GENERAL DESCRIPTION The TAN250A is a high power common base bipolar transistor. It is designed for pulsed TACAN systems and has 20usec pulse widths and 5% duty factors. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Surface passivation eliminates contamination and extends life. Low thermal resistance, hermetically sealed packaging reduces junction temperature, extends life and meets full military requirements. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25C Case Temperature 575 W Maximum Voltage and Current BVces Collector to Emitter Voltage 60V BVebo Emitter to Base Voltage 4.0 V k Collector Current 30A Maximum Temperatures Storage Temperature ~65 to +200C Operating JunctionTemperature 4+200 C Lead Temperature (Soldering 8 sec. time limit +260C S 1/32" from ceramic BROADBAND POWER OUTPUT VS FREQUENCY (TYPICAL) ao So 250 200 150 100 50 Volts Pin= 60 Watts Pw=20 psec Df= 5% POWER OUTPUT (WATTS PEAK) o 1000 1100 FREQUENCY (MHz) 1200 490 Race Street, San Jose, CA 95126 Phone (408) 294-4200, TWX (910) 338-2172 Ewenny Rd., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 92 AVIONICS E (2 pls) L1 DIM] Millimeter | TOL | Inches 16 o na ee EV A AUG 1987 Printed in USAELECTRICAL CHARACTERISTICS' | SYMBOL CHARACTERISTICS TEST CONDITIONS MIN, TYP. MAX. UNITS | Pout Power Output 250 Watts Pin Power Input {<960-1218 MHz 60 Watts Pg Power Gain Voce50 Volts 7.0 dB Ne Collector Efficiency Pulse Width= 20 psec 40 % VSWR Load Mismatch Tolerance Duty Factor = 5% 5:1 BVebo Breakdown Voltage Ice OA, le= 20mA Volts (Emitter to Base) c= OA, le= 20m 4.0 BVces Breakdown Voltage Vbe= 0A, Ic=x 25mA Volts (Collector to Emitter) A, m Ly n FE DC-Current Gain Vee= SV, Ic= 1A 10 Note 1: Tc = +25C unless otherwise specified THERMAL RESISTANCE SERIES INPUT IMPEDANCE VS PULSE WIDTH Vec= Pin= 60 Watts Pk Df= 5% THERMAL RESISTANCE (C/W) SERIES INPUT IMPEDANCE (OHMS) 0 10 20 30 40 50 PULSE WIDTH ( psec ) VS FREQUENCY (TYPICAL) Vec= 50 Volts PO= 250 Watts Pk Pw= 20 psec Dix 5% 950 1000 1050 1100 11501200 FREQUENCY (MHz) SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICEZcl= R-jX (OHMS) SERIES LOAD IMPEDANCE VS FREQUENCY (TYPICAL) - Vec= 50 Volts PO= 250 Watts Pk Pw= 20 sec Df= 5% <r iX> 950 1000 1050 1100 11501200 FREQUENCY (MHz) 960-1215 MHz BROADBAND TEST AMPLIFIER I PCB-.020 TFE, 2 OZ, TYPE GT 1,2-82pt CHIP 122) .36 465.125 55 5S 225225 495.215, Ga g0 MED