower supply is sufficiently stable, the REF3130 maybe omitted.
Figure 21. Single Op Amp Bridge Amplifier
Figure 22. Low-Side Current Monitor
Figure 23. High-Side Current Monitor
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V1
-In
V2
+In
R1
R2
2
3
5
6
1
R2
OPA333
OPA333
INA152
VO
V =(1+2R /R
O 2 1 2 1
)(V V )-
OPA333
3V
1MW60kW100kW
1MWNTC
Thermistor
R1
100kW
1/2
OPA2333
RA
Inverted
VCM
+VS
INA321(1)
+VS
VOUT
+VS
+VS
+VS
OPA333
+VS
1/2VS
dc
3
21
4
5
6
G =1kV/V
TOT
G =5
INA
G =200
OPA
f =150Hz
LPF
f =0.5Hz
HPF
(providesacsignalcoupling)
V =+2.7Vto+5.5V
S
BW=0.5Hzto150Hz
f =0.5Hz
O
Wilson
VCENTRAL
(RA+LA+LL)/3
7
ac
1/2VS
R2
100kW
1/2
OPA2333
LL
+VS
R3
100kW
1/2
OPA2333
LA
R4
100kW
R9
20kW
R6
100kW
RL
+VS
+VS
1/2
OPA2333
1/2
OPA2333
1/2
OPA2333
C4
1.06nF
C3
1 Fm
R14
1MW
R12
5kW
R13
318kW
R7
100kW
R8
100kW
R10
1MW
C2
0.64 Fm
R11
1MW
C1
47pF
R5
390kW
NOTE:(1)Otherinstrumentationamplifierscanbeused,
suchastheINA326,whichhaslowernoise,
buthigherquiescentcurrent.
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
Figure 24. Thermistor Measurement Figure 25. Precision Instrumentation Amplifier
Figure 26. Single-Supply, Very Low Power, ECG Circuit
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DFN PACKAGE DFN LAYOUT GUIDELINES
OPA333
OPA2333
SBOS351C MARCH 2006 REVISED MAY 2007
The OPA2333 is offered in an DFN-8 package (also The exposed leadframe die pad on the DFN packageknown as SON). The DFN is a QFN package with should be soldered to a thermal pad on the PCB. Alead contacts on only two sides of the bottom of the mechanical drawing showing an example layout ispackage. This leadless package maximizes board attached at the end of this data sheet. Refinementsspace and enhances thermal and electrical to this layout may be necessary based on assemblycharacteristics through an exposed pad. process requirements. Mechanical drawings locatedat the end of this data sheet list the physicalDFN packages are physically small, have a smaller
dimensions for the package and pad. The five holesrouting area, improved thermal performance, and
in the landing pattern are optional, and are intendedimproved electrical parasitics. Additionally, the
for use with thermal vias that connect the leadframeabsence of external leads eliminates bent-lead
die pad to the heatsink area on the PCB.issues.
Soldering the exposed pad significantly improvesThe DFN package can be easily mounted using
board-level reliability during temperature cycling, keystandard printed circuit board (PCB) assembly
push, package shear, and similar board-level tests.techniques. See Application Note QFN/SON PCB
Even with applications that have low-powerAttachment (SLUA271 ) and Application Report Quad
dissipation, the exposed pad must be soldered to theFlatpack No-Lead Logic Packages (SCBA017 ), both
PCB to provide structural integrity and long-termavailable for download at www.ti.com .
reliability.The exposed leadframe die pad on the bottom ofthe package should be connected to V– or leftunconnected.
12
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PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
OPA2333AID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA2333AIDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA2333AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-1-260C-UNLIM
OPA2333AIDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-1-260C-UNLIM
OPA2333AIDGKT ACTIVE VSSOP DGK 8 250 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-1-260C-UNLIM
OPA2333AIDGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS
& no Sb/Br) CU NIPDAUAGLevel-1-260C-UNLIM
OPA2333AIDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA2333AIDRBR ACTIVE SON DRB 8 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2333AIDRBRG4 ACTIVE SON DRB 8 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2333AIDRBT ACTIVE SON DRB 8 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2333AIDRBTG4 ACTIVE SON DRB 8 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
OPA2333AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 2
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
OPA333AIDCKR ACTIVE SC70 DCK 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDCKRG4 ACTIVE SC70 DCK 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDCKT ACTIVE SC70 DCK 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDCKTG4 ACTIVE SC70 DCK 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
OPA333AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 3
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF OPA2333, OPA333 :
Automotive: OPA2333-Q1, OPA333-Q1
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
OPA2333AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
OPA2333AIDGKT VSSOP DGK 8 250 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
OPA2333AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
OPA2333AIDRBR SON DRB 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2
OPA2333AIDRBT SON DRB 8 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2
OPA333AIDBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
OPA333AIDBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
OPA333AIDBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
OPA333AIDCKR SC70 DCK 5 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
OPA333AIDCKR SC70 DCK 5 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
OPA333AIDCKT SC70 DCK 5 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
OPA333AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 31-Aug-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
OPA2333AIDGKR VSSOP DGK 8 2500 364.0 364.0 27.0
OPA2333AIDGKT VSSOP DGK 8 250 364.0 364.0 27.0
OPA2333AIDR SOIC D 8 2500 367.0 367.0 35.0
OPA2333AIDRBR SON DRB 8 3000 367.0 367.0 35.0
OPA2333AIDRBT SON DRB 8 250 210.0 185.0 35.0
OPA333AIDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0
OPA333AIDBVR SOT-23 DBV 5 3000 203.0 203.0 35.0
OPA333AIDBVT SOT-23 DBV 5 250 180.0 180.0 18.0
OPA333AIDCKR SC70 DCK 5 3000 203.0 203.0 35.0
OPA333AIDCKR SC70 DCK 5 3000 180.0 180.0 18.0
OPA333AIDCKT SC70 DCK 5 250 180.0 180.0 18.0
OPA333AIDR SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 31-Aug-2012
Pack Materials-Page 2
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